PUBLICATIONS

1999

1999 Contract Review Presentation Viewgraphs (PDF:3.38MB/180 pages)

1998

1998 Interim Progress Report (PDF:2.76MB/59 pages)

P.P. Khargonekar, "Estimation and Control for Plasma Processes", Presentation at the DARPA/NSF Crosscutting Workshop on Virtual Integrated Prototyping (PDF:439KB/46pages).

O.D. Patterson, "Methodology for Selecting Process Variables for Feedback Control with Application to Reactive Ion Etching", the University of Michigan EECS Department PhD Defense Presentation (PDF:135KB/56pages).

O.D. Patterson, "Methodology for Selecting Process Variables for Feedback Control with Application to Reactive Ion Etching", the University of Michigan EECS Department PhD Dissertation (PDF:1.7MB/170pages) and Abstract (PDF:5KB/1pages).

W. Kong, H.T. Huang, M.E. Lee, C. Galarza, W. Sun, F.L. Terry, Jr., "Analysis of Time-Evolved Spectroscopic Ellipsometry Data from Patterned Structures for Etching process Monitoring and Control", SRC Techcon, Sept. 1998.

1997 and BEFORE

1997 Interim Progress Report

Refereed Journal Publications

1. R. W. Smith and D. J. Srolovitz, "Void Formation During Thin Film Growth: A Molecular Dynamics Study," Journal of Applied Physics, vol. 79, 1448-1457 1996.

 

2. M. H. Hansen, V. N. Nair, and D. J. Friedman, "Monitoring Wafer Map Data from Integrated Circuit Fabrication Processes for Spatially Clustered Defects," Technometrics, pp. 241-253, 1997.

 

3. D. J. Friedman, M. H. Hansen, V. N. Nair, and D. James, "Model-Free Estimation of Defect Clustering in Integrated Circuit Fabrication," IEEE Transactions of Semiconductor Manufacturing, vol. 10, August 1997.

 

4. A. Miller and C. F. J. Wu, "Parameter Design for Signal-Response Systems: A Different Look at Taguchi's Dynamic Parameter Design," Statistical Science, pp. 122-136, 1996.

 

5. T. L. Vincent, P. P. Khargonekar, F. L. Terry, Jr., "An Extended Kalman Filtering based method for Processing Reflectometry Data for Fast In-Situ Etch Rate Measurements," IEEE Transactions on Semiconductor Manufacturing, vol. 10, pp. 42-51, 1997.

 

6. M. Hankinson, T. L. Vincent, K. Irani, and P. P. Khargonekar, "Integrated Real-Time and Run-to-Run Control of Etch Depth in Reactive Ion Etching," IEEE Transactions on Semiconductor Manufacturing, vol. 10, pp. 121-130, 1997.

 

7. T. L. Vincent, P. P. Khargonekar, and F. L. Terry, Jr., "End Point and Etch Rate Control using Dual Wavelength Reflectometry with a Nonlinear Estimator," J. Electrochemical Society, pp. 2467-2472, 1997.

 

8. M. Hankinson, T. L. Vincent, K. Irani, and P. P. Khargonekar, "Combined Real-Time and Run-to-Run Control of Etch Depth and Uniformity in Reactive Ion Etching," J. Electrochemical Society, pp. 2473-2479, 1997.

 

9. O. Patterson and P. P. Khargonekar, "Reduction in Loading Effect in Reactive Ion Etching using Real-Time Closed Loop Control," J. Electrochemical Society, pp. 2865-2871, 1997.

 

10. F. Ying, R. W. Smith and D. J. Srolovitz, "Texture Formation by Preferential Sputtering and Shadowing during Film Growth," Appl. Phys. Letters, vol. 61, pp. 3007-3009, 1996.

 

11. L. Dong, R. W. Smith and D. J. Srolovitz, "A Two Dimensional Molecular Dynamics Simulation of Thin Film Growth by Oblique Deposition," J. Appl. Phys., vol. 80, pp. 5682-5690 , 1996.

 

12. S. Rauf and M. J. Kushner, "A Model for Non-Collisional Heating in Inductively Coupled Plasma Processing Sources," J. Appl. Phys., vol. 81, 5966 (1997)

13. S. Rauf and M. J. Kushner, "A Self Consistent Analytical Model for Non-Collisional Heating in Low Pressure Plasmas," accepted for publication in Plasma Sources Science and Technology.

14. S. Rauf and M. J. Kushner, "Argon Metastable Densities in Radio Frequency Ar, Ar/O2 and Ar/CF4 Electrical Discharges," J. Appl. Phys., vol. 82, p. 8295, 1997.

15. C. Garvin, B. E. Gilchrist, D. S. Grimard and J. W. Grizzle, "Measurement and Error Evaluation of Electrical Parameters at Plasma Relevant Frequencies and Impedances," accepted for publication in J. Vac. Sci. Technol. A, 1997.

 

Refereed Journal Papers under Review

 

16. L. Dong, J. Schnitker, R. W. Smith and D. J. Srolovitz, "Stress Relaxation and Misfit Dislocation in Heteroepitaxial Film Growth: A Molecular Dynamics Simulation Study," submitted to J. Applied Physics.

 

17. F. Tsung, H. Wu and V. N. Nair, "Efficiency and Robustness of Discrete PI Control Schemes," submitted to Technometrics, 1996

 

18. W. Li and C. F. J. Wu, "An Integrated Method of Parameter Design and Tolerance Design," submitted to Quality Engineering, 1996

 

19. F. Tsung, J. Shi, and C. F. J. Wu, "Joint Monitoring of PID Controlled Processes," submitted to J. of Quality Technology.

 

20. T. Vincent and P. P. Khargonekar, "A Nonlinear Estimation Problem Arising from Drifitng Sensor Gains," submitted for publication to the IEEE Transactions on Automatic Control.

 

21. S. Rauf and M. J. Kushner, "Virtual Plasma Equipment Model: A Tool for Investigating Feedback Control in Plasma Processing Equipment," submitted to IEEE Trans. Semiconductor Manufacturing.

 

Papers Presented at Refereed Conferences

 

22.. R. W. Smith, F. Ying, and D. J. Srolovitz, "Growth And Texture Of Polycrystalline Thin Films," Materials Research Society Symposium, 1995

 

23. M. Hankinson, T. Vincent, K. Irani, and P. P. Khargonekar, "Combined Real-Time and Run-to-Run Control of Etch Depth in Reactive Ion Etching," Proc. SEMATECH AEC/APC Workshop VII, pp. 249-269, November 1995.

 

24. T. L. Vincent, P. P. Khargonekar, and F. L. Terry, Jr. "A Real-Time Etch Rate Estimation Algorithm for Single/Multiple Wavelength Reflectometry," Proc. SEMATECH AEC/APC Workshop VII, pp. 347-366,} November 1995.

 

25. T. L. Vincent, P. P. Khargonekar, and F. L. Terry, Jr. "An extended Kalman filter method for fast in-situ etch rate measurements," in Diagnostic Techniques for Semiconductor Materials Processing II, (eds. S. W. Pang, et al. ), MRS Symposium held November 27-30, 1995 Boston, MA, pp. 87-94, Materials Research Society, Pittsburgh, PA, 1996

 

26. T. Li, C.-Y. Chen, C. T. malone, and J. Kanicki, "High-Rate Deposited Amorphous Silicon Nitride for the Hydrogenated Amorphous Silicon Nitride Thin-Film Transistor Structures," Proc. 1996 Spring MRS Symposium.

 

27. G. S. Was, D. J. Srolovitz, Z. Ma and L. Dong, "Microstructure Control for Thin Film Metallization," Proc. Mater. Res. Soc., Materials Research Society, Pittsburgh, vol 441, 1997.

 

28. S. Ruegsegger, B. Rashap, J. Freudenberg, "Improved Fluorine Actinometry in a CF4/Ar Plasma by Estimating Argon Dilution," Proc. Electrochemical Society's 191st Meeting Symposium on Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing II, May 1997, Montreal.

 

29. T. L. Vincent, P. P. Khargonekar and F. L. Terry, Jr., "Real time estimation and feedback control of etch rate and etch depth using nonlinear filtering techniques," Abstracts volume for 190th Electrochemical Society Meeting, p. 375, October 6-11, 1996, San Antonio, TX.

 

30. O. D. Patterson, P. P. Khargonekar, "Reduction in Loading Effect Using Real Time Closed Loop Control of Reactive Ion Etching," Abstracts volume for 190th Electrochemical Society Meeting, p. 374, October 6-11, 1996, San Antonio, TX.

 

31. M. Hankinson, T. L. Vincent, K. Irani, and P. P. Khargonekar, "Combined Real-Time and Run-to-Run Control of Etch Depth and Uniformity in Reactive Ion Etching," Abstracts volume for 190th Electrochemical Society Meeting, p. 1173, October 6-11, 1996, San Antonio, TX.

 

32. T. Li, C.-Y. Chen, C. T. Malone, and J. Kanicki, "Electrical Instability in High-Rate Deposited Hydrogenated Amorphous Silicon Thin Films," presented at Materials Research Society Fall Meeting, December 2-6, 1996, Boston, MA.

 

33. O. D. Patterson, P. P. Khargonekar, X. Dong, V. N. Nair, "Empirical Modelling of Reactive Ion Etching for Reduction of Variance Via Robust Design, Real-time Feedback and Run-To-run Control," Proc. Electrochemical Society's 191st Meeting Symposium on Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing II, May 1997, Montreal.

 

34 C. G. Galarza, P. P. Khargonekar, N. Layadi, T. L. Vincent, E. A. Rietman, and J. T. C. Lee, "A New Algorithm for Real-Time Thin Film Thickness Estimation in in-situ Muti-Wavelength Ellipsometry using an Extended Kalman Filter," International Conference on Spectroscopic Ellipsometry, Charleston SC, May 1997.

 

35. P. Klimecky, "Real-Time Feedback Control of Plasma Etching Chambers Using LabVIEW," NI User Solution Article # 360982A-01, Presented at NIWeek Conference, 1997.

 

36. M. J. Kushner, M. J. Grapperhaus, R. J. Hoekstra and S. Rauf, "One Approach to Resolving Reactor to Sub-Micron Scales in Simulation of Plasma Etching for Microelectronics Fabrication," Conference on Multiscale Phenomena in Science and Engineering, Baton Rouge, LA, February 1997.

 

37. S. Rauf, M. J. Grapperhaus, R. J. Hoekstra and M. J. Kushner, "Simulation Tools for the Design and Analysis of Plasma Processing Equipment," International Conference on Plasma Science, San Diego, CA, May 1997.

 

38. S. Rauf and M. J. Kushner, "Numerical Investigation of Feedback Control in Plasma Processing Reactors," 191st Meeting of the Electrochemical Society, Montreal, Quebec, Canada, May 1997.

 

39. S. Rauf and M. J. Kushner, "Argon Metastable Densities in the GEC Reference Cell: A Numerical Study," International Conference on Plasma Science, Boston, MA, June 1996.

40. S. Rauf and M. J. Kushner, "Non-Collisional Heating in Inductively Coupled Plasma Sources," International Conference on Plasma Science, Boston, MA, June 1996.

 

41. S. Rauf and M. J. Kushner, "Simulation of Ar/CF4 and Ar/O2Plasmas in the GEC Reference Cell ," 49th Gaseous Electronics Conference, Argonne, IL, Oct. 1996. (Bulletin of the Am. Phys. Soc. vol. 41, p. 1295, 1996)

 

42. S. Rauf and M. J. Kushner, "A Comparative Study of Models for Non-Collisional Heating in Inductively Coupled Plasmas," 49th Gaseous Electronics Conference, Argonne, IL, Oct. 1996 (Bulletin of the Am. Phys. Soc. vol. 41, p. 1325, 1996.

 

43. S. Rauf and M. J. Kushner, "Ion and Neutral Temperatures in Inductively Coupled Plasma Etching Reactors," 43rd Annual Symposium of the American Vacuum Society, Philadelphia, October 1996.

 

44. T. L. Vincent, P. I. Klimecky, W. Sun, P. P. Khargonekar and F. L. Terry, Jr., "A Highly Accurate Endpoint Method for a TFT Back Channel Recess Etch," Society for Information Display Conference, September 1997.

 

Papers Accepted for Conference Presentation

 

45. G. S. Was, D. J. Srolovitz, Z. Ma and L. Dong, "Microstructure Control for Hillock Suppression in Thin Film Metallization," Society for Information Display Conference, September 22-23. 1997.

 

46. Z. Ma and G. S. Was, "Elimination of Hillocks on Aluminum Metallization by Ion Beam Assisted Deposition," Materials Research Society, Fall 1997 Meeting, Boston, December, 1997.

 

47. S. Rauf and M. J. Kushner, "A General Circuit Model for rf Plasma Processing Equipment," 50th Gaseous Electronics Conference, Madison, WI, October 1997 (Bull. Am. Phys. Soc. vol. 42, 1768 (1997))

48. S. Rauf and M. J. Kushner, "Feedback Control of Inductively Coupled Plasma Reactors," 44th National Symposium of the American Vacuum Society, San Jose, October 1997.