Advance Program

The 1998 Topical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) will be held at Shonan Village Center, Hayama-machi, Kanagawa, Japan from August 30 to September 2, 1998. Following the tradition established by the previous Topical Workshops on Heterostructure Microelectronics, TWHM-ISA '98 will bring together an international group of engineers and scientists in the emerging field of heterostructure microelectronics which has broad applications in the areas of a variety of information systems.

This year's workshop will focus on HBT and HEMT technologies based upon a range of heterostructure material systems including III-Vs (e.g. GaAs, InP, etc.) group IV (e.g. SiGe), and wide bandgap semiconductors (e.g. GaN and SiC). Papers have been collected in areas of heterostructure materials and device development, circuit demonstration, as well as the application of heterostructure microelectronic technologies to wireless, global grid communications and signal/data processing systems. In keeping with the informal character of the workshop, TWHM-ISA '98 is scheduled in a way that there will be no parallel sessions.

TWHM-ISA '98 will complement the1998 International Conference on Solid State Devices and Materials (SSDM), which will be held in Japan from September 7 to 10, 1998, by allowing detailed deliberations focused on applications of heterostructure microelectronics.

Front Cover Illustration: A work of Hokusai Katsushika "Soshu-Shichirigahama" Through the courtesy of THE ADACHI FOUNDATION FOR THE PRESERVATION OF WOODCUT PRINTING

GENERAL INFORMATION

Date and Location

The 1998 Topical Workshop on Heterostructure Microeletronics (TWHM-ISA '98) will be held at the Shonan Village Center, Hayama-machi, Kanagawa, Japan from August 30 to September 2, 1998. For more information, visit the center's home page at URL: http://www.shonan-inet.or.jp/~svc/index.htm

Access to SHONAN VILLAGE CENTER

From New Tokyo International Airport (Narita)

Please take JR (Japan Railway) lines from Narita Airport to Zushi (2 and 1/2 hours), via Tokyo and Yokohama (through Narita and Yokosuka lines). The fare from the airport to Zushi Station is ¥2,210. In case you catch the JR NEX (Narita Express; recommended) from Narita Airport station, additional charge (¥2,290) for seat reservation is required. You need to change your carriage at Yokohama Station or O-funa station. At Zushi station, take a local bus for "Shonan Village Center" or "Shonan Village Bus Terminal" (Route No.16) at the No.1 bus stop, then get off at the Shonan Village Center bus stop. Bus time table is available at URL: http://www.shonan-inet.or.jp/~svc/Access/E82bus.time.table.html Taxis from Zushi station are also available. If you were in trouble, call Shonan Village Center (Phone: 0468 (55) 1800).

From Haneda Airport

It's convenient to take a bus from the airport to Yokohama and then change to JR Yokosuka line bound for Yokosuka or Kurihama. It takes one hour from Yokohama to Zushi. Yokohama Station is in 6-8 minutes walk from Yokohama bus terminal. Other routes are not recommended because lines should be changed several times.

Workshop Registration and Hotel Accommodations

The registration fee is ¥30,000 before July 30, 1998 and ¥35,000 after July 31, 1998. The registration fee includes conference facilities, an extended abstract, coffee breaks, lunches during the conference, an excursion, a reception on Aug. 30, and a dinner cruise on Sept. 1. The registration fee for accompanying persons is ¥7,000 each. The fee includes lunch on Sept.1, the excursion, reception and dinner cruise.

The accommodation fee for a participant (single room) is ¥40,000. This fee includes breakfasts during the Workshop and dinner on Aug. 31. A twin room shared by two participants is ¥35,000. Please give the name of your intended roommate on the accommodation form, if any. A participant sharing a twin room with a non-participating partner will be charged ¥70,000 in total.

For registration and accommodations, please fill out enclosed TWHM-ISA '98 REGISTRATION and ACCOMMODATION FORM and return by fax or mail by July 30 to Financial Administrator TWHM-ISA '98

Prof. Yasuyuki Miyamoto,
Dept. of E&EE, Tokyo Inst. of Tech.
2-12-1 O-okayama, Meguro-ku Tokyo,
152-8552 Japan
Fax: +81 (3) 5734-2907,
Phone: +81 (3) 5734-2572

If you need special arrangements, such as partial attendance due to unavoidable circumstances etc., more than one accompanying person, or accommodation before and after the workshop at Shonan Village Center, please contact the Workshop Financial Administrator.

Registration Time:

8/30(Sun) 4:00 PM- 8:00 PM Front Lobby
8/31(Mon) 8:00AM -17:00 PM Auditorium Foyer
9/1 (Tue) 8:00AM -12:30 PM Auditorium Foyer
9/2 (Wed) 8:00AM -12:30 PM Auditorium Foyer

Checkin and Checkout

Check in and pick up room keys at the registration desk. Check out at the Reception Desk at the center. Checkout time is 10:00 AM. Please pay miscellaneous expenses (e.g. telephone fee, etc., ) when you check out.

Refund Policy

In case of cancellation, a fee of ¥2,000 will be deducted form the refund. Cancellation should be made in writing to the Workshop Financial Administrator, Prof. Y. Miyamoto. No refunds will be made for cancellation after August 21, 1998. Extended abstracts will be mailed after the conference to those registrants who could not attend the meeting.

Dining Information

The Shonan Village Center is designed for seminars and small workshops. Restaurants and accommodations are available by reservation only, basically. There is only one coffee shop within walking distance from the center. Staying at Shonan Village Center is strongly recommended.

Social Events

A Welcome Reception will be held on August 30, Sunday, from 6:30 in the evening. An Excursion is planned on September 1, Tuesday, from 2:00 in the afternoon followed by a workshop dinner in the evening on a Sagaminada Bay Cruise.

Technical Sessions

The program includes invited and contributed papers. The authors of contributed papers are requested to give short oral and poster presentations.

Presentation Form and Time:

Invited Paper: 20 minutes for talk and 5 minutes for Q&A
Contributed Paper: short oral presentation for 5 minutes and poster presentation (11:05-12:30, September 1)
Poster size: (H) 60 cm x (W) 120 cm

Audio/Visual Equipment:

An overhead projector, 35 mm slide projector, microphone and pointer will be available. If you plan to use a 35 mm slides, please come to the Workshop Committee Room at least one day prior to your presentation or during the welcome reception.

The Workshop Proceedings

After the workshop, the proceedings of TWHM-ISA '98 will be published in a special issue of Solid State Electronics. Authors of all the invited and contributed papers are asked to submit three copies of the proceedings manuscript on the first day of the workshop.

Technical Sessions Monday, August 31

OPENING REMARKS (9:00-9:20)

D. Pavlidis, The University of Michigan, Ann Arbor, MI, USA

T. Ishibashi, NTT System Electronics Labs., Atsugi, Japan

K. White, AFOSR/AOARD, Tokyo, Japan

SESSION 1 HIGH-SPEED & HIGH-FREQUENCY DEVICES (9:20-10:50)

9:20 S1-1 Compound Semiconductor Devices for Future Data Transmission Systems (Invited), M. Takigawa Fujitsu Laboratories Ltd., Atsugi, Japan

9:45 S1-2 Correlation Between Gate Lag, Power Drift and Power Slump of Digitally Modulated RF Power PHEMTs for Wireless Communication Applications (Invited) J. C. M. Hwang Lehigh University, Bethlehem, PA, USA

10:10 S1-3 Novel HEMT Processing Technologies and Their Circuit Applications (Invited) I. Adesida, A. Mahajan and G. Cueva University of Illinois, Urbana, IL, USA

10:35 S1-4 Suppression of GDS Frequency Dispersions in Heterojunction FETs with a Partially Depleted p-Type Buffer Layer Y. Ohno, S. Ohkubo, K. Kasahara, K. Kunihiro and Y. Takahashi NEC Co., Tsukuba, Japan

10:40 S1-5 A New Method for Evaluation of Surface Recombination in Heterojunction Bipolar Transistors by Magnetotransport T. Nozu, T. Sugiyama, S. Hongo, K. Tsuda and K. Morizuka Toshiba Co., Kawasaki , Japan

10:45 S1-6 Effects of Surface States on Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs K. Horio and N. Kurosawa Shibaura Institute of Technology, Omiya, Japan

(Coffee Break)

SESSION 2 NOVEL DEVICES (11:10-12:40)

11:10 S2-1 Resonant-Tunneling Analog/Mixed-Signal Circuit Technology (Invited) A. Seabaugh, B. Brar, T. Broekaert, F. Morris and G. Frazier Raytheon Systems Company, Dallas, TX, USA

11:35 S2-2 Influence of RTD Device Physics on Circuit Performance (Invited) J. N. Schulman HRL Labs., Malibu, CA, USA

12:00 S2-3 SiGe HBTs for Mobile Communication (Invited) A. Schüppen TEMIC Semiconductor GmbH, Heilbronn, Germany

12:25 S2-4 n- and p-Type SiGe HFETs and Circuits U. König¹, G. Höck¹, T. Hackbarth¹, M. Glück¹, M. Zeuner¹ , T. Ostermann² and M. Saxarra³
¹ Daimler-Benz Research Center, Ulm, Germany
²University Linz, Linz, Austria
³Ruhr-University, Bochum, Germany

12:30 S2-5 Process Design for SiGe-HBTs Prepared Using Cold-Wall UHV/CVD F. Sato, T. Hashimoto, T. Tatsumi and T. Tashiro NEC Co., Sagamihara, Japan

12:35 S2-6 GaInAs/AlAs/InP Resonant Tunneling Diodes by MOVPE Y. Miyamoto, H. Tobita, K. Oshima and K. Furuya Tokyo Institute of Technology, Tokyo, Japan

(Lunch)

SESSION 3 MICROWAVE/MILLIMETER WAVE DEVICES (14:00-15:20)

14:00 S3-1 Advanced Heterostructure Transistor Technologies for Wireless Communications (Invited) N. L. Wang EiC Co., Fremont, CA, USA

14:25 S3-2 A Novel GaAs Flip-Chip Power FET with High Gain and Efficiency (Invited) T. Tanaka, H. Furukawa, H. Nagata and D. Ueda Matsushita Electronics Co., Osaka, Japan

14:50 S3-3 A Low Power Dissipation 0.4~0.7 GHz Transimpedance Amplifier IC for SCM Optical Communication System K. Fujimoto, H. Masato, K. Kawashima, M. Nishitsuji, M. Tanaka*, Y. Kudo** and O. Ishikawa Matsushita Electronics Co., Osaka, Japan
*Matsushita Communication Kanazawa R&D Labs. Co., Ltd., Kanazawa, Japan
**Matsushita Communication Ind. Co., Ltd., Osaka, Japan

14:55 S3-4 44% Efficiency Power Heterojunction FET Operated at 3.5 V for 1.95 GHz Wide-Band CDMA Cellular Phones T. B. Nishimura, N. Iwata, M. Tomita and Y. Bito NEC Co., Shiga, Japan

15:00 S3-5 Reliability Investigation of Heavily C-doped InGaP/GaAs HBTs Operated under a Very High Current-Density Condition K. Mochizuki, T. Oka and T. Tanoue Hitachi Ltd., Kokubunji, Japan

15:05 S3-6 Comparison of Conventional and Thermally-Stable Cascode (TSC) AlGaAs/GaAs HBTs for Microwave Power Applications S. S. H. Hsu*, B. Bayraktaroglu^� and D. Pavlidis* *The Univ. of Michigan, Ann Arbor, MI, USA ^�Northrop Grumman Co., Baltimore, MD, USA

15:10 S3-7 InGaP HBT Technology for RF and Microwave Instrumentation T. Low, T. Shirley, C. Hutchinson, G. Essilfie, W. Whiteley, B. Yeats and D. D'Avanzo Hewlett-Packard Co., Santa Rosa, CA, USA

15:15 S3-8 Passivation of InP-based HBTs R. Driad, S. Laframboise, S. P. McAlister and W. R. McKinnon National Rsearch Council of Canada, Ottawa, Canada

(Coffee Break)

SESSION 4 WIDE BANDGAP DEVICES (15:40-17:40)

15:40 S4-1 GaN-based Electronic Devices (Invited) M. S. Shur and R. Gaska* Rensselaer Polytechnic Institute, Troy, NY, USA *APA Optics, Inc., Blaine, MN, USA

16:05 S4-2 Lateral Epitaxial Overgrowth (LEO) for Low Defect Density GaN on Sapphire (Invited) S. P. DenBaars, H. Marchand, J. P. Ibbetson, P. T. Fini, S. Chichibu,

S. J. Rosner¹, S. Keller, J. S. Speck and U. K. Mishra Univ. of California, Santa Barbara, CA, USA ¹Hewlett-Packard Labs., Palo Alto, USA

16:30 S4-3 SiC and GaN Wide Bandgap Semiconductor Materials and Devices (Invited) A. A. Burk, Jr.¹, M. J. O'Loughlin¹, R. R. Siergiej² , A. K. Agarwal², S. Sriram² , R. C. Clarke², M. F. MacMillan², V. Balakrishna² and C. D. Brandt^{2

1} Northrop Grumman ESSD Advanced Technology Laboratory, Baltimore, MD, USA
²Northrop Grumman ESSD Science and Technology Center, Pittsburgh, PA, USA

16:55 S4-4 Diamond Field Effect Transistors using Hydrogen-terminated Surface (Invited) H. Kawarada Waseda University, Tokyo, Japan

17:20 S4-5 GaN Microwave HEMTs Y.-F. Wu*, B. J. Thibeault*, B. P. Keller*, S. Keller**, S. P. Denbaars** and U. K. Mishra**
* WiTech, Goleta, CA, USA
**University of California, Santa Barbara, CA, USA

17:25 S4-6 GaN MODFET Microwave Power Technology for Future Generation Radar and Communications Systems
D. E. Grider, N. X. Nguyen and C. Nguyen HRL Labs., Malibu, CA, USA

17:30 S4-7 Progress Towards Ultra-Wideband AlGaN/GaN MMICs J. C. Zolper Office of Naval Research, Arlington, VA, USA

17:35 S4-8 Optimization of Schottky Gate Formation Process for n-Channel GaN MESFETs Y. Koyama, T. Hashizume and H. Hasegawa Hokkaido University, Sapporo, Japan

Technical Sessions Tuesday, September 1

SESSION 5 CIRCUIT APPLICATIONS, DEVICE FABRICATION AND CHARACTERIZATION (9:00-10:45)

9:00 S5-1 Novel Bipolar Technologies and Their Circuit Applications (Invited) M. Rodwell, Q. Lee, D. Mensa, J. Guthrie, S. C. Martin*, R. P. Smith*, R. Pullela, B. Agarwal, S. Jaganathan, T. Mathew and S. Long University of California, Santa Barbara , CA, USA
* Jet Propulsion Labs., Caltech, Pasadena, CA, USA

9:25 S5-2 SiGe Heterostructure CMOS Circuits and Applications (Invited) E. H. C. Parker and T. E. Whall University of Warwick, Conventry, UK

9:50 S5-3 Power Amplification using NPN and PNP InP HBTs and Application to Push-Pull Circuits D. Sawdai, D. Pavlidis and S. Mohammadi Univ. of Michigan, Ann Arbor, MI, USA

9:55 S5-4 Simulation of the Microwave Performance of SiGe HBTs and Its Amplifiers L. X. Zhao and G. D. Shen Beijing Polytechnic University, Beijing, China

10:00 S5-5 77K Analog Monolithic HEMT Amplifier for High-Speed Josephson-Semiconductor Interface Circuit N. Harada, Y. Awano, K. Hikosaka and N. Yokoyama Fujitsu Ltd., Atsugi, Japan

10:05 S5-6 Improvement of 0.1 µm-Gate InGaAs/AlGaAs HEMT Performance by Suppression of Electro-Chemical Etching in Deionized Water T. Ohshima, R. Shigemasa, M. Sato, M. Tsunotani and T. Kimura Oki Electric Industry Co., Ltd., Hachioji, Japan

10:10 S5-7 Electrochemical Formation of Asymmetry in Gate-recess Grooves for InAlAs/InGaAs MODFETs with Short Gate-lengths D. Xu, T. Enoki, T. Suemitsu, Y. Umeda, H. Yokoyama and Y. Ishii NTT System Electronics Labs., Atsugi, Japan

10:15 S5-8 Demonstration of Low Temperature Grown InP-Channel HFET Transferred onto GaAs Substrate M. Kunze, L. H. Lee, H. Y. Chung and E. Kohn University of Ulm, Ulm, Germany

10:20 S5-9 Growth of Device Quality InGaP/GaAs Heterostructure by GSMBE using TBP H. Sai, H. Fujikura, A. Hirama and H. Hasegawa Hokkaido University, Sapporo, Japan

10:25 S5-9 Potential Profile Measurement of GaAs MESFETs Passivated with Low-Temperature Grown GaAs Layer by Kelvin Probe Force Microscopy K. Matsunami, T. Usunami, S. Kishimoto, K. Maezawa, T. Mizutani, P. Schmid* and K. M. Lipka* Nagoya University, Nagoya, Japan
* University of Ulm, Ulm, Germany

10:30 S5-9 Photoelectric Response of Heterostructure Transistors F. Schuermeyer Air Force Research Lab., Wright Patterson AFB, OH, USA

10:35 S5-9 In-situ Characterization Technique of Compound Semiconductor Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement H. Takahashi, T. Yoshida, M. Mutoh, T. Hashizume, T. Sakai* and H. Hasegawa Hokkaido University, Sapporo, Japan
* Dianippon Screen Manufacturing Co., Ltd., Kyoto, Japan

10:40 S5-9 A Preliminary Study of MIS Diodes with nm-Thin GaAs Oxide Layers S. Takamiya, T. Sugimura, T. Tsuzuku, T. Inokuma, S. Hashimoto and K. Iiyama Kanazawa University, Kanazawa, Japan

(Coffee Break)

SESSION 6 POSTER VIEWING (11:05-12:30)

Technical Sessions Wednesday, September 2

SESSION 7 SYSTEMS APPLICATIONS (9:00-10:40)

9:00 S7-1 Applications of HEMT Devices in Space Communication Systems and Equipment: A European Perspective (Invited) M. C. Comparini Alenia Aerospazio-Space Division, Roma, Italy

9:25 S7-2 RF Device Trends for Mobile Communications (Invited) M. Muraguchi NTT Wireless Communications Labs., Yokosuka, Japan

9:50 S7-3 MM-Wave Integrated Circuits and Their Applications to Communication and Automotive Systems (Invited) P. Quentin, C. Dourlens and D. Pons United Monolithic Semiconductors, Orsay, France

10:15 S7-4 MM-wave HEMT based Circuits and Their System Applications (Invited) J. Dickmann Daimler-Benz AG, Research Center, Ulm, Germany

(Coffee Break)

SESSION 8 HIGH-SPEED ICS FOR OPTICAL COMMUNICATION SYSTEMS (11:00-12:40)

11:00 S8-1 Technologies for Making Full Use of High-Speed ICs (Invited) K. Emura NEC Co., Kawasaki, Japan

11:25 S8-2 SiGe HBTs and Circuits for Optical Fiber Communication Systems (Invited) K. Washio Hitachi Ltd., Kokubunji, Japan

11:50 S8-3 Heterostructure Circuit Applications in Optical Communications (Invited) L. Lunardi AT&T Labs., Red Bank, NJ, USA

12:15 S8-4 Heterostructure-based High-Speed/High-Frequency Electronic Circuit Applications (Invited) P. J. Zampardi, K. Runge, R. L. Pierson, J. A. Higgins, R. Yuand B. T. McDermott Rockwell Science Center, Thousand Oaks, CA, USA

SESSION 9 MANUFACTURING (14:00-14:50)

14:00 S9-1 A 0.1µm MHEMT Millimeter-Wave IC Technology Designed for Manufacturability (Invited) H. Rohdin, A. Wakita, A. Nagy, V. Robbins, N. Moll and C. Su Hewlett-Packard Labs., Palo Alto, CA, USA

14:25 S9-3 Wafer Bonding Technology for Optoelectronic Integrated Devices (Invited) H. Wada Oki Electric Industry Co. Ltd., Hachiouji, Japan

CLOSING REMARKS (14:50-15:05)

T. Mizutani Nagoya Univ., Nagoya, Japan

B. Bayraktaroglu Northrop Grumman Co., Baltimore, MD, USA

TWHM-ISA '98 COMMITTEE MEMBERS

Workshop Co-Chairs: D. Pavlidis (Univ. of Michigan)

T. Ishibashi (NTT)

Technical Program Co-Chairs: T. Mizutani (Nagoya Univ.)

B. Bayraktaroglu (Northrop Grumman)

Financial Administrator & Local Arrangements: Y. Miyamoto (Tokyo Inst. Tech.)

Secretary: C. Nguyen (Hughes Labs.)

Sponsor Coordination: S. Fujishiro (AFOSR/AOARD)

K. White (AFOSR/AOARD)

Committee members: D. D'Avanzo (Hewlett-Packard)

T. Enoki (NTT)

H. Hasegawa (Hokkaido Univ.)

K. Hirakawa (Univ. of Tokyo)

U. König (Daimler-Benz)

K. Matsumoto (ETL)

S. Matsushita (Sanyo Electric)

U. Mishra (UCSB)

Y. Mitsui (Mitsubishi)

K. Mizuno (Tohoku Univ.)

K. Morizuka (Toshiba)

T. Nakamura (Hosei Univ.)

S. Nishi (Oki Electric)

T. Nozaki (NEC)

H. Sato (Sharp)

F. Schuermeyer (Wright Labs.)

S. Takamiya (Kanazawa Univ.)

H. Tokuda (Toshiba)

D. Ueda (Matsushita)

N. Yokoyama (Fujitsu)

J. Zolper (ONR)

Sponsors and Cooperations

Air Force Office of Scientific Research

Asian Office of Aerospace R&D (Sponsor)

IEEE Electron Device Society (Technical Sponsor)

The Japan Society of Applied Physics (Cooperation)

The Institute of Electronics, Information and Communication Engineers (Cooperation)

TWHM-ISA '98 COMMITTEE Organizing Committee Chair Address

US Workshop Co-Chair

Prof. Dimitris Pavlidis
The University of Michigan
Department of Electrical Engineering and Computer Science
2307 EECS Building
1301 Beal Avenue
Ann Arbor, MI 48109-2122 USA
Phone: +1 (734) 647-1778
Fax: +1 (734) 763-9324
e-mail: pavlidis@umich.edu
URL: www.eecs.umich.edu/dp-group/

Japanese Workshop Co-Chair

Dr. Tadao Ishibashi
NTT System Electronics Laboratories
Advance Devices and Technology Laboratory
3-1, Morinosato Wakamiya, Atsugi-shi
Kanagawa, 243-0189, Japan
Phone: +81 (462) 40-2888
Fax: +81 (462) 40-4306
e-mail: ishi@aecl.ntt.co.jp

Financial Administrator & Local Arrangements

Prof. Yasuyuki Miyamoto
Tokyo Institute of Technology
Department of Electrical and Electronic Engineering
2-12-1 O-okayama, Meguro-ku Tokyo,
152-8552 Japan
Phone: +81 (3) 5734-2572
Fax:+81 (3) 5734-2907
e-mail: miya@pe.titech.ac.jp

TWHM-ISA URL

General information on TWHM-ISA '98 can be found in the following URL: www.eecs.umich.edu/TWHM-ISA98/