Instructor: Prof. Wei Lu
meeting time : MW 9:00-10:30am
location : 3427 EECS

Course descreption:

      This is a graduate level course aimed to provide students a comprehensive understanding on nanoelectronics, and covers both novel MOSFET device structures and emerging research device structures based on the bottom-up paradigm.

      We plan to fill the gap between the fast pacing research in nanotechnology and the current graduate curricula which focus on conventional CMOS devices. We will begin by first performing an in-depth analysis of the device principles and factors that affect the performance of MOSFET, followed by discussions on the challenges and technological innovations (boosters) that are currently being developed to sustain the historical trend of transistor scaling. Following that, we will carry out a critical survey of emerging research devices that may drive technology beyond CMOS.

      Topics include transistor device principles and scaling rules, high-k dielectrics, mobility enhancement factors, SOI devices, ballistic and single-electron devices, nanowires and nanotubes, and molecule and spin based devices.

Prerequisite: EECS 421 or permission by instructor.

Syllabus (PDF)

Introduction

Textbooks:

Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning Cambridge University Press, 1st edition (October 13, 1998)
ISBN: 0521559596

Nanoelectronics and Information Technology by Rainer Waser
John Wiley & Sons 2 edition (April 22, 2005)
ISBN: 3527405429

Reference books:

Physics of Semiconductor Devices  By S. M. Sze and K. K. Ng
Wiley-Interscience (October 27, 2006), 3rd edition
ISBN: 0471143235

Physics of Semiconductor Devices by M. Shur
Prentice Hall (January 26, 1990)
ISBN: 0136664962

The Physics of Low-Dimensional Semiconductors by John H. Davies
Cambridge University Press (December 13, 1997)
ISBN: 052148491X

Grading:

Homework 60%
Term paper 35%
Participation 5%