III-V Semiconductors
Research Topics
Devices
Research and Development BAL
GaAs Monolithic Microwave Integrated Circuits
GaAs HEMT- HTS Resonator-based X-Band Oscillator made by a Hybrid and Integrated Technology
High-Speed Monolithic Integrated Photoreceiver
A.F.M. Anwar - Assoc. Professor - ESE Dept.
Cryogenic HEMTs
CircuitApps
Optoelectronic Materials and Interfaces Group, Research
Publications
Annual Review 1994
Modellierung von aktiven und passiven Hochfrequenzbauelementen für Anwendungen bis 60 GHz
Microwave Electronics Group
Master Course Students
phys. stat. sol. (a) 153, No.2 (February 1996); Devices
Siemens Semiconductor
techno
Highlights from the III-V Technology Group's Activities
Semicond. Sci. Technol., 9, pp1143-1147, 1994
High Bandwidth InP-HEMT Front-End Amplifier for a 20 Gbit/s Integrated InP-Photoreceiver
Compound Semiconductor Research Department, ETRI, Home Page
Satellite-TV quiz; A
Heterojunction Bipolar Transistors
- Microwave Power HBT Reliability
- InP- and GaAs-based HTBs at SSEL, University of Michigan
- UCSD High Speed Electronics group
- HBT-Berichte
- HEMTS & HBTS: Devices, Fabrication, and Circuits
- GaAs HBT
- ETRI HBTs
- BJT
- MRS Fall 1996
- TRW Inc.
- HBT Model Equations 1
- Heavily C-Doped (Al)GaAs
- Selectively Regrown AlGaAs
- RAD - Product information - HBT
- Microwave Power HBT Reliability
- Compound Semiconductor Research Department, ETRI, Home Page
- JOP Prototype: 8-Channel HBT. Laser Driver Array
- InP HBT process of MICHIGAN
- ETRI Korea
- Rockwell HBT
- Don Sawdai's Homepage
- MOST -- First Generation SCHBT
- HSCD Test Reticle Home Page
- Don Sawdai's HBT Gallery
- GaAs and InP-based Heterostructure Bipolar Transistors
- Microwave GaAs Home
- UCSD High Speed Devices Group Home Page
The homepages are maintained by Xin Zhu