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Program objectives:
The program goal is to develop solid-state THz sources using GaN NDR (Negative Differential Resistance) diode oscillators and micromachining. The use of wide bandgap GaN-based semiconductors with high electrical strength is expected to result in a increased operating frequency of Gunn-effect enabling, for the first time, THz signal generation using solid-state Gunn diode oscillators. The NDR devices can further be integrated using low-cost power combining networks and cavities operating at Terahertz frequencies. Silicon micromachining has been selected as the enabling technology, whereby waveguides will be integrated into silicon via MEMS (Micro Electro Mechanical Systems) technology. Such an architecture promises to achieve the low-loss performance of conventional waveguides, but in a batch fabrication procedure, thus dramatically reducing system cost.
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