EGOR ALEKSEEV

Egor Alekseev was born in 1970 in St. Petersburg, Russia. He graduated in 1992 from the Radiophysical Science & Engineering Faculty of St.-Petersburg State Technical University (aka Polytechnic Institute) with a degree of Engineer-Researcher-Scientist with specialization in materials and components of modern microelectronics. He conducted his undergraduate research in the Ioffe Physical Technical Institute in St. Petersburg. In 1994 he joined Solid-State Electronics Laboratory at the Electrical Engineering and Computer Science Department of the University of Michigan and received his M.S. and Ph.D. degrees in Electrical Engineering in 1995 and 2000, respectively. After his graduation Egor was employed as a Research Fellow at the Solid-State Electronics Laboratory. In 2001 he joined MCE companies.
URL: http://www.umich.edu/~yegor/
Email: yegor@ieee.org

Dr. Egor Alekseev participated in the following research programs:

List of publications:

  1. A. K. Panda, D. Pavlidis, and E. Alekseev,
    DC, High-Frequency and Noise Characteristics of GaN-based IMPATTs,
    to be published in IEEE Transactions on Microwave Theory and Techniques

  2. E. Alekseev, D. Pavlidis, N. X. Nguyen, C. Nguyen, and D. E. Grider,
    Power Performance and Scalability of AlGaN/GaN Power MODFETs,
    IEEE Transactions on Microwave Theory and Techniques, Vol. 48, n.10, pp 1694-1700, October 2000

  3. E. Alekseev, D. Pavlidis, T. Tsuchiya, and M. Kihara,
    Broadband AlGaN/GaN HEMT MMIC Attenuators with High Dynamic Range,
    2000 European Microwave Week, joined GAAS/EuMC session, Paris, France, October 2000

  4. T. Hashizume, E. Alekseev, D. Pavlidis, K. S. Boutros, J. Redwing,
    Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition,
    Journal of Applied Physics. vol.88, no.4; 15; p.1983-6, Aug. 2000

  5. E. Alekseev, D. Pavlidis, W. Sutton, A. Eisenbach,
    GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations,
    2000 Topical Workshop on Heterostructure Microelectronics, Kyoto, Japan, August 2000

  6. E. Alekseev, P. Nguyen-Tan, D. Pavlidis, M. Micovic, D. Wong, and C. Nguyen,
    Current-Injection Characterization of Breakdown in AlGaN/GaN MODFETs,
    17th IEEE/Cornell University Conference on Advanced Concepts in High Performance Devices, Ithaca, NY, August 2000

  7. E. Alekseev and D. Pavlidis,
    GaN Gunn Diodes for THz Signal Generation,
    2000 MTT-S International Microwave Symposium, Boston, MA, June 2000

  8. A. Eisenbach, E. Alekseev, S.M. Hubbard, and D. Pavlidis,
    Growth and Characterization of AlN/GaN MISFETs,
    24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2000), Aegean Sea, Greece, May 29 - June 02, 2000

  9. E. Alekseev, A. Eisenbach, D. Pavlidis, S.M. Hubbard, and W.E. Sutton,
    Development of GaN-based Gunn-Effect Millimeter-Wave Sources,
    24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2000), Aegean Sea, Greece, May 29 - June 02, 2000

  10. V. Ziegler, C. Gassler, C. Wolk, F.J. Berlec, R. Deufel, M. Berg, J. Dickmann, H. Schumacher, E. Alekseev, and D. Pavlidis,
    InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems,
    Indium Phosphide and Related Material Conference, Williamsburg, VA, May 22-25, 2000

  11. E. Alekseev, A. Eisenbach, D. Pavlidis, S.M. Hubbard, W. E. Sutton,
    GaN Gunn Diodes for THz Signal Generation,
    11th International Symposium on Space Terahertz Technology, University of Michigan, Ann Arbor, MI, May 1-3, 2000

  12. E. Alekseev and D. Pavlidis,
    Large-Signal Microwave Performance of GaN-based NDR Diode Oscillators,
    Solid-State Electronics, v.44 (4), p 941-947, April 2000

  13. E. Alekseev and D. Pavlidis,
    DC and High-Frequency Performance of AlGaN/GaN Heterojunction Bipolar Transistors    ,
    Solid-State Electronics, v.44 (2), 2000, p 245-252

  14. E. Alekseev and D. Pavlidis,
    Microwave Potential of GaN-based Gunn Devices,
    Electronics Letters, vol. 36, no. 2, 20 January 2000, p. 176-178

  15. S.H. Hsu, P. Nguyen-Tan, D. Pavlidis, E. Alekseev, N. X. Nguyen, C. Nguyen, and D. E. Grider,
    Frequency Dependent Output Resistance and Transconductance in AlGaN/GaN MODFETs,
    1999 International Semiconductor Device Research Symposium, Dec.7-9, Charlottesville, VA

  16. E. Alekseev, A. Eisenbach, and D.Pavlidis,
    Low Interface State Density AlN/GaN MISFETs,
    Electronics Letters, vol. 35, no. 24, 25th November, 1999, p. 2145-2146

  17. E. Alekseev, A. Eisenbach, and D. Pavlidis,
    Interface Properties and Electrical Characteristics of III-V Nitride-Based MISFETs,
    7th Gallium Arsenide and Related III-V Compound Application Symposium (GAAS'99), 1999 European Microwave Week, Munich, Germany

  18. E. Alekseev, A. Eisenbach and D.Pavlidis,
    Transferred Electron Devices Based on GaN,
    First GaN Electronic Devices Workshop, August 16-17, 1999 Ithaca, NY

  19. E.Alekseev, D.Pavlidis, N.X.Nguyen, C.Nguyen, and D.E.Grider,
    Large-Signal Characteristics of AlGaN/GaN Power MODFETs,
    1999 MTT-S International Microwave Symposium Digest, vol.2 pp.533-536

  20. E. Alekseev, A. Eisenbach, and D. Pavlidis,
    MOCVD Grown AlN/GaN HFETs,
    23rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE '99), Chantilly, France, May 26-28, 1999

  21. E. Alekseev, D. Pavlidis, N. X. Nguyen, C. Nguyen, and D. E. Grider,
    Power Performance of AlGaN/GaN HEMTs with 0.2 to 1mm Gate Widths,
    23rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE '99), Chantilly, France, May 26-28, 1999

  22. E.Alekseev, T.Hackbarth, J.Dickmann, and D.Pavlidis,
    High Switching Rate Capability of InGaAs PIN Diodes Switches,
    1999 Indium Phosphide and Related Material Conference Digest

  23. A.Eisenbach, E.Alekseev, and D.Pavlidis,
    Growth and Characterization of AlN/GaN HFETs,
    Ninth Biennial Organometallic Vapor Phase Epitaxy Workshop, Ponte Vedra Beach, Florida, May 23-27, 1999

  24. V. Ziegler, M. Berg, H. Tobler, C. Wolk, R. Deufel, J. Dickmann, A.Trasser, H. Schumacher, E. Alekseev, D. Pavlidis:
    Low-Power Consumption InGaAs PIN Diode Switches for V-Band Applications,
    Japanese Journal of Applied Physics, vol.38, no.2B; Feb. 1999; p.1208-10

  25. D. Pavlidis, E. Alekseev, A. Eisenbach, and A. Daniels,
    DC and High-Frequency Characteristics of GaN-based Heterojunction Bipolar Transistors,
    Proc. of the Workshop on Widebandgap Bipolar Devices, Panama City Beach, FL, Paper 5, Session 2, Jan. 25-28 1999

  26. E.Alekseev, D.Pavlidis, V.Ziegler, M.Berg, J.Dickmann,
    77GHz High-Isolation Transmit/Receive Switch Using InGaAs/InP PIN Diodes    ,
    1998 GaAs IC Symposium, pp.177-180

  27. V.Ziegler, M.Berg, H.Tobler, C.Wollk, R.Deufel, J.Dickmann, A.Trassser, H.Schumacher, E.Alekseev, D.Pavlidis,
    InP-Based Monolithic Integrated PIN Diode Switches for mm-Wave Applications,
    Proceedings of European Microwave Week. 5-6 Oct. 1998; Amsterdam, Netherlands. GAAS 98 Conference Proceedings. 1998; p.127-32

  28. E.Alekseev, D.Pavlidis, C.Tsironis,
    W-band On-Wafer Load-Pull Measurement System and Its Application to HEMT Characterization,
    1998 MTT-S International Microwave Symposium Digest, vol.3 pp.1479-82

  29. E.Alekseev, D.Pavlidis, D.Cui,
    Power-Handling Capability of W-band InGaAs PIN Diode Switches,
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials 1998, IEEE, 98CH36129. p 199-202

  30. V.Ziegler, M.Berg, H.Tobler, C.Wollk, R.Deufel, J.Dickmann, A.Trassser, H.Schumacher, E.Alekseev, D.Pavlidis,
    Ka-Band SPSTs in InP-Based Technology Using Coplanar Waveguides,
    Conference Proceedings - International Conference on Indium Phosphide and Related Materials 1998, IEEE, 98CH36129, p 427-430

  31. V.Ziegler, M.Berg, H.Tobler, C.Wolk, R.Deufel, J.Dickmann, A.Trasser, H.Schumacher, E.Alekseev, and D.Pavlidis,
    InGaAs/InP PIN Diode Switches For Very High Frequency Applications,
    Proceedings of 2nd ESA Workshop on Millimetre Wave Technology and Applications (WPP-149). ESA, Paris, France; 1998; p.187-91

  32. D.Pavlidis, E.Alekseev, K.Hong, D.Cui,
    InP-based millimeter-wave PIN diodes for switching and phase-shifting applications,
    Solid-State Electronics, 1997, v.41, n.10, pp.1635-39

  33. E.Alekseev, D.Pavlidis, D.Cui,
    High-Isolation W-band InP-based PIN Diode Monolithic Integrated Switches,
    Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1997, IEEE, 97CB36078. p 332-340

  34. E.Alekseev, D.Pavlidis, J.Dickmann, T.Hackbarth,
    W-band InGaAs/InP PIN diode monolithic integrated switches,
    Proceedings of 1996 GaAs Integrated Circuits Symposium, pp. 285-288

  35. E.Alekseev, K.Hong, D.Pavlidis, D.Sawdai, A.Samelis,
    InGaAs/InP PIN Diodes for Microwave and Millimeter-Wave Switching and Limiting Applications,
    Proceedings of 1995 International Semiconductor Device Research Symposium, pp.467-470

Group Biographies

Review of Group Activities

III-V Integrated Devices and Circuits Group

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