CHANG-HEE HONG

Chang-Hee Hong was born in Seoul, Korea. He received the B.S. degree in Electrical Engineering in 1984 from the Korea University and M.S. and Ph.D. degrees in Electrical Engineering in 1986 and 1991 respectively, from the Korea Advanced Institute of Science and Technology, Seoul, Korea.

Since 1987 he worked on MOCVD growth, fabrication and characterization of vertical transistors and optoelectronic devices at the Optoelectronics Laboratory of the Korea Advanced Institute of Science and Technology. His research interests cover the MOCVD growth for III-V Nitride materials, selective growth, characterization and fabrication of microwave devices based on InP materials.

He worked from 1991 to 1994 as a Research Fellow at the Solid-State Electronics Laboratory at the University of Michigan, Ann Arbor, doing research in the area of wide bandgap nitride semiconductor growth using MOCVD. In 1994 he joined Goldstar Seoul, Korea, as a Senior Research Engineer working in the area of Nitride Growth.

Dr. Hong participated in the following research programs:

• GaN Growth by OMVPE Techniques Using NH(3) and Novel Precursors

Group Biographies

Review of Group Activities