Waldemar Dos Passos was born in Sao Paulo, Brazil, in 1960. In 1969 he and his family emigrated to the United States. He obtained the B.A. degree in Physics from the University of California at Berkeley in 1982. In 1984 he obtained the M.S. degree in Physics from the University of California at Davis and in 1992 he received the Ph.D. degree in Physics from the University of Michigan under the direction of Professors Roy Clarke and Dimitris Pavlidis. His dissertation topic consisted of an interdisciplinary study in both physics and electrical engineering, involving the analysis and characterization of strained layers of III-V semiconductor material. A new time-resolved method utilizing synchrotro radiation to study the kinetics of strained layers as they under go rapid thermal annealing was also developed. Oncompleting his Ph.D, Dr. Dos Passos went on to post-doctoral work in medical physics at the Department of Radiation Oncology at the University of Michigan, Ann Arbor.