Group Biographies
Review of Group Activities
Nasserdine Draidia was born in Cirta-Con-stantine, Algeria. He received his first degree in physics at the University of Constantine in 1986. He obtained his M.Sc. in Optics-Optoelectronics and Microwaves from the Institut National Polytechnique de Grenoble (I.N.P.G.) in 1987. From 1987 to 1991 he was with the Centre National d'Etudes des Télécommunications, Bagneux,France, where he was involved in the epitaxial growth and characterization of III-V semiconductors. He obtained his Ph.D. in Electrical Engineering from the I.N.P.G. in 1991, and then joined the Physika-lishes Institute at the University of Stuttgart, Germany, where he was in charge of development of solar cells on GaAs. Following this he joined the Consiglio Nazional di Ricerca a Parma, Italy, as Visitor Scientist and in 1994 he joined the University of Michigan as a Research Fellow to participate in the development of GaN growth. Since November 1994 he has been at Picogiga-France, where he is currently working in the MBE field, and is in charge of the electrical characterization of HEMTs.