FREDERIQUE DUCROQUET


Frédérique Ducroquet was born in Lille,France in 1964. She received the Engineer Degree in Electronics in 1986 from the InstitutSupérieur du Nord and the Ph.D. degree in Material and Surface Sciences in 1989 from the Institut National des SciencesAppliquées, Lyon.

She joined the Laboratoire de Physique de la Matière (URA SNRS 358), Lyon, in 1986. She has worked on the electrical characterization of GaInAs photodiodes, specifically the effect of the passivation induced defects on the dark current. In 1991 she was a post-doctoral research fellow at the Solid-State Electronics Laboratory, University of Michigan, and was involved in the MOCVD growth and characterization of AlInAs-based heterostructures.

After her stay in Michigan, Dr. Ducroquet has worked as an Assistant Professor at the Laboratoire de Physique de la Matière, Lyon. Since October 1994, she is working at the Institutd'Electronique et de Microélectronique du Nord, Lille University, Lille France. Her research interests include the deep level analysis of semiconductor materials and the influence of defects on the electrical properties of heterostructure devices.


Email: fducro@iemnserv.iemn.univlille1.fr
[GaN] [InP] [GaAs] [MOCVD] [Mixer] [Gunn (NDR)] [PIN] [HBTs] [HEMTs] [MMICs]

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