YOUNGWOO KWON


Youngwoo Kwon was born in Korea in 1965. He received the B.S. degree in electronics engineering at the Seoul National University in 1988, and the M.S.E.E. and the Ph.D. degree in electrical engineering at the University of Michigan in 1990 and 1994. His work included the design and fabrication of submicron HEMTs and large-signal modeling and realization of heterostructure monolithic microwave and millimeter-wave integrated circuits.

He is presently at Rockwell International, Thousand Oaks, California as a member of Technical staff in the area of HEMT circuit design and technology.

Email: xscac@aol.com

Dr. Kwon participated in the following research programs:


[GaN] [InP] [GaAs] [MOCVD] [Mixer] [Gunn (NDR)] [PIN] [HBTs] [HEMTs] [MMICs]

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