Geok Ing Ng was born in Singapore. He received the B.S., M.S. and Ph.D. degrees in Electrical Engineering in 1984, 1986 and 1990, respectively, from the University of Michigan, Ann Arbor.
In 1985 Dr. Ng became a Research Assistant at the Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan and he became a Research Fellow in 1992, working at the Center for Space Terahertz Technology and High Frequency Microelectronics, University of Michigan. His research interests include device physics, fabrication and characterization of microwave devices with different III-V material systems for low-noise, power and monolithic microwave integrated circuit applications. Since 1993 he has been employed as a Senior Member of the Technical Staff of TRW, working in the area of HEMT product engineering.
Dr. Ng was awarded the 1990 European Micro-wave Prize for his work on InP based heterostructure monolithic amplifiers.