DIMITRIS PAVLIDIS

Department of Electrical Engineering & Computer Science
Solid-State Electronics Laboratory
1301 Beal Ave, Ann Arbor, Michigan 48109-2122
Tel: (734) 647-1778, Fax: (734) 763-9324
E-mail: pavlidis@umich.edu

Dimitris Pavlidis has been Professor of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor, USA, since 1986. He received the B.Sc. degree in Physics from the University of Patras, Patras, Greece, in 1972 and the Ph.D. degree from the University of Newcastle, Newcastle-upon-Tyne, England, in 1976. He continued as Postdoctoral Fellow at Newcastle until 1978, engaged in work on microwave semiconductor devices and circuits. In 1978 he joined the High Frequency Institute of the Technical University of Darmstadt, West Germany, working on III-V devices and establishing a new semiconductor technology facility. In 1980 he worked at the Central Electronic Engineering Research Institute, Pilani, India, as UNESCO consultant.

During 1980-1985 he was Engineer and Manager of the GaAs Monolithic Microwave Integrated Circuits (MMIC) Group of Thomson-CSF, Corbeville, France. In this capacity he was responsible for projects on monolithic power and broadband amplifiers, tunable oscillators, optical preamplifiers, phase shifters, attenuators, their technology and process evaluation, and the establishment of a component library for MMIC applications. His publications are in microwave semiconductor devices and circuits and he holds 6 patents on MMIC applications. His current research interests cover the design and fabrication of HEMTs, HBTs, MOCVD growth of InP-based and GaN materials, and monolithic heterostructure integrated circuits.

In 1990 Dr. Pavlidis was awarded the European Microwave Prize for his work on InP-based monolithic integrated HEMT amplifiers. In 1991 he was awarded the decoration of ``Chevalier'' by the French Ministry of National Education for distinguished work in the field of education. In 1992 he received the Japan Society for Promotion of Science Fellowship for Senior Scientists/Professors from the Japanese Government, and the Humboldt Research Award for Distinguished Senior U.S. Scientists. Dr. Pavlidis is an IEEE Fellow.

Dr. Pavlidis supervises in the following research programs:

• Noise Characteristics of InAlAs/InGaAs Heterostructure Devices

• Ultra-High Performance Submicron InAlAs/InGaAs HEMTs Using Novel Design and Technology

• Large Signal Modeling and Optimization of HBTs

• GaInP/GaAs HBTs

• Noise Characteristics of Heterojunction Bipolar Transistors (HBTs)

• New Analytic Determination of the Frequency Dependence of Current Gain and Power Gain in HBTs Applied to their High-Frequency Optimization and Study of Velocity Overshoot Effects in Precollectors Using Analytic Descriptions

• Self-Aligned Technology for GaAs and InP-based Heterojunction Bipolar Transistors (HBTs)

• InP-Based Heterostructure Monolithic Microwave Integrated Circuits For Signal Generation and Detection

• Planar Varactor Multiplier and Mixer Diodes for Submillimeter and THz Receivers

• GaN Growth Modeling

• GaN Growth by OMVPE Techniques Using NH(3) and Novel Precursors

• MOVPE Growth of InP-based Heterostructures

Email: pavlidis@engin.umich.edu

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