David Pehlke received his B.S. degree in Electrical Engineering from M.I.T. in 1986 and his Ph.D. from the University of Michigan in 1994. His thesis topic involved GaAs/AlGaAs HBT's with an emphasis on Process Technology Development in the areas of Self-Aligned Emitter-Base Structures, RIE and Wet Etching Processes for GaAs/AlGaAs Heterostructures, Development of Non Annealed P-Type Ohmic Contacts and Implant Technologies for Isolation and Device Area Reduction.
He is equally active in the study of HBT device physics and carrier transport mechanisms in HBTs, and DC and RF parameter extraction techniques for determining the physics of limitations to HBT performance, and is currently working as a member of the Technical Staff in the area of HBTs at Rockwell International, Thousand Oaks, California.
Dr. Pehlke participated in the following research programs:
