DR. DONALD SAWDAI

Donald Sawdai received his B.S. degree in electrical engineering with distinction from Ohio State University in 1993 and his M.S.E. degree in Electrical Engineering from The University of Michigan in 1994. In 1999 Don completed a Ph.D. degree in electrical engineering at The University of Michigan, with research emphasizing InP HBT design and fabrication for high-speed and power applications. His research interests include electronic and optoelectronic device structure and fabrication techniques. In 1999 Dr. Sawdai joined research technical staff of TRW

Donald Sawdai participated in the following research programs:

• Self-Aligned Technology for GaAs and InP-based Heterojunction Bipolar Transistors (HBTs)

• New Analytic Determination of the Frequency Dependence of Current Gain and Power Gain in HBTs Applied to their High-Frequency Optimization and Study of Velocity Overshoot Effects in Precollectors Using Analytic Descriptions

Email: donald.sawdai@trw.com

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