HIDENORI SHIMAWAKI

Hidenori Shimawaki was born in Aomori,Japan, in 1960. He received the M.S., B.S. and Ph.D. degrees in electronics in 1982, 1984 and 1987 respectively, from Tohokee University,Sendai, Japan.

From 1987 to 1990 he worked as a member of the research staff at NEC Corporation, Japan, engaged in work on InAs and InGaAs Atomic Layer Epitaxy for InP-based HBTs. Since 1990 he has been an Assistant Manager in the NEC Corporation working on design, fabrication and characterization of GaAs-based HBTs, especially with selectively grown extrinsic base regions. He has been also involved in reliability issues of HBTs with an emphasis on base-dopant diffusion. From 1993 to 1994 he worked as a Visiting Researcher at the University of Michigan, Ann Arbor doing research in the area of InP-based heterostructure bipolar transistors and their monolithic applications. In October 1994 he returned to Japan to join NEC where he is currently working as manager of the HBT Division.

Dr. Shimawaki is a member of the Japan Society of Applied Physics.

Dr. Shimawaki participated in the following research programs:

• Self-Aligned Technology for GaAs and InP-based Heterojunction Bipolar Transistors (HBTs)

Group Biographies

Review of Group Activities