Dr.
Volker Ziegler received
his Dr.-Ing. degree with Honors from the University of Ulm, Germany. Currently
he is a member of the DaimlerChrysler Knowledge Exchange Group and is working
in the group of Prof. Pavlidis as a visiting scholar.Email: volker.ziegler@ieee.org
His main research interests are III-V-semiconductor technology (GaN, InP, GaAs, metamorphic material) and devices (HFETs, PIN diodes) as well as the designing of MMICs for mm-wave applications. During his work at DaimlerChrysler, he developed the technology for the monolithic heterointegration of metamorphic PIN diodes and metamorphic HFETs on one GaAs substrate and designed multifunctional MMICs like a switch---low-noise-amplifier combination for V-band based on this new technology.
His current work at the Solid State Electronics Lab is on the large-signal modeling of GaN HFETs and the designing of monolithically integrated power amplifiers at X-band using GaN devices.