Rainer Matthias Weiss was born in Kassel, West Germany, in December 1958. He received the Diplom and Dr. Ing. degrees in electrical engineering at the Technische Hochschule Darmstadt, Darmstadt, West Germany, in 1984 and 1987.
During his studies, he worked at Thomson C.S.F., France, on monolithic microwave broad-band amplifiers in the 2-10-GHz frequency range and at the Theoretische Elektrotechnik Institute of the Technical University Darmstadt on the theoretical investigation of waveguides. From June 1984 to February 1987, he was a Researcher at Thomson Semiconducteurs, Orsay, France, working toward the Ph.D. degree on MESFET and HEMT large-signal properties. He joined the University of Michigan, Ann Arbor, as a Research Fellow in 1988, working in the area of heterojunction devices and monolithic integrated circuits. In 1990 he was awarded the European Microwave prize for his work on InP based monolithic integrated HEMT amplifiers.
Matthias Weiss passed away unexpectedly in August 1990.
