Egbert Woelk was born on July 16, 1957, in Beuel, West Germany. From 1977 to 1984 he studied physics at the Rheinisch-Westfälische Technische Hochschule, Aachen, West Germany, and passed the Vordiplom in 1980, continuing his studies at the Albert-Ludwigs Universität in Freiburg, West Germany. In 1981 he returned to Aachen and continued the studies in physics with a major in solid state physics and electronic devices. In 1984 he passed the Hauptdiplom with a Diplom thesis on ohmic contacts on GaInAs.
From 1984 to 1989 he was a member of the scientific staff with the Institut für Halbeitertechnik at the Rheinisch-Westfälischen Technischen Hochschule in Aachen, working with metalorganic vapor phase epitaxy (MOVPE) of III-V semiconductors. He holds a patent for the rotation technique using a gas bearing that is now widely used in MOVPE growth. In 1989 he received his Ph.D. degree in physics on ``MOVPE von GaInAs/InP für bipolare Baulemente''.
From 1989 to 1991 he worked as a Post-doctoral Research Fellow at the Center for High Frequency Microelectronics at the University of Michigan in Ann Arbor, Michigan. He was a member of the electronic devices group of Professor Pavlidis, responsible for the technical part of the purchase of a new MOVPE system for the University of Michigan.
Since 1991 he has been with AIXTRON GmbH in Aachen as a Project Manager. He is responsible for many internal and external development projects of MOCVD equipment and is responsible for sales and service in North America.
