YONGJO PARK
Yongjo Park was born in Korea. He received the B.S. degree in
metallurgical engineering from Seoul National University, Korea, in
1983, the M.S. degree from Korea Advanced Institute of Science and
Technology in 1985, and the Ph. D. degree from Carnegie Mellon
University, Pittsburgh, PA, in 1995 in materials science. From 1985 to
1990 he was involved in the development of turbine blades for aircrafts
at Korea Institute of Machinery and Metals. During 1990-1995 he was a
research assistant at Carnegie Mellon University, where he pursued the
Ph. D. in materials science in oxygen doping of GaAs during MOCVD and
electrical and optical characterization of the epilayers. In 1995 he
joined the Solid State Electronics Laboratory, the University of
Michigan, Ann Arbor, where he is working on MOCVD growth of III-V
nitrides and characterization of their properties. His research
interests include MOCVD growth of semiconductors and control of defects
in semiconductors for the improvement of electrical and optical properties.
Email: yjp@engin.umich.edu
URL: http://www-personal.engin.umich.edu/~yjp/
[GaN]
[InP]
[GaAs]
[MOCVD]
[Mixer]
[Gunn (NDR)]
[PIN]
[HBTs]
[HEMTs]
[MMICs]
This page, and all contents, are Copyright © 1995-2002
Solid State Electronics Laboratory,
Department of Electrical Engineering and Computer Science,
University of Michigan
The homepages are maintained by Xin Zhu