EECS 524

Field-Effect-Transistors and Microwave Monolithic Integrated Circuits Technology


Prerequisite: Graduate Standing and EECS 421, and either EECS 525 or EECS 528. II even years (3 credits)

Physical and electrical properties of III-V materials, epitaxy and ion-implantation, GaAs and InP based devices (MESFETs, HEMTs varactors) and Microwave Monolithic Integrated Circuits (MMICs). Cleaning, Photolithography, metal and dielectric deposition, wet and dry etching. Device isolation, ohmic and Schottky contacts, dielectrics, passive component technology, interconnects, via holes, dicing and mounting. Study of the above processes by DC characterization. dipoles, loops and traveling-wave antennas. Analysis and synthesis of linear arrays. Phased arrays. Input impedance and method of moments. Mutual impedance. Aperture antennas: slot, Babinet’s principle. Microstrip antennas. Horns, refl ector and lens antennas.

 
[GaN] [InP] [GaAs] [MOCVD] [Mixer] [Gunn (NDR)] [PIN] [HBTs] [HEMTs] [MMICs]
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