TECHNICAL DEVELOPMENTS OVER THE YEARS

Thanks to the continuous commitment of all group members and the collaborative spirit shown at all levels and cycles, the group's research led to major advances in fundamental understanding and state-of-the-art performances of III-V devices and circuits. Some of these key advances are described below.

Review of Group Activities

III-V Integrated Devices and Circuits Group
[GaN] [InP] [GaAs] [MOCVD] [Mixer] [Gunn (NDR)] [PIN] [HBTs] [HEMTs] [MMICs]
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