Heterostructure Microwave Monolithic Integrated Circuits
The objectives of the Microwave Monolithic Integrated Circuit's (MMIC's)
activity are the study and exploration of heterostructures such as
InAlAs/InGaAs for the realization of integrated functions at millimeter-wave
frequencies. Circuit types studied under the heterostructure
MMIC projects include amplifiers, oscillators, multipliers, mixers, attenuators
and phase-shifters. Accomplishments made in this area are listed below.
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Development of double-heterojunction AlGaAs/GaAs MMIC's with
improved performance over MESFET technology.
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Bridged-T/0.5-12.0 GHz attenuator with improved bandwidth, dynamic
range and insertion loss.
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T-phase shifter with enhanced capacitance ratio and phase-shift.
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Development of InAlAs/InGaAs submicron heterostructure MMIC's
with state-of-the-art characteristics.
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Improvement of intermodulation distortion point by 4dB in InGaAs/InAlAs
versus AlGaAs/GaAs HEMTs.
-
Bridged-T, T and PI monolithic amplitude control functions with excellent dynamic
range, bandwith and insertion loss.
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Analog monolithic T-phase shifter with excellent phase shift properties
using the highest reported capacitance ratios (~10:1) for monolithic devices.
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First heterostructure monolithic integrated amplifier using three-stages
of InAlAs/InGaAs HEMTs. Maximum gain was 22dB and return loss
better than 10dB from 6.0 to 9.5 GHz. Design goals were achieved using either
lattice matched or strained heteroepitaxy.
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First demonstration of W-band monolithic HEMT oscillator with 1.2 mW
output power at W-band.
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First demonstration of W-band monolithic HEMT mixer with 1dB conversion gain.
- First demonstration of a monolithic integrated HEMT doubler for 90 GHz
to 180 GHz signal upconversion. Conversion loss was 6dB at only 0dBm input power.
- First demonstration of a fully integrated monolithic oscillator and
doubler chain using submicron InAlAs/InGaAs technology for D-band (130.5 to 132.8 GHz)
operation. The output power was -12dBm for HEMTs of 45
um gate periphery. On chip
bias stabilization and an integrated E-field probe for output signal coupling were employed.
-
First demonstration of W-band dual gate InAlAs/InGaAs HEMT mixer
with on chip RF/LO coupling and integrated RF/LO/IF matching circuits and bias lines.
3dB conversion loss, better than 10dB return loss and more than 17dB isolation was
demonstrated experimentally.
- Demonstration of W-band planar balanced mixer using InAlAs/In GaAs
``HEMT-like'' mixer diodes. The mixer showed a minimum conversion loss of
12.4dB with 12dBm LO drive at 91 GHz, and 10 % bandwidth.
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Development of the 2D-spline technique for the representation of bias
dependence of HEMT nonlinear parameters and calculation of current and charges from
those parameters. Application of this technique to nonlinear MMIC modeling. New features
include better representation of the highly nonlinear HEMT characteristics and higher
flexibility in describing the nonlinear elements.
-
Application of an all frequency domain large-signal analysis based on bias
dependentS-parameters and harmonic balance on the evaluation of optimum load
conditions and transient behavior of InAlAs/InGaAs HEMT oscillators.
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Demonstration of record DC-RF efficiency (36 % at 35.6 GHz) from
InAlAs/InGaAs HEMT oscillators. A dual feedback technique was employed and the output power was 8.2mW.
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First demonstration of cascode pair InAlAs/InGaAs W-band HEMT oscillator
in order to enhance negative resistance and improve process tolerance. The MMIC
operated at 100 GHz with 2dBm output power.
-
First demonstration of D-band fundamental InAlAs/InGaAs HEMT oscillator.
Dual feedback, on-chip bias and an integrated E-field probe for signal output were
employed. 7.9dBm output power was obtained at 130.7 GHz using 90 um gate periphery.
-
Development of test cells and characterization techniques for evaluating high-speed
design criteria for Si and III-V based circuits.
[GaN]
[InP]
[GaAs]
[MOCVD]
[Mixer]
[Gunn (NDR)]
[PIN]
[HBTs]
[HEMTs]
[MMICs]
This page, and all contents, are Copyright © 1995-2002
Solid State Electronics Laboratory,
Department of Electrical Engineering and Computer Science,
University of Michigan
The homepages are maintained by Xin Zhu