Evolution of Characterization Capabilities at the University of Michigan

• Device-level S-parameter Characterization
• On-Wafer Probing: Manual and Automated

1988

• Baseband Device Noise Characterization
  - initially to 100KHz

1989

• W-band Test-Fixture Development
  - Finline
  - E-field Probe

1990

• On-Wafer Load-Pull and Noise Figure Characterization
• Baseband Device Noise Characterization Extended to 1 GHz

1991

• 90-180 GHz Test-Fixture Development
• Oscillator Characterization: Phase-noise, Upconversion
• Automated W-band Tuners Demonstration
• Integrated E-field Probe
• Noise Current Measurement Capability

1992

• Cold Noise Power/Noise Figure Characterization

1995

• Acquisition of automated wafer probe station for high speed circuit studies
• Acquisition of 50 GHz digital sampling instrumentation for TDR device and circuit studies
• Acquisition of photoluminescence characterization set-up for InP-and Nitride-based material studies
• In-situ mass spectrometry of Nitride MOCVD growth

1996

• On-wafer microwave measurement setup extended to 110 GHz
• Lightwave testset allows laser/photoreciever characterization up to 20GHz
• New high-power RF generator allows high temperature MOCVD growth of GaN
• High-Power DC characterization (3,000V/400A) using programmable Curve-Tracer
• Load-pull characterization with increased power at the DUT up to 37dBm

Technical Developments

Review of Group Activities