Evolution of Device and Circuit Design Capabilities at the University of Michigan

1987-1988

1. Ion Implantation Impact on MESFET Performance (Physical Modeling)

2. Large-signal Models for MESFETs and HEMTs

3. Analytical Charge Control Model for Single and Double Heterojunction HEMTs

4. Self-Consistent Charge Control Model for Strained HEMTs

1989

1. Monte Carlo Model of GaAs-based HBTs (Steady-State and Transient Analysis)

1990

1. Large-Signal/Non-Linear HFET Modeling

2. Monte Carlo Model of InP-based HBTs

3. Self-Consistent Model for Quantum Well Emission Transistors

1991

1. HEMT Breakdown Model

2. Large Signal Heterostructure MMIC Model

3. Power Analysis Models for HFET Oscillators

4. HBT Breakdown Model

5. Impact Ionization Models

6. Intermodulation Distortion Models

1992

1. Analytical Modeling techniques for HBTs

2. Noise power measurement algorithm for noise figure device characterization

3. Extraction of the cascode noise model of devices from noise factor evaluations

4. Tuner error simulation by Monte-Carlo and application to Y-factor and noise power measurement techniques

1993

1. Analytical expression for current gain, power gain, fT and fMAX of HBTs.

2. Analytic modeling of velocity overshoot effects in HBTs.

1994

1. 2D ensemble Monte-Carlo simulator for SH and DH InAlAs/InAlGaAs HEMTs

2. Delay time models for HEMTs

3. Analytic HBT models for nonlinear analysis using Volterra series

4. Large-signal models of HBTs by incorporating self-heating effects in Gummel-Poon BJT model and Harmonic Balance analysis

5. InP/InGaAs HBT large-signal model and incorporation of breakdown effects in Gummel-Poon formulation

Technical Developments

Review of Group Activities