FACILITIES OF THE SSEL
Within the Solid-State Electronics laboratory, complete facilities exist for solid-
state device and circuit fabrication. These facilities include equipment for mask making,
photolithography, oxidation and diffusion, dry pattern transfer (plasma, RIE), ion-beam
deposition and milling, vacuum evaporation and sputtering, chemical vapor depositon, and molecular-beam
epitaxy. Facilitiesfor the characterization of III-V semiconducting materials are available as well
as facilities for high-performance silicon-gate NMOS circuits and for the realization of
submicron-gate HEMT and MESFET structures, which are being optimized and applied in microwave and
high-speed logic circuiits. Instrumentation exists in the Laboratory for device characterization
to 350 GHz.
The Laboratory moved into a new Solid-State Fabrication Facility in the
EECS Building on the North Campus in September 1986. This state-of-the-art process facility has
been designed
as a center of excellence in the solid-state device area, with major thrusts planned
in the areas of high-speed devices and device technology, high-performance solid-state
sensors, optoelectronics, and automated semiconductor manufacturing. The Facility offers a full
range of process tools, including electron-beam lithography, MBE, MOMBE, MOCVD, ion implantation, and
LPCVD. This capability is centered in 4,000 square feet of class-100 processing area, with approximately
1000 square feet of
class-10 space devoted to submicron lithography. This Facility is intended as a catalyst for high
technology in the midwest and represents a major commitment by the University and the
State of Michigan to excellence in the above areas. The Facility includes:
- Processing Line for Indium Phosphide and Gallium Arsenide Devices and Circuits.
- Submicron Facility for Direct Wafer Writing and Mask Fabrication
- Film Deposition Line.
- Plasma Process Line.
- Material Growth Line.
- Processing Line for Silicon Circuits and Sensors.
- Testbed for Automated Semiconductor Processing.
- Separate Instruction Facility.
SSEL
Entry in the University Facility Index
[GaN]
[InP]
[GaAs]
[MOCVD]
[Mixer]
[Gunn (NDR)]
[PIN]
[HBTs]
[HEMTs]
[MMICs]
This page, and all contents, are Copyright © 1995-2002
Solid State Electronics Laboratory,
Department of Electrical Engineering and Computer Science,
University of Michigan
The homepages are maintained by Xin Zhu