Clean Room
The laboratory offers a full
range of process tools, including electron-beam lithography,
MBE, MOMBE, MOCVD, ion implantation, and
LPCV. This capability is centered in 4,000 square feet of
class-100 processing area, with approximately
1000 square feet of
class-10 space devoted to submicron lithography.
Facilities
- New Building on North Campus ($30Mof State Funds; 130,000 sq. ft.).
- Renovated Building on North Campus (30,000 sq. ft.).
- Solid-State Electronics Laboratory in New Building (12,000 sq. ft. of lab space;
1,000 sq. ft. Class 10, 4,000 sq. ft. Class 100, 3,000 sq. ft. Class 1,000 separate
instructional laboratory).
Material Growth Equipment
- RIBER 2300 MBE
- Varian Gen. II MBE
- Varian MO-MBE
- EMCORE GS3200 MOCVD
- Extrion 400 KeV Ion Implanter
- Thermo Diffusion Furnaces with DDC
- Thermo LPCVD &APCVD System
- Plasma Therm Deposition System
- Enerjet Sputtering System
- Liquid Phase Epitaxy
Processing Equipment
Characterization Equipment
- Olympus Interference Contrast Microscope
- DEKTAK Profiler
- Gaertner Ellipsometer
- Rudolf Spectroscopic Ellipsometer
- Automatic Test Equipment for Device Characterization up to 100 GHz
- Hot and cold probe station
Measurement Equipment
- C-V, C-t, DLTS and Optical DLTS
- Photocapacitance and Photoionization
- Low-temperature and Time Resolved
Photoluminescence (Streak Camera)
- Low-and High-Field Transport
Impact Ionization Coefficients
- High Magnetic Field Meas. (Sd-H, PL. absorption)
- High-Pressure diamond-anvil)
- Photothermal Ionization Spectroscopy (BOMEM)
- VHS/HF Device and Circuit Characterization
- Picosecond and Femtosecond Optical Spectroscopy
- Raman Scattering, X-Ray Diffractometer
[GaN]
[InP]
[GaAs]
[MOCVD]
[Mixer]
[Gunn (NDR)]
[PIN]
[HBTs]
[HEMTs]
[MMICs]
This page, and all contents, are Copyright © 1995-2002
Solid State Electronics Laboratory,
Department of Electrical Engineering and Computer Science,
University of Michigan
The homepages are maintained by Xin Zhu