RESEARCH PROGRAMS AND SPONSORS OF THE III-V INTEGRATED DEVICES AND CIRCUITS GROUP

Thanks to our sponsors we were able to grow and build a superb research program with exciting achievements. Their continuous support is gratefully acknowledged.

  1. Solid-State THz Sources
    June 99 - June 2003
    Defense Advanced Research Project Agency

  2. Metallorganic Chemical Vapor Deposition Growth Reactor for III-V Nitride Electronic Devices
    April 2000 - March 2001
    Office of Naval Research

  3. GaN MISFETs
    May 99 - July 2001
    Office of Naval Research

  4. Development of GaN-based HBTs
    A photograph of the reception of TRW Award
    August 2000 - July 2001
    TRW

  5. InP-Based Heterostructure MMICs
    January 2000 - September 2001
    Raytheon

  6. Study of SiGe-based devices for wireless applications
    August 1999 - July 2000
    IBM

  7. Power Amplification Considerations in InP HBTs
    November 1999 - March 2001
    NTT

  8. Topical Workshop on Heterostructure Microelectronics
    May 1998 - October 1999
    Office of Naval Research

  9. GaN Material Properties with Applications Toward New Device Technology
    October 1997-August 2000
    NASA Fellowship

  10. Low Frequency Noise of FETs
    October 1998-September 1999
    Vitesse Semiconductor

  11. Lithographic Mask Maker
    September 1998-August 1999
    National Science Foundation (Principal Investigator: C. Mastrangelo)

  12. Field Emission Analytical Microscope (Principal Investigator: J. Mansfield)
    September 1998-August 1999
    National Science Foundation

  13. III-V Nitride Negative Differential Resistance (NDR) Diodes for High-Frequency power Source Applications
    June 1998 - May 2001
    Office of Naval Research

  14. Development of Nitride Based HBTs
    June 1996-September 1996
    Japan Technology Management Center

  15. Low-Power, Low-Noise Electronics
    MURI-A.R.O. (Principal Investigator: G.I. Haddad)
    December 1995-December 2000

  16. Optical Testbed for Gbit Device and System Error Characterization
    U.S. A.R.O.
    June 1995-June 1996

  17. New Approaches for High-Quality Growth of Nitrides Based on Defect Control of Substrate-Film Interface
    ONR
    June 1995-June 1998

  18. Highly Reproducible and Reliable HBT-HPA MMICs
    Northrop Grumman / DARPA-MAFET
    September 1995-September 1998

  19. GaInP Technology for OEICs
    Thomson-CSF
    August 1995-March 1998

  20. Heterostructure MMIC Technology
    Daimler Benz
    January 1995-January 1998

  21. Millimeter-Wave Devices and Integrated Circuits
    NASA Fellowship
    May 1994-October 1995

  22. Micromachining of Millimeter-Wave Circuits
    Honeywell
    1994-April 1997

  23. High-Speed Circuit Design
    Advanced Research Projects Agency (ARPA)
    May 1994-December 1995

  24. Center for Optoelectronics Science and Technology
    Research Projects Agency (ARPA)
    October 1993-February 1997

  25. HBT Microwave Monolithic Integrated Circuits
    NEC-Japan
    November 1998-October 2001

  26. Process Induced Defects of InP-Based Heterostructure Devices
    National Science Foundation/CNRS-France
    1993-March 1997

  27. Fundamental Growth Studies on III-V Nitrides
    Office of Naval Research
    1992 - May 1995

  28. Heterojunction Bipolar Transistors for Power Applications
    Alacatel Espace
    October 1990 - April 1991

  29. Microwave Heterojunction Bipolar Transistors Displaying Reduced Low Frequency Noise
    Texas Instruments
    September 1990 - September 1993

  30. Center for Space Terahertz Technology
    Space Engineering Research Program
    Phase I:1988-1992, Phase II: 1992-1995

  31. Advanced TEGFET Technologies for Phased Arrays
    Alcatel Espace
    1988 - January 1991

  32. Theoretical and Experimental Characterization of Microstrip Elements and Interconnects in MMIC's
    ARO
    June 1987 - May 1990

  33. Heterostructure Devices and IC's
    Alcatel Espace
    January 1987 - January 1988

  34. Center for High Frequency Microelectronics
    ARO
    Phase I: January 1987 - April 1992, Phase II: June 1992 - February 1998

  35. Heterojunction Bipolar Technologies
    Bell Northern Research
    January 1987 - September 1994

  36. Heterostructure Monolithic Microwave Integrated Circuits
    Honeywell, Inc.
    December 1986 - January 1988

  37. Novel Semiconductor Devices
    Air Force Wright Patterson Laboratories
    February 1987 - March 1990

Review of Group Activities

III-V Integrated Devices and Circuits Group
[GaN] [InP] [GaAs] [MOCVD] [Mixer] [Gunn (NDR)] [PIN] [HBTs] [HEMTs] [MMICs]
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