GROUP PUBLICATIONS

The following is a list of group publications from work carried out at Michigan. This has very often been enriched by the stay of international visitors in our laboratory and by continuous collaborative efforts throughout the years of the group's existence with other laboratories, both nationally and internationally.

  1. A. K. Panda, D. Pavlidis, and E. Alekseev,
    DC, High-Frequency and Noise Characteristics of GaN-based IMPATTs,
    to be published in IEEE Transactions on Microwave Theory and Techniques

  2. E. Alekseev, D. Pavlidis, N. X. Nguyen, C. Nguyen, and D. E. Grider,
    Power Performance and Scalability of AlGaN/GaN Power MODFETs,
    IEEE Transactions on Microwave Theory and Techniques, Vol. 48, n. 10, pp 1694-1700, October 2000

  3. E. Alekseev, D. Pavlidis, T. Tsuchiya, and M. Kihara,
    Broadband AlGaN/GaN HEMT MMIC Attenuators with High Dynamic Range,
    2000 European Microwave Week, joined GAAS/EuMC session, Paris, France, October 2000

  4. T. Hashizume, E. Alekseev, D. Pavlidis, K. S. Boutros, J. Redwing,
    Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition,
    Journal of Applied Physics. vol.88, no.4; 15; p.1983-6, Aug. 2000

  5. E. Alekseev, D. Pavlidis, W. Sutton, A. Eisenbach,
    GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations,
    2000 Topical Workshop on Heterostructure Microelectronics, Kyoto, Japan, August 2000

  6. E. Alekseev, P. Nguyen-Tan, D. Pavlidis, M. Micovic, D. Wong, and C. Nguyen,
    Current-Injection Characterization of Breakdown in AlGaN/GaN MODFETs,
    17th IEEE/Cornell University Conference on Advanced Concepts in High Performance Devices, Ithaca, NY, August 2000

  7. E. Alekseev and D. Pavlidis,
    GaN Gunn Diodes for THz Signal Generation,
    2000 MTT-S International Microwave Symposium, Boston, MA, June 2000

  8. A. Eisenbach, E. Alekseev, S.M. Hubbard, and D. Pavlidis,
    Growth and Characterization of AlN/GaN MISFETs,
    24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2000), Aegean Sea, Greece, May 29 - June 02, 2000

  9. E. Alekseev, A. Eisenbach, D. Pavlidis, S.M. Hubbard, and W.E. Sutton,
    Development of GaN-based Gunn-Effect Millimeter-Wave Sources,
    24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2000), Aegean Sea, Greece, May 29 - June 02, 2000

  10. V. Ziegler, C. Gassler, C. Wolk, F.J. Berlec, R. Deufel, M. Berg, J. Dickmann, H. Schumacher, E. Alekseev, and D. Pavlidis,
    InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems,
    Indium Phosphide and Related Material Conference, Williamsburg, VA, May 22-25, 2000

  11. E. Alekseev, A. Eisenbach, D. Pavlidis, S.M. Hubbard, W. E. Sutton,
    GaN Gunn Diodes for THz Signal Generation,
    11th International Symposium on Space Terahertz Technology, University of Michigan, Ann Arbor, MI, May 1-3, 2000

  12. E. Alekseev and D. Pavlidis,
    Large-Signal Microwave Performance of GaN-based NDR Diode Oscillators,
    Solid-State Electronics, v.44 (4), p 941-947, April 2000

  13. E. Alekseev and D. Pavlidis,
    DC and High-Frequency Performance of AlGaN/GaN Heterojunction Bipolar Transistors,
    Solid-State Electronics, v.44 (2), 2000, p 245-252

  14. E. Alekseev and D. Pavlidis,
    Microwave Potential of GaN-based Gunn Devices,
    Electronics Letters, vol. 36, no. 2, 20 January 2000, p. 176-178

  15. S.H. Hsu, P. Nguyen-Tan, D.Pavlidis, E. Alekseev, N. X. Nguyen, C. Nguyen, and D. E. Grider,
    Frequency Dependent Output Resistance and Transconductance in AlGaN/GaN MODFETs,
    1999 International Semiconductor Device Research Symposium, Dec.7-9, Charlottesville, VA

  16. E. Alekseev, A. Eisenbach, and D.Pavlidis,
    Low Interface State Density AlN/GaN MISFETs,
    Electronics Letters, vol. 35, no. 24, 25th November, 1999, p. 2145-2146

  17. E. Alekseev, A. Eisenbach, and D. Pavlidis,
    Interface Properties and Electrical Characteristics of III-V Nitride-Based MISFETs,
    7th Gallium Arsenide and Related III-V Compound Application Symposium (GAAS'99), 1999 European Microwave Week, Munich, Germany

  18. E. Alekseev, A. Eisenbach and D.Pavlidis,
    Transferred Electron Devices Based on GaN,
    First GaN Electronic Devices Workshop, August 16-17, 1999 Ithaca, NY

  19. E.Alekseev, D.Pavlidis, N.X.Nguyen, C.Nguyen, and D.E.Grider,
    Large-Signal Characteristics of AlGaN/GaN Power MODFETs,
    1999 MTT-S International Microwave Symposium Digest, vol.2 pp.533-536

  20. E. Alekseev, A. Eisenbach, and D. Pavlidis,
    MOCVD Grown AlN/GaN HFETs,
    23rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE '99), Chantilly, France, May 26-28, 1999

  21. E. Alekseev, D. Pavlidis, N. X. Nguyen, C. Nguyen, and D. E. Grider,
    Power Performance of AlGaN/GaN HEMTs with 0.2 to 1mm Gate Widths,
    23rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE '99), Chantilly, France, May 26-28, 1999

  22. E.Alekseev, T.Hackbarth, J.Dickmann, and D.Pavlidis,
    High Switching Rate Capability of InGaAs PIN Diodes Switches,
    1999 Indium Phosphide and Related Material Conference Digest

  23. A.Eisenbach, E.Alekseev, and D.Pavlidis,
    Growth and Characterization of AlN/GaN HFETs,
    Ninth Biennial Organometallic Vapor Phase Epitaxy Workshop, Ponte Vedra Beach, Florida, May 23-27, 1999

  24. V. Ziegler, M. Berg, H. Tobler, C. Wolk, R. Deufel, J. Dickmann, A. Trasser, H. Schumacher, E. Alekseev, D. Pavlidis:
    Low-Power Consumption InGaAs PIN Diode Switches for V-Band Applications,
    Japanese Journal of Applied Physics, vol.38, no.2B; Feb. 1999; p.1208-10

  25. E.Alekseev, D.Pavlidis, V.Ziegler, M.Berg, J.Dickmann,
    77GHz High-Isolation Transmit/Receive Switch Using InGaAs/InP PIN Diodes    ,
    1998 GaAs IC Symposium, pp.177-180

  26. V.Ziegler, M.Berg, H.Tobler, C.Wollk, R.Deufel, J.Dickmann, A.Trassser, H.Schumacher, E.Alekseev, D.Pavlidis,
    InP-Based Monolithic Integrated PIN Diode Switches for mm-Wave Applications,
    Proceedings of European Microwave Week. 5-6 Oct. 1998; Amsterdam, Netherlands. GAAS 98 Conference Proceedings. 1998; p.127-32

  27. E. Alekseev, D. Pavlidis, C. Tsironis
    W-band On-Wafer Load-Pull Measurement System and Its Application to HEMT Characterization
    IEEE MTT-S International Microwave Symposium Digest, Baltimore, MD, Vol. 3, pp. 1479-1482, June 7-9, 1998

  28. J.W. Park, S. Mohammadi, D. Pavlidis, C. Dua, J.C. Garcia
    GaInP/GaAs HBT Broadband Monolithic Transimpedance Amplifiers and Their High Frequency Small and Large Signal Characteristics
    IEEE MTT-S International Microwave Symposium Digest, (IEEE Radio Frequency Integrated Circuits, RFIC '98), Baltimore, MD, Vol. 1, pp. 39-42, June 7-9, 1998

  29. J. Ch. Garcia, C. Dua, S. Mohammadi, J. W. Park, D. Pavlidis
    Growth Characteristics of Hydride-Free Chemical Beam Epitaxy and Application to GalnP/GaAs Heterojunction Bipolar Transistors
    Journal of Electronic Materials, Vol. 27, No. 5, pp. 442-445, May 1998

  30. J. Park, S. Mohammadi, D. Pavlidis
    GaInP/GaAs HBT Technology Using TBA, TBP Precursors and Application to Optoelectronic Circuits
    22nd Workshop on Compound Semiconductor Devices anf Integrated Circuits (WOCSDICE '98), Zeuthen, Germany, pp. 33-34, May 24-27, 1998

  31. D. Sawdai, D. Pavlidis, S. Mohammadi
    Power Amplification using NPN and PNP InP HBTs and Application to Push-Pull Circuits
    22nd Workshop on Compound Semiconductor Devices anf Integrated Circuits (WOCSDICE '98), Zeuthen, Germany, pp. 45-46, May 24-27, 1998

  32. S. K. Krawcyk, M. Bejar, R.C. Blanchet, A. Khoukh, B. Sermage, D. Cui, D. Pavlidis
    New Scanning Photoluminescence Technique For Quantitative Mapping the Surface Recombination Velocity in InP and Related Materials
    Proceedings of the IEEE International Conference on Indium Phosphide and Related Materials (IEEE-IPRM '98), Tsukuba, Japan, pp. 751-753, May 11-15, 1998

  33. D. Pavlidis
    Metalorganic Chemical Vapor Deposition (MOCVD) Material Growth and Application to InP-Based Electronic Devices
    Proceedings of the IEEE International Conference on Indium Phosphide and Related Materials (IEEE-IPRM '98), Tsukuba, Japan, pp. 477-480, May 11-15, 1998

  34. V. Ziegler, M. Berg, H. Tobler, C. Wollk, R. Deufel, J. Dickmann, A. Trassser, H. Schumacher, E. Alekseev, D. Pavlidis
    Ka-Band SPSTs in InP-Based Technology Using Coplanar Waveguides
    Proceedings of the IEEE International Conference on Indium Phosphide and Related Materials (IEEE-IPRM '98), Tsukuba, Japan, pp. 427-430, May 11-15, 1998

  35. E. Alekseev, D. Cui, D. Pavlidis
    Power-Handling Capability of W-Band InGaAs Pin Diode Switches
    Proceedings of the IEEE International Conference on Indium Phosphide and Related Materials (IEEE-IPRM '98), Tsukuba, Japan, pp. 199-202, May 11-15, 1998

  36. D. Sawdai, X. Zhang, D. Pavlidis, P. Bhattacharya
    Power Performance of PNP InAlAs/InGaAs HBTs
    Proceedings of the IEEE International Conference on Indium Phosphide and Related Materials (IEEE-IPRM '98), Tsukuba, Japan, pp. 72-75, May 11-15, 1998

  37. J. Cao, D. Pavlidis, Y. Park, J. Singh, A. Eisenbach
    Improved Quality GaN by MOCVD Growth on Compliant Silicon-on-Insulator (SOI) Substrates
    Journal of Applied Physics, Vol. 83 No. 7, pp. 3829-3834, April 1, 1998

  38. D. Pavlidis and A. Eisenbach
    Growth of GaN Layers on SOI subtrates by Metalorganic Chemical Vapor Desposition and Their Electrical and Optical Properties
    Workshop on Bonding and Complaint Substrates, San Juan, CA, February 1-5, 1998

  39. P. Marsh, D. Pavlidis and K. Hong
    InGaAs-Schottky Contacts Made by In-situ Plated Evaporated Pt
    IEEE Transactions on Electronic Devices, Vol. 45, No. 2, pp. 1-12, February, 1998

  40. W.C.H. Choy, P.J. Hughes, B.L. Weis, E.H. Li, K. Hong, and D. Pavlidis
    The Effect of Growth Interruption on the Properties of InGaAs/InAlAs Qunatum Well Structures
    Applied Physics Letters, Vol. 72 No. 3, pp. 338-340, January 19, 1998

  41. V.Ziegler, M.Berg, H.Tobler, C.Wolk, R.Deufel, J.Dickmann, A.Trasser, H.Schumacher, E.Alekseev, and D.Pavlidis,
    InGaAs/InP PIN Diode Switches For Very High Frequency Applications,
    Proceedings of 2nd ESA Workshop on Millimetre Wave Technology and Applications (WPP-149). ESA, Paris, France; 1998; p.187-91

  42. A. Philippe, C. Bru-Chevallier, G. Guillot, J. Cao, D. Pavlidis, A. Eisenbach
    Photoluminescence Characteristics of GaN Layers Grown on SOI Substrates and Relation to Material Properties
    1997 Fall Meeting, Material Research Society, (MRS '97), Nitride Semiconductors Symposium, Boston, MA, pp. 307-312, December 1-5, 1997

  43. J. Cao, D. Pavlidis, A. Eisenbach, C. Bru-Chevallier and G. Guillot
    Photoluminescence Properties of GaN Grown on Compliant Silicon-on-Insulator (SOI) Subtrates
    Applied Physics Letters, Vol. 71, No. 26, pp. 3880-3882, December 1997

  44. B. Bayraktaroglu, G. Dix, S. Mohammadi and D. Pavlidis
    AlGaAs/GaAs Reliability: Dependence on Material and Correlation to Baseband Noise
    GaAs Integrated Circuits Symposium Technical Digest 1997, Anaheim, CA, pp.157-160, October 12-15, 1997

  45. D. Pavlidis, E. Alekseev, K. Hong and D. Cui
    InP-Based Millimeter-Wave PIN Diodes for Switching and Phase-Shifting Applications
    Special Issue of Solid-State Electronics , Vol. 41, No. 10, pp.1635-1639, October 1997

  46. I. Tiginyanu, D. Pavlidis, J. Cao, A. Eisenbach, V. Ichizli, H.L. Hartnagel, A. Anedda, R. Corpino
    Time-Resolved Photoluminescence Characterization of GaN Layers Grown by Metalorganic Chemical Vapor Deposition
    Defect Recognition and Image Processing (DRIP '97), Berlin, Germany, pp. 351-354, September, 1997

  47. Y. Baltagi, C. Bru-Chevallier, G. Guillot, K. Hong and D. Pavlidis
    Impact of Growth Interruption on Interface Roughness of MOCVD Grown InGaAs/InAlAs Studied by Photoreflectance Spectroscopy
    Proceedings of the 24th International Symposium on Compound Semiconductors (ISCS '97), San Diego, CA, pp. 57-60, September 7-11, 1997

  48. A. Sibai, F. Ducroquet, K. Hong, D. Cui and D. Pavlidis
    Fourier Transform Infrared Spectroscopy (FTIR), SIMS and Raman Scattering Analysis of Heavily Carbon Doped MOCVD Grown In0.53Ga0.47As
    Proceedings of the 24th International Symposium on Compound Semiconductors (ISCS '97), San Diego, CA, pp. 311-314, September 7-11, 1997

  49. J.W. Park, D. Pavlidis, S. Mohammadi, C. Dua and J.C. Garcia
    Improved High Frequency Performance by Composite Emitter AlGaAs/GaInP Heterojunction Bipolar Transistors Fabricated Using Chemical Beam Epitaxy
    Proceedings of the 24th International Symposium on Compound Semiconductors (ISCS '97), San Diego, CA, pp. 439-442, September 7-11, 1997

  50. S. Mohammadi, D. Pavlidis and B. Bayraktaroglu
    Low-Frequency Noise Characterization of High- and Low-Reliability AlGaAs/GaAs HBTs
    Proceedings of the 24th International Symposium on Compound Semiconductors (ISCS '97), San Diego, CA, pp. 447-450, September 7-11, 1997

  51. A. Eisenbach, D. Pavlidis, C. Bru-Chevallier, C. Dubois, and G. Guillot
    Impact of GaN Buffer Growth Conditions on Photoluminescence and Background Carrier Concentration of MOVPE Grown Bulk GaN
    Proceedings of the 24th International Symposium on Compound Semiconductors (ISCS '97), San Diego, CA, pp. 219-222, September 7-11, 1997

  52. E. Alekseev, D. Pavlidis and D. Cui
    InGaAs PIN Diodes for High-Isolation W-Band Monolithic Integrated Switching Applications
    Sixteenth Biennial IEEE/Cornell University Conference, Ithaca, NY, pp. 332-340, August 4-6, 1997

  53. D. Sawdai, X. Zhang, D. Pavlidis, and P. Bhattacharya
    Performance Optimization of PNP InAlAs/InGaAs HBTs
    Sixteenth Biennial IEEE/Cornell University Conference, Ithaca, NY, pp. 269-277, August 4-6, 1997

  54. D. Pavlidis
    Noise in High Speed Devices
    Proceedings of the 4th International Conference on Noise in Physical Systems and 1/f Fluctuations (NPSF '97), Leuven, Belgium, pp. 11-16, July 14-18, 1997

  55. A. Dehe, D. Pavlidis, K. Hong, H. Hartnagel
    InGaAs/InP Thermoelectric Infrared Sensor Utilizing Surface Bulk Micromachining Technology
    IEEE Transactions on Electron Devices, Vol. 44, No. 7, July 1997. pp. 1066-1075

  56. P. Marsh, D. Pavlidis, K. Hong
    MOVPE-Grown Millimeter-Wave InGaAs Mixer Diode Technology and Results
    IEEE Transactions on Electron Devices, Vol. 44, No. 7, July 1997. pp. 1052-1058

  57. A. Samelis and D. Pavlidis
    DC to High-Frequency HBT Model Parameter Evaluation Using Impedance Block Conditioned Optimization
    IEEE Transactions on Microwave Theory and Techniques.. Vol. 45, No. 6, June 1997, pp. 886-897

  58. P. Marsh and D. Pavlidis
    Noise Analysis of InGaAs Mixer Diodes at Millimeterwave and FAR-Infrared Frequencies
    Workshop on Compound Semiconductor Devices and Integrated Circuits. (WOCSDICE '97). Scheveningen, The Netherlands, May 25-28, 1997, pp.67-68

  59. S. Mohammadi, D. Pavlidis and B. Bayraktaroglu
    A Novel Approach for Determining the Reliability of AlGaAs/GaAs Single HBTs from Low-Frequency Noise Characteristics.
    Workshop on Compound Semiconductor Devices anf Integrated Circuits (WOCSDICE), Scheveningen, The Netherlands, May 25-28, 1997, pp. 26-27

  60. J. Cao, D. Pavlidis, Y. Park, J. Singh, A. Eisenbach
    Growth on GaN Films on Compliant Silicon on Insulator (SOI) Substrates
    Eighth Biennial Workshop on Organicmetallic Vapor Phase Epitaxy, Marriott's Laguna Cliff Resort, Dana Point, CA, April 13-17, 1997. Paper #84, pp

  61. A. Samelis, D. Pavlidis
    Analysis of the Large-Signal Characteristics of Power Heterojunction Bipolar Transistors Exhibiting Self-Heating Effects
    IEEE Transactions on Microwave Theory and Techniques. Vol. 45, No. 4 , April, 1997. pp. 534-542

  62. J. Horn, D. Pavlidis, Y. Park, H. Hartnagel
    Scanning Tunneling Microscopy Characterization of MOCVD Grown GaN
    Materials Science Engineering, Special Issue of EXMATEC '97, Vol. B44, pp. 414-418. February 1997

  63. K. Wang and D. Pavlidis
    Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates
    IEEE Journal of Electronic Materials., Vol. 26, No. 1, 1997. pp.1-6

  64. A. Samelis, D. Pavlidis, S. Chandrasekhar and L.M. Lunardi
    Large-Signal Characteristics of InP-Based Heterojunction Bipolar Transistors and Optoelectronic Cascode Transimpedance
    IEEE Transactions on Electron Devices. Vol. 43, No. 12, December 1996. pp. 2053-2061

  65. Y. Kwon, D. Pavlidis, K. Hein, T. Brock
    Striped-Channel InAlAs/InGaAs HEMT's with Shallow Grating Structures
    IEEE Transaction on Electron Devices. Vol. 43, No. 12, December, 1996. pp. 2046-2052

  66. A. Dehe, D. Pavlidis, K. Hong, H. Hartnagel
    Properties of InGaAs/InP Thermoelectric and Surface Bulk Micromachined Infrared Sensor
    Applied Physics Letters. Vol. 69, No.20, November 11, 1996. pp. 3039-3041

  67. E. Alekseev, D. Pavlidis, T. Hackbarth
    W-band InGaAs/InP PIN Diode Monolithic Integrated Switches
    GaAs IC 1996. Peabody Hotel, Orlando, Florida. November 3-6, 1996. pp. 285-288

  68. Y. Park and D. Pavlidis
    Mass Spectroscopy Study of GaN Metalorganic Vapor Deposition
    Journal of Electronic Materials. Vol. 25, No. 9, September 1996. pp.1554-1560

  69. D. Pavlidis, E. Alekseev, K. Hong, D. Cui
    InP-based Millimeter-Wave PIN Diodes for Switching and Phase Shifting Applications
    Topical Workshop in Heterostructure Microelectronics (TWHM '96 Proceedings) Sapporo Therme International Hotel, Sapporo, Japan, August 18-21, 1996

  70. K. Wang, D. Pavlidis and J. Singh
    Initial Stages of GaN/GaAs (100) by Metalorganic Chemical Vapor Deposition
    Journal of Applied Physics. Vol. 80, No. 3, August 1, 1996, pp. 1823-1829

  71. Y. Park and D. Pavlidis
    In-Situ Characterization of GaN MOCVD Growth Using Mass Spectroscopy
    38th Electronic Materials Conference. Santa Barbara, June 1996. Paper No. CC1.

  72. J.Ch. Garcia, C. Dua, S. Mohammadi, and D. Pavlidis
    Hydride-Free Chemical Beam Epitaxy Processes and Application to GaInP/GaAs Heterojunction Bipolar Transistors.
    38th Electronic Materials Conference. Santa Barbara, CA June 1996. Paper No. EE9

  73. D. Pavlidis
    Status of Heterostructure Field Effect Transistor Developments
    Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Lithuania, May 19-21, 1996. pp 106-107

  74. D. Pavlidis and K. Hong
    Low-Leakage Buffers for MOCVD Grown InAlAs/InGaAs HEMTs
    Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Vilnius, Lithuania, May 19-21, 1996. pp 28-29

  75. J. Horn, D. Pavlidis, Y. Park, H. Hartnagel
    Scanning Tunneling Microscopy Characterization of MOCVD Grown GaN
    3rd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technology (EXMATEC Proceedings '96), Freiburg, Germany, May 12-15, 1996. Paper No. 9.3

  76. Phil Marsh, K. Hong and D. Pavlidis
    InGaAs-Based MM-Wave Integrated Subharmonic Mixer Exhibiting Low Input Power Requirement and Low Noise Characteristics
    Proceedings of the 8th International Conferences on Indium Phosphide and Related Materials. Convention Center Stadtgarten, Schwebisch Gemund, Germany, April 21-24, 1996, pp 57-60

  77. D. Sawdai, J-O Plouchart, D. Pavlidis, A. Samelis, and K. Hong
    Power Performance of InGaAs/InP Single HBTs
    Proceedings of the 8th International Conferences on Indium Phosphide and Related Materials. Convention Center Stadtgarten, Schwebisch Gemund, Germany. April 21-24, 1996, pp.133-136

  78. K. Hong, D. Pavlidis
    Material and Electrical Characteristics of Iron Doped Pt-InAlAs Schottky Diodes Grown by LP-MOCVD
    Journal of Electronic Materials, Vol. 25, No. 4, April 1996, pp. 627-632

  79. K. Hong, D. Pavlidis
    Growth and Characterization of Heavily Carbon Doped InGaAs Lattice Matched to InP by LP-MOCVD Using Liquid CCl4
    Journal of Electronic Materials.. Vol. 25, No. 3, March 1996, pp. 449-456

  80. Y. Kwon, D. Pavlidis
    Delay Time Analysis of Submicron InP-Based HEMTs
    IEEE Transactions on Electron Devices, Vol. 43, No. 2, February 1996, pp 228-237

  81. A. Samelis, D. Pavlidis, S., Chandrasekhar
    Analysis of the Large-Signal Characteristics of InP/InGaAs-Based Optoelectronic Preamplifiers
    Microwave and Optical Technology Letters.. Vol. 11, No. 3, February 1996, pp. 163-168

  82. E. Alekseev, K.Hong, D. Pavlidis, D. Sawdai and A. Samelis
    InGaAs/InP PIN Diodes for Microwave and Millimeter-Wave Switching and Limiting Applications
    Proceedings of the International Semiconductor Device Research Symposium, Charlottesville, VA, December 1995. pp. 467-470

  83. P. Marsh, D. Pavlidis and K.Hong
    Low Noise mm-Wave Integrated InGaAs-Based Mixers
    1995 IEEE GaAs IC Symposium. San Diego, CA, October 1995, Paper I.4-2, pp.253-256.

  84. Y.W. Kwon and D. Pavlidis
    Phasor Diagram Analysis of Millimeter-Wave HEMT Mixers
    IEEE Transaction on MTT, Vol. 43, No. 9, pp. 2165-2167. September 1995

  85. D. Sawdai, K. Hong and D. Pavlidis
    High Power Performance InP/InGaAs Single HBTs
    22nd International Symposium on Compound Semiconductors. Cheju Island, Korea, August 1995. Paper PF-21., Institute of Physics Conference Series, Chapter 4, pp. 621-626

  86. K. Wang, D.Pavlidis and J. Singh
    Atomic Force Microscopy and Growth Modeling of GaN Nucleation Layers on (001) GaAs by Metalorganic Chemical Vapor Deposition
    22nd International Symposium on Compound Semiconductors, Cheju Island, Korea, August 1995, Paper TuA1-4., Institute of Physics Conference Series, Chapter 2, pp. 121-126

  87. A. Samelis, D, Pavlidis, D.R. Pehlke, W.J. Ho, J.A. Higgins and A. Sailor
    Comparison of the Load Pull Power Characteristics of Common-Emitter and Common-Base Heterojunction Bipolar Transistors
    15th Biennial IEEE Cornell Univeristy Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY. August, 1995, pp. 243-252

  88. C.H. Hong, D. Pavlidis, K. Hong and K. Wang
    Phase-controlled metal-organic Chemical Vapor Deposition Epitaxial Growth of GaN on GaAs(100) using NH3
    Materials Science & Engineering B, pp 69-74. August, 1995

  89. D. Pavlidis, K. Hong, K. Hein and Y. Kwon
    Material and Device Properties of MOCVD Grown InA1As/InGaAs HEMTs
    Solid-State Electronics Vol.38, No. 9, pp. 1697-1701, August 1995

  90. D. Pavlidis, K. Hong, K. Hein and Y. Kwon
    Material and Device Properties of MOCVD Grown InA1As/InGaAs HEMTs
    Topical Workshop On Heterostructure Microelectronics. Susono-City JAPAN, August 1994

  91. D. Pavlidis
    GaN and Related Compounds for Wide Bondage Applications
    NATO Advanced Research Workshop on Future Trends in Microelectronics Bendor, France, July 1995.

  92. M. Tutt, D. Pavlidis, A. Khatibzadeh and B. Bayraktaroglu
    The Role of Baseband Noise and Its Upconversion In HBT Oscillator Phase Noise
    IEEE Transactions on Microwave Theory and Techniques, pp. 1461-1471, July, 1995

  93. Y. Kwon, D. Pavlidis, T. Brock and D. Streit
    Experimental and Theoretical Characteristics of High Performance Pseudomorphic Double Heterojunction InAlAs/In0.7Ga0.3As/InAlAs HEMTs
    IEEE Transactions on Electron Devices, Vol.42, No. 6, 1017-1025, June 1995

  94. A. Samelis and D. Pavlidis
    Modeling HBT Self-Heating
    Applied Microwave and Wireless, Summer Issue of 1995, pp. 56-64

  95. D. Pavlidis and K. Hong
    Carbon Doping of InGaAs for InP-Based HBTs Using Liquid CCl4 Source
    Digest of the 19th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Stockholm, Sweden May 1995, Paper 5.3

  96. D. Pavlidis, A. Samelis, S. Chandrasekhar and L.M. Lunardi
    Large-Signal Design and Considerations of InP/InGaAs Heterojunction Bipolar Transistor Based OEICs
    Digest of the 19th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Stockholm, Sweden May 1995, Paper 1.2

  97. A. Samelis and D. Pavlidis
    A Heterojunction Bipolar Transistor Large-Signal Model for High Power Microwave Applications
    IEEE MTT-S International Microwave Symposium Digest, Orlando. FL, May 1995 pp. 1231-1234

  98. A. Samelis, F. Sejalon, D. Pavlidis, S. Chandrasekhar and L. Lunardi
    Large-Signal Characteristics of InP-Based Heterojunction Bipolar Transistors and their Use in Optoelectronic Preamplifier Design
    Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, Sapporo, Japan, pp. 648-651 May 1995

  99. K. Hong and D. Pavlidis
    Characteristics of iron Doped Pt-InAlAs Schottky Diodes Grown by LP-MOCVD Using Ferrocene
    Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, Sapporo, Japan, May 1995, pp. 432-435

  100. K. Hong, C. Klingelhefer, F. Ducroquet, M.F. Nuban, E. Bearzi, D. Pavlidis, S. Krawczyk and G. Guillot
    Use of Spectrally Resolved Scanning Photoluminescence for Optimizing the Growth Conditions of InAlAs/InP Heterostructures
    Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, Sapporo, Japan, May 1995, pp. 241-244

  101. K. Hong and D. Pavlidis
    Heavily Carbon Doped InGaAs Lattice Matched to InP Grown by LP-MOCVD Using TMIn, TMGa, and Liquid CCL4
    Proceedings of the 7th International Conference on Indium Phosphide and Related Materials, Sapporo, Japan, May 1995, pp. 144-147

  102. C-H. Hong, D. Pavlidis and K. Wang
    Epitaxial Growth of Cubic GaN 0n (111) GaAs by Metalorganic Chemical. Vapor Deposition
    IEEE Journal of Electronic Materials, Vol. 24, No. 4, April 1995, pp.213-218

  103. P. Marsh, K. Hong and D. Pavlidis
    Low-Noise MOVPE grown Planar InGaAs Mixer Diodes
    Proceedings of the Sixth THz Symposium, Los Angeles, CA, March 1995

  104. C. H. Hong, D. Pavlidis, S.W. Brown and S.C. Rand
    Photoluminescence Investigation of GaN films grown by metalorganic chemical-vapor deposition on (100) GaAs
    Journal of Applied Physics, Vol.77 (4), 15 February 1995, pp. 1705-1709

  105. M.N. Tutt, D. Pavlidis, A. Khatibzadeh and B. Bayraktaroglu
    Low Frequency Noise Characteristics of Self-Aligned GaAs/AlGaAs Heterojunction Bipolar Transistors
    IEEE Transactions on Electron Devices, Vol. 42, No. 2, pp. 219-230, February 1995.

  106. J. Jakumeit, M.N. Tutt and D. Pavlidis
    Quantum State Transfer in Double Quantum Well Devices
    Journal of Applied Physics, Vol. 76, 1 December, 1994, pp.7428-7436

  107. D. Pavlidis, J. Singh, C.H. Hong and K. Wang
    Experimental Characteristics of GaN Grown on (100) and (111) GaAs Substrates and Modeling of GaN Growth Kinetics
    2nd Workshop on Wide Bandgap Nitrides, St. Louis, MO, October 17-18, 1994

  108. G.I. Ng, D. Pavlidis, A. Samelis, D. Pehlke, J.C. Garcia and J.P. Hirtz
    A Comparative Study of GaInP/GaAs Heterojunction Bipolar Transistors Grown by CBE Using TBA/TBP and AsH3/PH3 Sources
    IEEE Electron Device Letters, October 1994, pp.380-382

  109. K. Wang, J. Singh and D. Pavlidis
    Growth Mechanics of GaN by Monte Carlo Modeling
    Proceedings of the 21st International Symposium on Compound Semiconductors, San Diego, CA, September 94, paper TUP3.8

  110. C-H. Hong, K. Wang and D. Pavlidis
    Epitaxial Growth and Optical Properties of Cubic GaN on (100) and (111) GaAs Grown by Metalorganic Chemical Vapor Deposition
    Proceedings of the 21st International Symposium on Compound Semiconductors, San Diego, CA, September 94, paper TUP3.3

  111. K. Wang, J. Singh and D. Pavlidis
    Theoretical Study of GaN Growth: A Monte Carlo Approach
    Journal of Applied Physics, Vol. 76 (6), 15 September 1994, pp.3502-3510

  112. K. Hong, P. Marsh, G.I. Ng, D. Pavlidis and C.H. Hong
    Optimization of the MOVPE Grown InxAl1-xAs/In0.53Ga0.47As Planar Heteroepitaxial Schottky Diodes for Terahertz Applications
    IEEE Transactions on Electron Devices, Vol.41, No. 9, September 1994, pp.1489-1497

  113. D.Costa, M.Tutt, A.Khatibzadeh, D.Pavlidis
    Tradeoff Between 1/f Noise and Microwave Performance in AlGaAs/GaAs HBT
    IEEE Transactions on Electron Devices, Vol.41, No.8. pp. 1347-1350, August 1994

  114. A. Samelis, D. Pehlke and D. Pavlidis
    Volterra Series Based Nonlinear Simulation of HBTs
    Electronics Letters, 23rd June 1994, Vol. 30, No. 13, pp. 1098-1099

  115. C-H. Hong, K. Wang and D. Pavlidis
    Epitaxial Growth of Cubic GaN 0n (111)GaAs by Metalorganic Chemical Vapor Disposition
    Proceedings of the 36th Electronic Materials Conference, Paper Q5., June 1994, Boulder CO

  116. D. Pavlidis, P. Marsh, K. Hong and G.I. Ng
    THz Planar Varactor Diodes Based on InAlAs/InGaAs Heterostructures
    Digest of the 18th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE, Cork, Ireland, May 1994, Paper 6.4

  117. D. Pavlidis, C-H. Hong and K. Wang
    Growth and Material Characteristics of Cubic GaN on GaAs Substrates
    Digest of the 18th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Cork, Ireland, May 1994, Paper 1.2

  118. D. Costa, M. Tutt, A. Khatibzadeh, D. Pavlidis
    Tradeoff Between 1/f Noise and Microwave Performance in AlGaAs/GaAs HBT
    IEEE Transactions on Electron Devices, Vol.41, No.8. August 1994, pp1347-1350

  119. Y. Kwon, D. Pavlidis, P. Marsh, T. Brock and D.C. Streit
    A 100 GHz Monolithic Cascode InAlAs/InGaAs HEMT Oscillator
    IEEE Microwave and Guided Wave Letters, Vol.4, No. 5, May 1994, pp.135-137

  120. Y.J. Chan and D. Pavlidis
    Trap Studies in GaInP/GaAs and AlGaAs HEMTs by Means of Low-Frequency Noise and Transconductance Dispersion Characterizations
    IEEE Transactions on Electron Devices, Vol.41, No.5. May 1994, pp.637-642

  121. P. Marsh, K. Hong, D Pavlidis and G.I. Ng
    Planar Varactor and Mixer Diodes Fabricated using InP-based Materials
    Proceedings of the Fifth THz Symposium, Ann Arbor MI, May 1994

  122. P. Marsh, G.I. Ng, D. Pavlidis and K. Hong
    Air-Bridge Anode Process for High-Performance Planar Schottky Diodes
    Presented at the 1994 US Conference on Gallium Arsenide Manufacturing Technology, Las Vegas NV, May 1994, pp.159-162

  123. S.W. Brown, S.C. Rand, C-H. Hong and D. Pavlidis
    Raman Scattering and X-ray Diffraction Studies of MOCVD Gallium Nitride Grown on (100)Gallium Arsenide
    Proceedings of the Materials Research Society, Symposium D., 1994 Spring Meeting, San Francisco, April 1994

  124. S. Murugkar, R. Merlin, C. Taylor, R. Clarke, S.W. Brown, S.C. Rand, C-H. Hong and D. Pavlidis
    Raman and X-Ray Scattering Studies of Epitaxial GaN
    Proceedings of the 1994 March meeting of the American Physical Society, Pittsburgh, Pa, March 94

  125. K. Hong, D. Pavlidis, Y. Kwon and C-H. Hong
    MOCVD Growth Parameter Study of InP-Based Materials for High-Performance HEMTs
    Proceedings of the 6th International Conferences on Indium Phosphide and Related Materials, Santa Barbara, CA, March 1994, pp. 431-434

  126. P. Marsh, G.I. Ng, D. Pavlidis and K. Hong
    InAlAs/InGaAs Varactor Diodes with THz Cutoff Frequencies Fabricated by Planar Integrated Technology
    Proceedings of the 6th International Conferences on Indium Phosphide and Related Materials, Santa Barbara, CA, March 1994, pp. 595-598

  127. Y. Kwon, D. Pavlidis and T. Brock
    Quasi-1D Channel InAlAs/InGaAs HEMTs with Improved fmax Characteristics
    Proceedings of the 6th International Conferences on Indium Phosphide and Related Materials, Santa Barbara, CA, March 1994, pp. 591-594

  128. G.I. Ng, D. Pavlidis, A. Samelis, D. Pehlke, J.C. Garcia and J.P. Hirtz
    Demonstration of GaInP/GaAs heterojunction Bipolar Transistors with Reduced Toxicity All-Metalorganic Precursors
    Proceedings of the 6th International Conferences on Indium Phosphide and Related Materials, Santa Barbara, CA, March 1994, pp. 399-402

  129. D. Pavlidis
    A Review of Design and Technology Efforts on Heterojunction Bipolar Transistors
    Proceedings of DRS Conference, Charlottesville, VA, December 1993, pp. 461-464

  130. J. Hu, Q.M. Zhang, R.K. Surridge, J.M. Xu and D. Pavlidis
    A New Emitter Design of InGaP/GaAs HBTs for High-frequency Applications
    IEEE Electron Device Letters, Vol.14, No.12, pp. 563-565, Dec.1993

  131. F. Ducroquet, G. Guillot, K. Hong, C-H. Hong, D. Pavlidis and M. Gaunewau
    Deep Level Characterization of LP-MOCVD Grown Al0.48In0.52As
    Proceedings of Mat. Res. Soc. Symp., Vol. 325, pp.235-239, Boston, Ma, November 1993

  132. Y. Kwon, D. Pavlidis, T. Brock and D.C. Streit
    A D-band Monolithic Fundamental Oscillator Using InP/Based HEMTs
    Digest of the IEEE Microwave & Millimeter-wave Symposium, Atlanta, pp.49-52, June 1993, and IEEE Transactions on Microwave Theory and Techniques. Vo.41,No.12,pp.2336-2344, December 1994

  133. M.Y. Frankel, D. Pavlidis and G.A. Mourou
    A Study and Optoelectronic Verification of AlGaAs/GaAs Heterojunction Bipolar Transistor Large-Signal Characteristics
    Journal of Quantum Electronics, Vol. 29, No.11, pp.2799-2804, Nov.93

  134. C-H. Hong, D. Pavlidis, K. Hong, K. Wang and J. Singh
    GaN and AlN OMVPE Growth Using Phenylhydrazine
    1993 International Conference on Silicon Carbide and Related Materials, Washington D.C., November 1993, Institute of Physics Conference Series, No. 137, Chapter 4, pp. 413-415

  135. Y. Kwon, D.Pavlidis, P. Marsh, G.I.Ng, T. Brock and D.C. Streit
    A miniaturized W-band Monolithic Dual-Gate InAlAs/InGaAs HEMT Mixer
    Proceedings of the 1993 IEEE GaAs IC Symposium, San Jose, CA, pp.215-218, October 1993

  136. A.L.Gutierrez-Aitken, P. Bhattacharya, Y.C.Chen, D. Pavlidis and T. Brock
    High Performance Monolithic PIN-MODFET Transimpedance Photoreceiver
    Photonics Technology Letters, Vol. 5, No.8, pp. 913-915, August 1993

  137. D.Pavlidis
    Submicron, High Electron Mobility Transistors: Design, Technology Consideration and Experimental Characteristics
    Proceedings of the XXIVth General Assembly of the International Union of Radio Science, Kyoto, Japan, D-32, August 1993

  138. A.L.Gutierrez-Aitken, P.Bhattacharya, Y.C.Chen, D.Pavlidis and T.Brock
    High Performance Monolithically Integrated PIN-MODFET Transimpedance Photoreceivers
    Proceedings of the 14th Biennial IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, pp. 375-382, August 1993

  139. D.R.Pehlke and D.Pavlidis
    New Analytic Determination of fT, Fmax and the Frequency Dependence of Current Gain and Power Gain in HBTs
    Proceedings of the 14th Biennial IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, pp. 75-82, August 1993

  140. D.Pavlidis
    Material Related Issues and Their Characterization in View of III-V Heterojunction Device Optimization
    Materials Science and Engineering B20, (1993), pp. 1-8, June 1993

  141. J.Kim, J.Son, S.Wakana, J.Nees, J.Whitaker, Y.Kwon and D.Pavlidis
    Time-Domain Network Analysis of MM-Wave Circuits Based on a Photoconductive Probe Sampling Technique
    Digest of the IEEE MTT-S International Microwave Symposium, Atlanta, pp. 1359-1362, June 1993

  142. M.N.Tutt, R.Menozzi and D.Pavlidis
    Characterization of MESFET and MODFET Microwave Noise Properties Utilizing Drain Noise Current
    Digest of the IEEE MTT-S International Microwave Symposium, Atlanta, pp. 1099-1102, June 1993

  143. D.Pavlidis
    Current Status of InP-based Integrated Technology for Microwave and Optoelectronic Applications
    Digest of the 17th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Parma, Italy, pp.19, June 1993

  144. D. Pavlidis
    Recent Developments on High-Frequency Microelectronics Using Compound Semiconductors
    Proceedings of the 25?me Anniversaire du LAAS-CNRS, University of Toulouse, France, pp. 245-254, May 1993

  145. M.N. Tutt and D. Pavlidis
    Accuracy and Repeatability Issues of Different Noise Measurement Techniques for On-Wafer Noise Parameter Determination
    Technical Digest of U.S. Gallium-Arsenide Manufacturing Technology Conference, Atlanta, pp. 214-217, May 1993

  146. G.I. Ng, Y-J. Chan, D. Pavlidis, Y. Kwon. T. Brock and J.M. Kuo
    A New Pseudomorphic In0.2Ga0.8As HEMT using Al0.52n0.48P as Barrier Layer
    Proceedings of the 5th International Indium Phosphide and Related Materials Conference, Paris, France, pp. 505-508, April 1993

  147. Y. Kwon, D. Pavlidis, T. Brock, G.I. Ng, K.L. Tan. J.R. Velebir, and D.C. Streit
    Submicron Pseudomorphic Double Heterojunction InAlAs/In0.7Ga0.3As HEMTs with High Cut-off and Current-Drive Capability
    Proceedings of the 5th International Indium Phosphide and Related Materials Conference, Paris, France, pp. 465-468, April 1993

  148. H-F. Chau, D. Pavlidis, G.I. Ng, K. Tomizawa, J.I. Davies, G. Clarke and P.K.-Rees
    Improved Breakdown-Speed Tradeoff of InP/InGaAs Single Heterojunction Bipolar Transistor Using a Novel p-- n- Collector Structure
    Proceedings of the 5th International Indium Phosphide and Related Materials Conference, Paris, France, pp. 25-28, April 1993

  149. H-F. Chau, D. Pavlidis and T. Brock
    RIE-Induced Damage Studies and Application to Self-Aligned InP/InGaAs HBT Technology
    Journal of Vacuum Science & Technology B, 11(2), pp. 187-194, March/April 1993

  150. J.M. Kuo, Y-J. Chan and D. Pavlidis
    Modulation-Doped Al0.52In0.48P/In0.2Ga0.8As Field-Effect Transistors
    Journal of Applied Physics, Vol. 62, No. 10, pp. 1105-1107, March 1993

  151. P. Marsh, D. Pavlidis and M. Tutt
    Low Frequency Noise Characteristics of GaAs Schottky Diodes Fabricated by -In-Situ Electrochemical Process and Comparison to Evaporation Process
    Proceedings of the 4th International Symposium on Space Terahertz Technology, Los Angeles, Ca., March 1993, pp.404-414

  152. Y. Kwon, D. Pavlidis, P. Marsh and G.I. Ng
    Experimental Characteristics and Performance Analysis of Monolithic InP-Based HEMT Mixers at W-Band
    IEEE Transactions on Microwave Theory & Techniques, Vol. 41, No.1, pp. 1-8, January 1993

  153. H-F. Chau, D. Pavlidis, J. Hu and K. Tomizawa
    Breakdown-Speed Considerations in InP/InGaAs Single and Double Heterostructure Bipolar Transistors
    IEEE Transactions on Electron Devices, Vol. 40, No. 1, pp. 2-8, January 1993

  154. D.R. Pehlke and D. Pavlidis
    Evaluation of the Factors Determining HBT High-Frequency Performance by-Direct Analysis of S-Parameter Data
    Transactions on Microwave Theory and Techniques, Vol. 40, No. 12, pp. 2367-2373, December 1992

  155. A. Samelis and D. Pavlidis
    Mechanisms Determining Third Order Intermodulation Distortion in AlGaAs/GaAs Heterojunction Bipolar Transistors
    IEEE Transactions on Microwave Theory and Techniques, Vol. 40, No.12, pp. 2374-2380, December 1992

  156. H-F. Chau, J. Hu, D. Pavlidis and K. Tomizawa
    Breakdown-Speed Considerations in AlGaAs/GaAs Heterojunction Bipolar Transistors with Special Collector Designs
    IEEE Transactions on Electron Devices, Vol. 39, No. 12, pp. 2711-2719, December 1992

  157. Y-J. Chan and D. Pavlidis
    InAlAs/InGaAs E/D-mode HIGFET Inverters
    Proceedings of the International Electron Devices and Materials Symposium, Taipei, Taiwan, pp. 535-538, November 1992

  158. Y-J. Chan, D. Pavlidis, J-M. Kuo and J-H. Hwang
    Pseudomorphic Ga0.51In0.49P/In0.2Ga0.8 HEMTs Grown by Gas-Source MBE
    Proceedings of the International Electron Devices and Materials Symposium, Taipei, Taiwan, pp. 251-254, November 1992

  159. Y. Kwon, D. Pavlidis, P. Marsh, G.I. Ng and T. Brock
    A Planar Heterostructure Diode W-band Mixer Using Monolithic Balanced Integrated Approach on InP
    Technical Digest of the 14th Annual IEEE GaAs Symposium, Miami, Florida, pp.-67-70, October 1992

  160. Y. Kwon, D. Pavlidis, P. Marsh, G.I. Ng, T. Brock, G.O. Munns and G.I.-Haddad
    A Fully Integrated Monolithic D-band Oscillator-Doubler Chain Using InP-Based HEMTs
    Technical Digest of the 14th Annual IEEE GaAs IC Symposium, Miami, Florida, pp. 51-54, October 1992

  161. J. Kim, Y-J. Chan, S. Williamson, J. Nees, S-I. Wakama, J. Whitaker, D.Pavlidis
    A Novel High-Impedance Photoconductive Sampling Probe for Ultra-High Speed Circuit Characterization
    Technical Digest of the 14th Annual IEEE GaAs IC Symposium, Miami, Florida, pp. 19-22, October 1992

  162. Y-J. Chan and D. Pavlidis
    C+Ar Co-Implantation for High Activity/Low Diffusion Ohmic Contacts in InAlAs/InxGa1-xAs (x=0.53, 0.65) HIGFETs
    Presented at 19th International Symposium on GaAs and Related Compounds, Karuizawa, Japan, September 1992

  163. D. Pavlidis
    Current Status of Heterojunction Bipolar and High-Electron Mobility Transistor Technologies
    Proceedings of the 22nd European Solid State Device Research Conference-(ESSDERC), Leuven, Belgium, pp. 305-312, September 1992

  164. G.O. Munns, M.E. Sherwin, Y. Kwon, T. Brock, W.L. Chen, D. Pavlidis and G.I. Haddad
    Parametric Investigation of InGaAs/InAlAs HEMTs Grown by CBE
    Presented at 7th International MBE Conference, Stuttgart, Germany, August 1992 Journal of Crystal Growth 127, pp. 25-28, 1993

  165. H-F. Chau and D. Pavlidis
    A Physics-Based Fitting and Extrapolation Method for Measured Impact-Ionization Coefficients in III-V Semiconductors
    Journal of Applied Physics}, 72(2), pp. 531-538, July 1992

  166. A. Samelis and D. Pavlidis
    Analysis of Third Order Intermodulation Distortion Mechanisms in AlGaAs/GaAs Heterojunction Bipolar Transistors
    IEEE MTT-S International Microwave Symposium Digest, Albuquerque, pp. 1587-1590, June 1992

  167. D.R. Pehlke and D. Pavlidis
    Direct Calculation of the HBT Equivalent Circuit From Measured S-Parameters
    IEEE MTT-S International Microwave Symposium Digest, Albuquerque, pp. 735-738, June 1992

  168. M. Tutt, D. Pavlidis, A. Khatizabdeh and B. Bayraktaroglu
    Investigation of HBT Oscillator Noise Through l/f Noise and Noise Upconversion Studies
    IEEE MTT-S International Microwave Symposium Digest, Albuquerque, pp. 727-730, June 1992

  169. G.O. Munns, M.E. Sherwin, T. Brock, G.I. Haddad, Y. Kwon, G.I. Ng and D. Pavlidis
    InAlAs/InGaAs/InP Submicron HEMTs Grown by CBE
    3rd International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Oxford, U.K. September 1991 Journal of Crystal Growth, 120, pp. 184-188, June 1992

  170. J. Hu, D. Pavlidis and K. Tomizawa
    Monte Carlo Studies of the Effect of Emitter Junction Grading on the Electron Transport in InAlAs/InGaAs Heterojunction Bipolar Transistors
    IEEE Transactions on Electron Devices, Vol. 39, No. 6, pp. 1273-1281, June 1992

  171. D. Pavlidis
    Material Related Issues and Their Characterization in View of III-V Heterojunction Device Optimization
    Programme and Abstracts of the 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, (EXMATEC'92), Session 1(1), May 1992

  172. D. Pavlidis, H-F. Chau, J. Hu and K. Tomizawa
    Evaluation of Speed-Breakdown Trade-offs in InP/InGaAs Heterojunction Bipolar Transistors
    Digest of the 16th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Ulm, Germany, Session E(8), May 1992

  173. Y. Kwon, D. Pavlidis, P, Marsh, G.I. Ng and T. Brock
    W-Band Monolithic Balanced Mixer Using InP-Based Heterostructure Diodes
    Proceedings of the MMIC Space \& Ground Applications Symposium, pp. 83-91, April 1992

  174. Y. Kwon, T. Brock, G.I. Ng, D. Pavlidis, G.O. Munns, M. E. Sherwin and G.I. Haddad
    Fmax-Enhancement in CBE-Grown InAlAs/InGaAs HEMTs Using Novel Self-Aligned Offset-Gate Technology
    Proceedings of the 4th Annual InP and Related Materials Conference, Newport, Rhode Island, pp. 360-363, April 1992

  175. G.I. Ng, D. Pavlidis, Y. Kwon, T. Brock, J.I. Davies, G. Clarke and P.K. Rees
    0.1mm MOVPE Grown InAlAs/InGaAs HEMTs with Above 150GHz Operation Capability
    Proceedings of the 4th Annual InP and Related Materials Conference, Newport, Rhode Island, pp. 18-21, April 1992

  176. H-F. Chau, D. Pavlidis, J. Hu and K. Tomizawa
    Analysis of InP/InGaAs Single and Double Heterostructure Bipolar Transistors for Simultaneous High Speed and High Breakdown Operations
    Proceedings of the 4th Annual InP and Related Materials Conference, Newport, Rhode Island, pp. 410-413, April 1992

  177. Y-J. Chan and D. Pavlidis
    High Performance E/D-Mode InAlAs/InGaAs HIGFET Technology and Integrated Logic Functions
    Proceedings of the 4th Annual InP and Related Materials Conference, Newport, Rhode Island, pp. 489-502, April 1992

  178. M.N. Tutt, D. Pavlidis and H-F. Chau
    l/f Noise Characteristics of InP/InGaAs Heterojunction Bipolar Transistors
    Proceedings of the 4th Annual InP and Related Materials Conference, Newport, Rhode Island, pp. 364-367, April 1992

  179. Y. Kwon and D. Pavlidis
    A Study of Subterahertz HEMT Monolithic Oscillators
    Proceedings of the 3rd International Symposium on Space Terahertz Technology, pp. 58-72, March 1992

  180. M.Y. Frankel and D. Pavlidis
    An Analysis of the Large-signal Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors
    IEEE Transactions on Microwave Theory and Techniques}, Vol. 40, No. 3, pp. 465-474, March 1992

  181. Y-J. Chan and D. Pavlidis
    Single and Dual P-Doped Channel In0.52Al0.48As/InxGa1-xAs (x=0.53, 0.65) FETs and the Role of Doping
    IEEE Transactions on Electron Devices}, Vol. 39, No. 3, pp. 466-472, March 1992

  182. G.I. Ng, D. Pavlidis, M. Tutt, M. Weiss and P. Marsh
    Low-Frequency Noise Characteristics of Lattice-Matched (x = 0.53) and Strained (x 0.53) In0.52Al0.48As/InxGa1-xAs HEMTs
    IEEE Transactions on Electron Devices}, Vol. 39, No. 3, pp. 523-532, March 1992

  183. Y. Kwon, D. Pavlidis and M.N. Tutt
    An Evaluation of HEMT Potential for Millimeter-Wave Signal Sources Using Interpolation and Harmonic Balance Techniques
    IEEE Microwave and Guided Wave Letters}, Vol. 1, No. 12, pp. 365-367, December 1991

  184. Y-J. Chan and D. Pavlidis
    Low-Frequency Noise and Frequency Dispersion Characteristics of GaInP/GaAs and AlGaAs HEMTS
    Proceedings of the 1991 International Semiconductor Device Research Symposium, Charlottesville, Virginia, pp. 677-680, December 1991

  185. D. Pavlidis
    Advances in Heterostructure Field Effect Transistors and Their Integration for Millimeter-Wave Applications
    Proceedings of the 1991 International Semiconductor Device Research Symposium, Charlottesville, Virginia, pp. 653-657, December 1991

  186. Y. Kwon, G.I. Ng, D. Pavlidis, R. Lai, T. Brock, J. Castagne and N.T. Linh
    High Efficiency Monolithic Ka-Band Oscillators Using InAlAs/InGaAs HEMTs
    Technical Digest of the 1991 IEEE GaAs IC Symposium, Monterey, California, pp. 263-266, October 1991

  187. Y. Kwon, D. Pavlidis, P. Marsh, M. Tutt, G.I. Ng and T. Brock
    180GHz InAlAs/InGaAs HEMT Monolithic Integrated Frequency Doubler
    Technical Digest of the 1991 IEEE GaAs IC Symposium, Monterey, California, pp. 165-168, October 1991

  188. Y-J. Chan, D. Pavlidis and T. Brock
    InAlAs/InGaAs HIGFETs Using Novel 0.2mm Self-Aligned T-gate Technology
    Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds, Seattle, pp. 275-280, September 1991

  189. M. Tutt, D. Pavlidis, D. Pehlke, R. Plana and J. Graffeuil
    l/f Noise in AlGaAs/GaAs HBTs Using Ultrasensitive Characterization Techniques for Identifying Noise Mechanisms
    Proceedings of the 18th International Symposium on Gallium Arsenide and Related Compounds, Seattle, pp. 317-322, September 1991

  190. Y-J. Chan and D. Pavlidis
    In0.52Al0.48As/InxGa1-xAs(0.53?x?0.7) Lattice Matched and Strained Heterostructure Insulated Gate FETs
    IEEE Transactions on Electron Devices}, Vol. 38, No. 9, pp. 1999-2005, September 1991

  191. Y. Kwon and D. Pavlidis
    Large Signal Analysis and Experimental Characteristics of Monolithic InP-Based W-Band HEMT Oscillators
    Proceedings of the 21st European Microwave Conference, Stuttgart, Germany, pp. 161-166, September 1991

  192. Y. Kwon, M. Tutt, G.I. Ng, D. Pavlidis. T. Brock, J. Oh, J. Castagne and N.T. Linh
    Gate-Recess and Device Geometry Impact on the Microwave Performance and Noise Properties of 0.1mm InAlAs/InGaAs HEMTs
    Digest of the 13th Biennial IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, New York, p. 141-150, August 1991

  193. J. Hu, H-F. Chau, D. Pavlidis, K. Tomizawa and P. Marsh
    Control of InP/InGaAs Heterojunction Bipolar Transistor Performance Through The Use of Undoped Collectors
    Digest of the 13th Biennial IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, New York, p. 104-113, August 1991

  194. Y-J. Chan, D. Pavlidis and G.I. Ng
    The Influence of Gate-Feeder/Mesa-Edge Contacting on Sidegating Effects in In0.52Al0.48As/In0.53Ga0.47As Heterostructure FETs
    IEEE Electron Device Letters, Vol.12, No. 7, pp. 360-362, July 1991

  195. Y. Zebda, R. Lai, P.K. Bhattacharya D. Pavlidis, P. Berger and T. Brock
    Monolithically Integrated InP-Based Front-End Photoreceivers
    IEEE Transactions on Electron Devices, Vol. 38, No.6, pp. 1324-1333, June 1991

  196. M.N. Tutt, D. Pavlidis and C. Tsironis
    Automated On-Wafer Noise and Load Pull Characterization Using Precision Computer Controlled Electromechanical Tuners
    Proceedings of the 37th Conference of the Automatic RF Techniques Group, Boston, June 1991

  197. M.Y. Frankel and D. Pavlidis
    Large Signal Modeling and Study of Power Saturation Mechanisms in Heterojunction Bipolar Transistors
    IEEE MTT-S International Microwave Symposium Digest, Boston, June 1991, pp. 127-130

  198. R. Clarke, W. Dos Passos, Y-J. Chan and D. Pavlidis
    Enhanced Annealing Kinetics in Ion-Implanted InxAl1-xAs Studied by X-ray Diffractometry
    Applied Physics Letters, Vol. 58, No.20, May 1991, pp. 2267-2269

  199. D. Pavlidis, Y. Kwon and P. Marsh
    InGaAs/InAlAs HEMT Monolithic Integrated Circuit for Frequency Doubling to 180GHz
    Digest of the 15th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Ulm, Germany, May 1991, Session F(10)

  200. D. Pavlidis, J. Hu and K. Tomizawa
    Fundamental Design and Technology Aspects Impacting the Performance of InP-Based HBTs
    Digest of the 15th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Ulm, Germany, May 1991, Session D(5)

  201. G.I. Ng and D. Pavlidis
    Frequency Dependent Characteristics and Trap Studies of Lattice-Matched (x=0.53) and Strained (x0.53) In0.52Al0.48As/InxGa1-xAs HEMTs
    IEEE Transactions on Electron Devices, Vol. 38, No. 4, April 1991, pp. 862-870

  202. D.R. Pehlke and D. Pavlidis
    Critical Issues in Process Technology for High-Speed Self-Aligned GaAs/AlGaAs Heterojunction Bipolar Transistors
    Digest of the GaAs MANTECH Conference, Reno, Nevada, April 1991, pp. 93-96

  203. R. Lai, P.K. Bhattacharya and D. Pavlidis
    Monolithically Integrated In0.53Ga0.47As/In0.52Al0.48As/InP Photoreceivers with Submicron Devices
    Conference Digest of the 3rd International InP Conference, Cardiff, Wales, April 1991, p. 115

  204. Y-J. Chan and D. Pavlidis
    InAlAs/InxGa1-xAs HIGFETs (x?0.53) for E/D FET Logic Applications
    Conference Digest of the 3rd International InP Conference, Cardiff, Wales, April 1991, p. 70

  205. M. Tutt, G.I. Ng, D. Pavlidis and J. Mansfield
    Reliability Issues of InAlAs/InGaAs High-Electron-Mobility Transistors
    Conference Digest of the 3rd International InP Conference, Cardiff, Wales, April 1991, p. 101

  206. D. Pavlidis
    Possibilites des nouvelles filieres de composants e heterostructures pour ondes millimetriques
    Resumes des Conferences, 7emes Journees Nationales Microondes, Grenoble, France, March 1991, pp. 91,92

  207. M. Razeghi, F. Mones, P. Maurel, Y-J. Chan and D. Pavlidis
    Ga0.51In0.49P/GaxIn1-xAs Lattice-Matched (x=1) and Strained (x=0.85) Two-Dimensional Electron Gas Field-Effect Transistors
    Semiconductor Science and Technology, Vol. 6, No. 2, pp. 103-107, February 1991

  208. K. Hong and D. Pavlidis
    Self-Consistent Analysis of the Lattice-Matched Pseudomorphic Quantum Well Emission Transistors
    Journal of Applied Physics, Vol. 69(4), February 15 1991, pp. 2662-2666

  209. R. Lai, P.K. Bhattacharya, D. Pavlidis and T. Brock
    Monolithically Integrated Planar Front-End Photoreceivers with 0.25µm Gate Pseudomorphic In0.50Ga0.40As/InP Modulation-Doped Field-Effect Transistors
    Electronics Letters, Vol. 27, No. 4, pp. 364-366, February 1991

  210. Y. Kwon, D. Pavlidis, P. Marsh, M. Tutt, G.I. Ng and T. Brock
    90-180GHz Heterostructure Monolithic Integrated Doubler
    Proceedings of the 2nd International Symposium on Space Terahertz Technology, Pasadena, pp. 238-254, February, 1991

  211. H-F. Chau, D. Pavlidis and K. Tomizawa
    Theoretical Analysis of HEMT Breakdown Dependence on Device Design Parameters
    IEEE Transactions on Electron Devices, Vol. 138, No. 2, pp./ 213-221, February 1991

  212. Y. Kwon and D. Pavlidis
    Diode Multipliers for Submillimeter-Wave InAlAs/InGaAs Heterostructure Monolithic Integrated Circuits
    Microwave & Optical Technology Letters, Vol. 4, No. 1, pp. 38-43, January 1991

  213. J. Hu, D. Pavlidis and K. Tomizawa
    Transient and Steady-State Monte-Carlo Simulation of the Effects of Junction Gradings on Carrier Transport in InAlAs/InGaAs HBTs
    IEEE IEDM Technical Digest 1990, San Francisco, pp. 439-442, December 1990

  214. R. Clarke, W. Dos Passos, Y-J. Chan, D. Pavlidis, W. Lowe, B. Rodricks and C. Brizard
    Real Time X-Ray Studies of Semiconductor Device Structures
    Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Proceedings of SPIE Conference, Aachen, Vol. 1361, pp. 2-12, October 1990

  215. D. Pavlidis
    Millimeter-Wave and Optoelectronic Applications of Heterostructure Integrated Circuits
    Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Proceedings of SPIE Conference, Aachen, Vol. 1362, pp. 450-466, October 1990

  216. Y. Kwon, D. Pavlidis, G.I. Ng, M. Tutt and T. Brock
    W-Band Monolithic Mixer Using InAlAs/InGaAs HEMTs
    Technical Digest of the IEEE GaAs IC Symposium, New Orleans, pp. 181-184, October 1990

  217. Y-J. Chan, D. Pavlidis, M. Razeghi and F. Omnes
    Ga0.51In0.49P/GaAs HEMTs Exhibiting Good Electrical Performance at Cryogenic Temperatures
    IEEE Transactions on Electron Devices, Vol. 37, No. 10, October 1990, pp. 2141-47

  218. M. Weiss, D. Pavlidis and G.I. Ng
    HEMT Control Circuits for Monolithic InP Applications
    Proceedings of the 20th European Microwave Conference, Budapest, Hungary, pp. 429-434, September 1990

  219. M. Weiss, G.I. Ng and D. Pavlidis
    InP Based Monolithic Integrated HEMT Amplifiers and Their Material Sensitivity
    Proceedings of the 20th European Microwave Conference, Budapest, Hungary, pp. 959-964, September 1990

  220. Y. Kwon, D. Pavlidis, M. Tutt, G.I. Ng, R. Lai and T. Brock
    W-Band Monolithic Oscillator Using InAlAs/InGaAs HEMT
    Electronics Letters, Vol. 26, No. 18, pp. 1425-26, August 1990

  221. R. Lai, P.R. Berger, P.K. Bhattacharya, Y. Zebda, W-Q. Li and D. Pavlidis
    Monolithically Integrated In0.53Ga0.47/In0.52Al0.48As Front-End Photoreceivers Realized by Molecular Beam Epitaxy and Regrowth Techniques
    Presented at the IEEE/LEOS Topical Meeting on Integrated Optoelectronics, Monterey, California, August 1990

  222. Y. Zebda, P.K. Bhattacharya, D. Pavlidis and J. Harrang
    Performance Characteristics of In0.6Ga0.4As/In0.52Al0.48 MODFET Monolithically Integrated with In0.53Ga0.47As PIN Photodiodes
    Journal of Applied Physics, Vol. 68(4), August 15, 1990, pp. 1918-20

  223. J. Pamulapati, R. Lai, G.I. Ng, Y.C. Chen, P.R. Berger, P.K. Bhattacharya, J. Singh and D. Pavlidis
    The Relation of the Performance Characteristics of Pseudomorphic In0.53+XGa0.47-XAs/In0.52Al0.48 As(0? X ? 0.32) Modulation Doped Field Effect Transistors to Molecular Beam Epitaxial Growth Modes
    Journal of Applied Physics, Vol. 68(1), July 1, 1990, pp. 347-350

  224. D. Pavlidis, J. Hu and K. Tomizawa
    Design of InAlAs/InGaAs Heterojunction Bipolar Transistors for Optimum Speed Performance
    14th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 90), Cardiff, U.K., May 1990

  225. D. Pavlidis, Y. Kwon, G.I. Ng and M. Tutt
    94GHz Heterostructure Mixer MMIC Using Submicrometer InAlAs/InGaAs HEMTs
    14th European Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 90), Cardiff, U.K., May 1990

  226. G.I. Ng, R. Lai, D. Pavlidis, J. Pamulapati, P.K. Bhattacharya and K. Studer-Rabeler
    Submicron Double Heterojunction Strained InAlAs/InGaAs HEMTs: An Experimental Study of DC and Microwave Properties
    Proceedings of 2nd International Conference on Indium Phosphide and Related Materials, Denver, Colorado, pp. 424-427, April 1990

  227. Y-J. Chan and D. Pavlidis
    P-Type Doped Channel FETs Using Strained and Lattice Matched InAlAs/InGaAs Heterostructures
    Proceedings of 2nd International Conference on Indium Phosphide and Related Materials, Denver, Colorado, pp. 7-10, April 1990

  228. K. Tomizawa and D. Pavlidis
    Transport Equation Approach for Heterojunction Bipolar Transistors
    IEEE Transactions on Electron Devices, Vol. 37, No. 3, pp. 519-529, March 1990

  229. M. Razeghi, F. Omnes, M. Defour, P. Maurel, J. Hu, E. Woelk and D. Pavlidis
    High Performance GaAs/GaInP Heterostructure Bipolar Transistors Grown by Low-Pressure Metal-Organic Chemical Vapour Deposition
    Semiconductor Science & Technology, Vol. 5, No. 3, pp. 278-280, March 1990

  230. M. Razeghi, F. Omnes, M. Defour, P. Maurel, P. Bove, Y-J. Chan and D. Pavlidis
    The First Fabrication of n- and p-type Ga0.49In0.51P/Ga(In) Lattice Matched and Strained HIGFET Structures Grown by MOCVD
    Semiconductor Science & Technology, Vol. 5, No. 3, pp. 274-277, March 1990

  231. G.I. Ng, Y. Kwon and D. Pavlidis
    Submicrometer Devices and Monolithic Functions Using InAlAs/InGaAs Heterostructures
    Proceedings of the 1st International Symposium on Space Terahertz Technology, Ann Arbor, Michigan, pp. 150-168, March 1990

  232. M. Weiss, G.I. Ng and D. Pavlidis
    A New Generation MMIC Monolithic Amplifier Using InGaAs/InAlAs HEMTs
    Electronics Letters, Vol. 26, No. 4, pp. 264-266, February 1990

  233. H-F. Chau, D. Pavlidis, J-L. Cazaux and J. Graffeuil
    Studies of the DC, Low-Frequency and Microwave Characteristics of Uniform and Step-Doped GaAs/AlGaAs HEMTs
    IEEE Transactions on Electron Devices, Vol. 36, No. 10, pp. 2288-2298, October 1989

  234. G.I. Ng, D. Pavlidis, M. Jaffe, J. Singh and H-F. Chau
    Design and Experimental Characteristics of Strained In0.52Al0.48As/ InxGa1-xAs(x0.53) HEMTs
    IEEE Transactions on Electron Devices, Vol. 36, No. 10, pp. 2249-2259, October 1989

  235. J. Hu, K. Tomizawa and D. Pavlidis
    Transient Monte Carlo Analysis and Application to Heterojunction Bipolar Transistor Switching
    IEEE Transactions on Electron Devices., Vol. 36, No. 10, pp. 2138-2145, October 1989

  236. Y-J. Chan, D. Pavlidis, M. Razeghi, F. Omnes and M. Defour
    Pseudomorphic Ga0.51In0.49P/In0.15Ga0.85As/GaAs HIGFETs
    16th International Symposium on GaAs and Related Compounds, Karuizawa, Japan, No. 106, Chapter 9, pp. 619-624, September 1989

  237. Y-J. Chan, D. Pavlidis, M. Razeghi and F. Omnes
    DC and Microwave Characteristics of GaInP/GaAs HEMTs Suitable for Cryogenic Operation
    16th International Symposium on GaAs and Related Compounds, Karuizawa, Japan, No. 106, Chapter 12, p. 891, September 1989

  238. M. Tutt, D. Pavlidis and B. Bayraktaroglu
    An Assessment of Noise Sources and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors
    16th International Symposium on GaAs and Related Compounds, Karuizawa, Japan, No. 106, Chapter 9, pp. 701-706, September 1989

  239. W.Q. Li, Y. Zebda, P. K. Bhattacharya, D. Pavlidis, J. Oh and J. Pamulapati
    Monolithically Integrated GaAs and InP Based Front-End Photoreceiver
    Proceedings of IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, New York, pp. 353-361, August 1989

  240. G. I. Ng, A. Reynoso, J. E. Oh, D. Pavlidis, J. Graffeuil, P. K. Bhattacharya, M. Weiss and K. Moore
    Low Frequency Properties of Lattice Matched and Strained InGaAs/InAlAs HEMTs
    Proceedings of IEEE/Cornell University Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, New York, pp. 73-82, August 1989

  241. G.I.Ng, D. Pavlidis, M. Tutt, J. Oh and P. K. Bhattacharya
    Improved Strained HEMT Device Characteristics using Double Heterojunction In0.05Ga0.35As/In0.52Al0.48As Design:
    IEEE Electron Device Letters, Vol. 10, No.3, pp. 114-116, March 1989

  242. D. Pavlidis, J. Hu, K. Tomizawa and D. Pehlke
    Fast Switching Designing of Heterojunction Bipolar Transistors
    13th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 89) Cabourg, France, May 1989

  243. D. Pavlidis and G.I. Ng
    Improved Gain Designs of Strained InGaAs/InAlAs HEMTs
    13th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 89), Cabourg, France, May 1989

  244. D. Pavlidis and M. Tutt
    A Novel Course on Microwave Monolithic Integrated Circuit (MMIC) Theory and Experiment
    IEEE Transactions on Education, Vol. 32, No. 2, pp. 73-84, May 1989

  245. D.Pavlidis
    Microwave and Millimeter-Wave Monolithic Integrated Circuits
    Invited Paper, Electro-89 Conference, Professional Program Session Record, New York, New York, pp. 3/3.1-3/3.8, April 1989

  246. J. Hu, K. Tomizawa and D. Pavlidis
    Monte Carlo Approach to Transient Analysis of HBTs with different collector Designs
    IEEE Electron Device Letters, Vol. 10, No. 12 pp. 55-57, February 1989

  247. D. Pavlidis, G. I. Ng and M. Weiss
    Gain and Noise Characteristics of InAlAs/InGaAs Strained HEMTs
    InP Based Microwave/Millimeter-Wave Technology Workshop, NOSC, San Diego, California, USA, January 25-26, 1989

  248. M. Tutt, D. Pavlidis, G. I. Ng, M. Weiss and J. L. Cazaux
    Monolithic Integrated Circuit Applications of InGaAs/InAlAs HEMTs
    1988 IEEE GaAs Integrated Circuit Symposium Digest, Nashville, Tennessee USA, pp. 293-296, November 1988

  249. Y. J. Chan, D. Pavlidis, M. Razeghi, M. Jaffe and J. Singh
    Novel P-channel Ga0.51In0.49P/InxGa1-xAs/GaAs Strained (x=0.1) and Lattice Matched (x=0) HEMTs
    International 15th GaAs and Related Compounds Conference, Institute of Physics Conference Series, Atlanta, Georgia USA, No. 96. chapter 7, pp. 465-570, September 1988

  250. G. I. Ng, M. Weiss, D. Pavlidis, M. Tutt, P. Bhattacharya and C. Y. Chen
    Microwave Properties of Strained In0.53+xGa0.47-xAs/In0.52Al0.48As HEMTs
    International 15th GaAs and Related Compounds Conference, Institute of Physics Conference Series, Atlanta, Georgia USA, No. 96, chapter 7, pp. 459-464, September 1988

  251. G.I. Ng, W-P. Hong, D. Pavlidis, M. Tutt and P.K. Bhattacharya
    Characteristics of Strained In0.65Ga0.35As/In0.52Al0.48As HEMT with Optimized Transport Parameters
    IEEE Electron Device Letters, Vol. 9, No. 9, pp. 439-441, September 1988

  252. J. L. Cazaux, D. Pavlidis, G.I. Ng and M. Tutt
    The Use of Double Heterojunction Diodes in Monolithic Phase Shifters
    Proceedings of the 18th European Microwave Conference, Stockholm, Sweden, pp. 1005-1010, September 1988

  253. J.L. Cazaux, D. Pavlidis, G.I. Ng and M. Tutt
    A HEMT Monolithic Double Channel Attenuator with Broadband Characteristics and Wide dynamic Range
    Proceedings of the 18th European Microwave Conference, Stockholm, Sweden, pp. 999-1004, September 1988

  254. W-P. Hong, G. I. Ng, P. K. Bhattacharya, D. Pavlidis and S. Willing
    Low and High Field Transport Properties of Pseudomorphic InxGa1-xAs/In0.52Al0.48As(0.53? x ?0.65) Modulation-Doped Heterostructures
    Journal of Applied Physics, Vol. 64(4), pp. 1945-1949, August 1988

  255. M. Weiss and D. Pavlidis
    An Investigation of Power Characteristics and Saturation Mechanisms in HEMTs and MESFETs
    IEEE Transactions on Electron Devices, Vol. 35, No. 8, pp. 1197-1206, August 1988

  256. J. L. Cazaux, G. I. Ng and D. Pavlidis
    An Analytical Approach to the Capacitance Voltage Characteristics of Double Heterojunction HEMTs
    IEEE Transactions on Electron Devices, Vol. 35, No. 8, pp. 1223-1231, August 1988

  257. Y. Zebda, R. Lipa, M. Tutt, D. Pavlidis, P. K. Bhattacharya, J. Pamulapati and J. E. Oh.
    Theoretical and Experimental Studies of Monolithically Integrated Pseudomorphic InGaAs/AlGaAs MODFET-APD Photoreceivers
    46th Device Research Conference, Boulder, Colorado USA, Paper No. IIB-5, June 1988

  258. G. Pataut and D. Pavlidis
    X-Band Varactor Tuned Monolithic GaAs FET Oscillators
    International Journal of Electronics, Vol. 64, No. 5, pp. 731-751, May 1988

  259. D. Pavlidis and G. I. Ng
    InGaAs/InAlAs HEMTs with Strained Channel for Optimum Microwave Performance
    12th Workshop on Compound Semiconductor Devices and Integrated Circuits, Session 4, Lugano, Switzerland, May 1988

  260. D. Pavlidis, J.L. Cazaux and J. Graffeuil
    The Influence of Ion Implanted Profiles on the Performance of GaAs MESFETs and MMIC Amplifiers
    IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-36, No. 4, pp. 642-652, April 1988

  261. M. Weiss and D. Pavlidis
    The Influence of Device Physical Parameters on HEMT Large Signal Characteristics
    IEEE Transactions on Microwave Theory and Techniques, Special Issue on Computer Aided Design, Vol. MTT-36, No. 2, pp. 239-249, February 1988

  262. G.I. Ng, D. Pavlidis, M. Quillec, Y.J. Chan, M. Jaffe and J. Singh
    A Study of the Consequence of Excess In in the Active Channel of InGaAs/InAlAs HEMTS on Device Properties
    Applied Physics Letters, Vol. 52 (9), pp. 728-730, February 1988

  263. D. Pavlidis
    AlGaAs/GaAs and InAlAs/InGaAs HEMT Characteristics and Their Dependence on Material and Device Parameters
    HEMT Symposium Workshop, Fort Monmouth, January 1988

  264. Y. J. Chan, D. Pavlidis, G. I. Ng, M. Jaffe, J. Singh and M. Quillec
    Effect of Channel Strain on the Electrical Characteristics of InGaAs/InAlAs HEMTS
    International Electron Devices Meeting, Technical Digest Washington, DC USA, pp. 427-430, December 1987

  265. Y. Sekiguchi, Y. J. Chan, M. Jaffe, M. Weiss, G. I. Ng, J. Singh, M. Quillec and D. Pavlidis
    Theoretical and Experimental Studies on Lattice Matched and Strained MODFETs
    International 14th GaAs and Related Computer Conference, Institute of Physics Conference Series, Crete, Greece September 1987, Bristol, United Kingdom, pp. 215-218, 1988

  266. M. D. Jaffe, Y. Sekiguchi, J. Singh, Y-J Chan, D. Pavlidis and M. Quillec
    A Study of Charge Control in n- and p- type Lattice Matched and Strained Channel MODFETs with GaAs and InP Substrate
    Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Cornell, pp. 70-79, July 1987

  267. M. Weiss and D. Pavlidis
    A Comparative Study of TEGFET and MESFET Large Signal Characteristics and Saturation Mechanisms
    1987-IEEE MTT-S International Microwave Symposium, Las Vegas, Nevada USA, pp. 553-556, June 1987

  268. D. Pavlidis, M. Weiss and G. Ng
    HEMT Device Considerations for Large Signal Applications
    11th Workshop on Compound Semiconductor Devices and Integrated Circuits, Grainau, West Germany, May 1987

  269. Y. Archambault, D. Pavlidis and J.P. Guet
    GaAs Monolithic Integrated Optical Preamplifier
    IEEE Journal of Lightwave Technology (Joint MTT Special Issue on Microwave Aspects and Applications of GHz/Gbit Technology, Vol. LT-5, No. 3, pp. 355-366, March 1987

  270. D. Pavlidis, G. Ng, H-F. Chau, M. Weiss, J. Hu and W.P. Hong
    Electronic Properties of Power High Electron Mobility Transistors
    Conference on Ballistic Electrons for Transistors, Santa Barbara, California USA, March 1987

  271. M. Weiss and D. Pavlidis
    Power Optimization of GaAs Implanted FETs Based on Large Signal Modeling
    IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-35, No. 2, pp. 175-188, February 1987

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