Ph.D. THESES COMPLETED BY MEMBERS OF THE III-V GROUP

The following is a list of theses completed by members of the III-V Group. All of them profited from collaborations within the university and with other univ ersities or industrial laboratories worldwide.

1. "InP- and GaN-based Devices and MMICs for Signal Control and Generation"
   by Egor Alekseev: 2000
2. "GaInP/GaAs HBTs for High-Frequency High-Power Applications"
   by Jae-Woo Park: 2000
3. "Noise Characterization of Heterojunction Bipolar Transistors"
   by Saeed Mohammadi: 1999
4. "InP-based NPN and PNP Heterojunction Bipolar Transistor Design, Technology, and Characterization for Enhanced High-Frequency Power Amplifications"
   by Don Sawdai: 1999
5. "InGaAs-Based Schottky Diode Technology for Millimeter-THz Receiver Applications"
   by Phil Marsh: 1997
6. "Growth of InP-Based Materials and Heterostructures using MOVPE for High-Frequency Device Applications"
   by Kyu Shik Hong: 1995
   
7. "Large-Signal Characteristics of Heterojunction Bipolar Transistors and Their Relation to Device Parmaters and Peformance"
   by Apostolos Samelis : 1995
   
8. ``Design and Technology of Millimeter-wave InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) and Monolithic Integrated Circuits''
   by Youngwoo Kwon : 1994
9. `` Low and High Frequency Noise Properties of Heterojunction Transistors''
   by Marcel N. Tutt : 1994
   
10. ``Technology and Physical Parameter Extraction Formalisms for the High-Frequency Optimization of Self-Aligned GaAs/AlGaAs Heterojunction Bipolar Transistors''
    by David. R. Pehlke : 1994
    
11. ``Studies of InAlAs/InGaAs and GaInP/GaAs Heterostructure FETs for High Speed Applications''
    by Yi-Jen Chan : 1992
    
12. ``X-ray Studies of Semiconductor Device Structures''
    by Waldemar Dos Passos : 1992
    
13. ``Doping Profiles Studies for HBTs and HEMTs with Improved Breakdown and Speed Characteristics''
    by Hin-Fai Chau : 1992
    
14. ``Design of GaAs- and InP-based Heterojunction Bipolar Transistors for High Speed Performance''
    by Juntao Hu : 1991
    
15. ``Ultrafast Device Characterization"
    by Michael Y. Frankel : 1991
    
16. ``Strained In(0.52)Al(0.48)As/In(0.53)Ga(1-x)(x > 0.53)As High Electron Mobility Transistors (HEMTs) for Microwave/Millimeter-wave Applications''
    by Geok I. Ng : 1990
    

Review of Group Activities

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