Lester F. Eastman


3rd William Gould Dow Distinguished Lecture

“High Technology Electronics Research and Education”

Lester F. Eastman
John L. Given Foundation Professor
Cornell University

Abstract
Compound semiconductors and their heterojunctions, as well as nanofabrication technology, have led to substantial microwave and photonic device innovations and developments, especially at universities. During the past 25 years nanofabrication, and during the past 37 years compound semiconductor material growth, have been substantial components of graduate research and education at Cornell. In addition, substantial interaction with many industries and universities have occurred. A number of other U.S. universities now have nanofabrication facilities and expertise, and in the past two years, countries like Sweden and Germany have constructed these facilities, for example. Graduate students are learning to independently operate sophisticated equipment, and to be innovative in achieving new and better materials and devices. Device quality materials structures, with high purity, composition control, and abrupt heterojunctions, continue to be advanced. Innovation samples having atomic-planar doping, pseudomorphic quantum well lasers for .98 mm pumps for fiber amplifiers and for high speed direct modulation, AlInAs barriers for InP-based HEMT’s, AlGaInP visible lasers, undoped polarization-induced two-dimensional electron gas HEMT of AlGaN/GaN for record microwave power density, 1020/cm3 electrons in Al.8Ga.2N for UV optical sources, and initial epitaxial InN with the proper band gap of ~.8V, have been realized. The experiences of the graduate students in achieving these advances have positioned them for very strong careers in industry and at universities.

Biographical Sketch
Prof. Eastman has conducted research on compound semiconductor materials, high speed devices, and circuits since 1965. In 1977, he joined other Cornell faculty members to found the National Research and Resource Sub Micron Facility at Cornell (now Cornell Nanofabrication Facility). He initiated the Joint Services Electronics Program at Cornell in 1977 and directed it for ten years. He was the IEEE Electron Device Society National Lecturer in 1983. He was a member of the U.S. Government Advisory Group on Electron Devices from 1978-1988, and serves as a consultant for several industries. He is a Fellow of IEEE and APS, a member of the National Academy of Engineering and the Electromagnetics Academy, and was appointed the John L. Given Foundation Professor of Engineering at Cornell in January 1985. In 1991 he was awarded the Welker Medal and Annual Award of the International Symposium on Gallium Arsenide and Related Compounds. He was awarded the Alexander von Humboldt Senior Fellowship in 1994, and the Aldert van der Ziel Award in 1995.