Defense Event

Applications of Semiconductor Nanowires for Nanoelectronics and Nanoelectromechanical Systems

Wayne Y. Fung

Thursday, April 26, 2012
2:00pm - 4:00pm
1005 EECS

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About the Event

The tremendous success of complementary metal-oxide-semiconductor (CMOS) technology over the past five decades now faces an uncertain future as aggressive device scaling continue mount serious challenges. To this end, novel nanoscale materials such as carbon nanotubes, graphene, and semiconductor nanowires have attracted interest owing to their excellent material properties, with the expectation that that such materials may be able to complement or replace CMOS in the future. Here we explore semiconductor nanowires and their technological potential along three trajectories: 1) Growth techniques with an eye toward hybrid nanowire-CMOS systems. Highlights include: a) the growth of Si nanowires using CMOS-compatible Al (instead of Au) as catalyst, while retaining semiconducting behavior; b) the controlled vertical epitaxial growth of Ge nanowires on Si. 2) Prospects for a Ge nanowire-based vertical tunnel field-effect transistor. We demonstrate high performance Esaki diodes using the Si-Ge heterojunction at the interface between a vertical Ge nanowire and a Si substrate, obtaining evidence of a high quality, low-defect tunnel junction. 3) Nanowire-based nanoelectromechanical (NEMS) systems. We demonstrate very-high frequency nanowire-based nanomechanical resonators with electrical actuation/detection and in situ frequency tuning.

Additional Information


Sponsor(s): Wei Lu

Open to: Public