Advances in III-V Heterostructure Devices and Integration for Millimeter-Wave and THz Sensing and Imaging
University of Notre Dame
Wednesday, April 08, 2015|
5:30pm - 7:00pm
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About the Event
The exploration of novel devices and integration technologies, in conjunction with nanometer-scale device geometries enabled by advanced fabrication processing, has the potential to lead to significant improvement in the performance of III-V electronic devices for sensing and imaging applications. In this talk, several device technologies being pursued at the University of Notre Dame will be described. In terms of conventional device scaling, recent advances in scaled GaN-based HEMTs will be presented; experimentally-demonstrated ft’s of over 370 GHz indicate that GaN-based devices are not only attractive for microwave power amplification, but also for millimeter-wave and mixed-signal circuit applications as well. Fundamental studies also reveal signatures of plasma waves in GaN-channel HEMTs, suggesting additional avenues for high-frequency device design and optimization. For millimeter-wave and THz detection and imaging, we have been investigating the use of InAs/AlSb/GaSb heterostructure backward diodes. These devices offer extremely low noise performance, have demonstrated record sensitivity performance, and can be integrated monolithically with antennas for focal plane arrays and to implement higher-level imaging and sensing functionalities such as polarimetric and spectroscopic imaging. An overview of this device technology as well as opportunities and challenges will be presented. Finally, the fabrication and performance of a novel interconnect technology that achieves extremely low loss, compact chip-to-chip interconnects for millimeter-wave and THz system integration will be described.
Patrick Fay is currently a professor in the Department of Electrical Engineering at the University of Notre Dame, Notre Dame, Indiana, USA. He received a Ph.D. in electrical engineering from the University of Illinois at Urbana-Champaign in 1996 after receiving a B.S. in electrical engineering from Notre Dame in 1991. Dr. Fay served as a visiting assistant professor in the Department of Electrical and Computer Engineering at the University of Illinois at Urbana-Champaign in 1996 and 1997, and joined the faculty at the University of Notre Dame in 1997. His research interests include the design, fabrication, and characterization of microwave and millimeter-wave electronic devices and circuits, as well as high-speed optoelectronic devices and optoelectronic integrated circuits for fiber optic telecommunications. His research also includes the development and use of micromachining techniques for the fabrication of microwave components and packaging. His educational initiatives include the development of an advanced undergraduate laboratory course in microwave circuit design and characterization. He was awarded the Department of Electrical Engineering’s IEEE Outstanding Teacher Award in 1998-1999. Prof. Fay is a senior member of the IEEE, and has published 8 book chapters and more than 100 articles in refereed scientific journals.
Contact: Fran Doman
Sponsor(s): MICL, IEEE SEM and IEEE EDS
Faculty Sponsor: MICL
Open to: Public