| Dec 20, 2006 |
Nanoelectronics
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Term: Winter 2007
Course No.: EECS598-004
Credit Hours: 3
Instructor: Wei Lu
Prerequisites: EECS421 or permission by instructor
Course Description:
EECS 598: NanoelectronicsWei LuThis is a graduate level course aimed to provide students a comprehensive understanding on nanoelectronics, and covers both novel MOSFET device structures and emerging research device structures based on the bottom-up paradigm. We plan to fill the gap between the fast pacing research in nanotechnology and the current graduate curricula which focus on conventional CMOS devices. We will begin by first performing an in-depth analysis of the device principles and factors that affect the performance of MOSFET, followed by discussions on the challenges and technological innovations (boosters) that are currently being developed to sustain the historical trend of transistor scaling. Following that, we will carry out a critical survey of emerging research devices that may drive technology beyond CMOS. Topics include transistor device principles and scaling rules, high-k dielectrics, mobility enhancement factors, SOI devices, ballistic and single-electron devices, nanowires and nanotubes, and molecule and spin based devices.Prerequisite: EECS 421 or permission by instructor.Meeting time: MW, 9:00-10:30amLocation: EECS 3427Office: 2417-A EECSEmail: wluee@eecs.umich.eduTextbooks:Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. NingCambridge University Press, 1st edition (October 13, 1998) ISBN: 0521559596Nanoelectronics and Information Technology by Rainer WaserJohn Wiley & Sons 2 edition (April 22, 2005) ISBN: 3527405429 [More Info] |
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