College of Engineering  |  Department of Electrical Engineering and Computer Science  |  ECE Division













Contact Information:
Prof. J. Kanicki
University of Michigan
EECS Department
2307 EECS Bldg.
1301 Beal Ave
Ann Arbor, MI 48109-2122

Tel: (734) 936-0964 (Office)
Tel: (734) 936-0972
(Student office)
Tel: (734) 615-6363
(The Kanicki Lab)
Fax: (734) 615-2843
Email: Kanicki@eecs.umich.edu

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Group Members   |   Alumni   |   Outside Visitors   |   Internships
 
Group Members

 

Group Leader

Jerzy Kanicki

Jerzy Kanicki, Ph.D.
734-936-0964
kanicki@eecs.umich.edu

Jerzy Kanicki received his Ph. D. degree in Sciences (D. Sc.) from the Free University of Brussels (Université Libre de Bruxelles), Brussels, Belgium, in 1982. He subsequently joined the IBM Thomas J. Watson Research Center, Yorktown Heights, New York, as a Research Staff Member working on hydrogenated amorphous silicon devices for the photovoltaic and flat panel display applications. In 1994 he moved from IBM Research Division to the University of Michigan as a Professor in the Department of Electrical Engineering and Computer Science. At the present, his research interests within the Electrical and Computer Engineering (ECE) division of EECS, include organic electronics, thin-film transistors and circuits, and flat panel displays technology including organic light-emitting devices.


Visiting Scholars
Dae Hwan Kim

Dae Hwan Kim
734-355-6860
daehkim@umich.edu
drlife.kim@gmail.com

My research interests are nanoscale CMOS devices and integrated circuits, metal oxide and organic thin-film transistors, biosensors devices, exploratory logic and memory devices, energy-efficient nano-ICs, and Si quantum devices. In specific, my works have been in the characterization, modeling, and circuit design for reliabilities of CMOS devices, thin-film transistors, display, biosensors, and neuromorphic systems. Very recently, I’m focusing mainly on the characterization, modeling and simulation for oxide thin-film transistors.

I received the B.S., M.S., and Ph.D. degrees in electrical engineering from Seoul National University, Seoul, Korea, in 1996, 1998, and 2002, respectively. From 2002 to 2005, I was with Samsung Electronics Company, Ltd., Kyung ki-Do, Korea, where he contributed to the design and development of 92-nm double data rate (DDR) dynamic RAM (DRAM) and 80-nm DDR2 DRAM. In 2005, I joined the School of Electrical Engineering, Kookmin University, Seoul, where I am currently an Associate Professor. Also, now I’m a visiting research scholar at Department of Electrical Engineering and Computer Science, University of Michigan, with Prof. J. Kanicki’s kind hosting.

   
Robert Mroczynski

Robert Mroczynski
734-936-0972
robertpm@umich.edu

My research concerns the technology and characterization of advanced a-IGZO TFT structures. In the first part of work I will be focused on selection of the best dielectric material for application as gate dielectric layer in TFT. High-k dielectric layers fabricated by ALD and sputtering methods will be taken into account. Also PECVD oxides will be fabricated, for the sake of comparison. The extensive electrical characterization of fabricated MOS test structures will be performed (CV, IV and quasi-static measurements). In the second part, we will fabricate a-IGZO TFTs with chosen gate dielectric layer and we will perform reliability and stability investigations.

I received my B.SC., M.SC and Ph.D. degree in Electronics (Microelectronics) in 2002, 2003 and 2008, respectively, from Warsaw University of Technology, Poland, and now I’m Visiting Research Assistant Scientist at Department of Electrical Engineering and Computer Science, University of Michigan, through the Dekaban Scholarship.


Research Fellows
 

 


Graduate Students

Gwanghyeon Baek

Gwanghyeon Baek
734-936-0972
gbaek@umich.edu

I am mainly focusing on developing a pixel circuit and physical design for image sensors with Thin-Film Transistors (TFTs). We hope to achieve high resolution imager having wide dynamic range and small pixel pitch. We extract Spice parameters from fabricated TFTs and develop imager array based on these parameters. I received B.S degree in Physics from Korea University, Seoul, Korea in 2002 and M.S. degree in EE from Seoul National University, Seoul, Korea in 2004. From 2004 to 2007, I was with Samsung Electronics, Giheung, Korea as an engineer.

 

 
Linsen Bie

Linsen Bie
734-604-6268
lbie@umich.edu

My research focuses on amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs). We studied the optical properties of a-IGZO thin film, subgap states (DOS) of a-IGZO, temperature/current stress measurements of a-IGZO TFTs. We hope to develop proper device structure for a-IGZO TFTs to be applied in high performance flat-panel display. I received my B.E degree in EE from Huazhong University of Science & Technology, Wuhan, China in 2011 and I am currently enrolled in the Master degree program.

   
Che-Hung Liu

Che-Hung Liu
(734) 709-4731
chehung@umich.edu

My research project focuses on the half-Corbino hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs), especially its asymmetric electrical properties and application to flat panel displays. During the project, we first fabricated the devices used in the active matrix liquid-crystal display (AM-LCD) and then, with different gate electrode structures, we investigated its asymmetric electrical characteristics under different drain-bias conditions. This type of device structure can significantly reduce the parasitic capacitance allowing to achieve higher performance as a driving or switching device for various flat panel display. I received my B.S. degree in Physics from National Taiwan University (NTU) in 2009, and M.S. degree in Electrical Engineering from the University of Michigan in 2012.

   
Geonwook Yoo

Geonwook Yoo
734-936-0972
gwyoo@umich.edu

My project focuses on demonstrating image sensor on a curved surface with a wide dynamic range and a large field of view (FOV). Specifically, we design, simulate and make layouts of passive and active pixel sensor circuit with thin-film transistor (TFT) using HSPICE and Cadence. We also develop innovative processes needed to fabricate the pixel circuits on a curved surface. In the long term goal, we hope to show an image sensor of million pixels and a wide FOV on a curved surface. I received my B.S. in EE from Korea University, and M.Eng in BME from Cornell University, and I am currently a doctoral candidate in the EECS. I joined the group in August 2007.

   
Rui Zhang

Rui Zhang
Tel: 734-604-9109
ruizh@umich.edu

My research project focuses on development of low cost high efficient thin film solar cells. We are currently modeling, fabricating and measuring single-junction CIGS solar cells. We also are developing more complicated device structures, including multi-junction tandem and mechanically stacked three/four terminals solar cells. In addition, we are interested in the solar cell module level power management systems. Through these attempts, we hope to improve the energy conversion efficiency of the solar cell and cut down the cost. I received my B.S. degree in Electrical and Computer Engineering from Shanghai Jiao Tong University in 2011 and I am currently enrolled in the Masters degree program in University of Michigan.


Undergraduate Students

   

Internships

   

High School Students

   
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