College of Engineering  |  Department of Electrical Engineering and Computer Science  |  ECE Division













Contact Information:
Prof. J. Kanicki
University of Michigan
EECS Department
2307 EECS Bldg.
1301 Beal Ave
Ann Arbor, MI 48109-2122

Tel: (734) 936-0964 (Office)
Tel: (734) 936-0972 (Lab)
Fax: (734) 615-2843
Email: Kanicki@eecs.umich.edu

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Research Index

a-InGaZnO Thin-Film Transistors Scaling for High Pixel Density Active Matrix Displays

Gwanghyeon Baek and Jerzy Kanicki

chart 1Due to the higher mobility (> 10 cm2/V·s), steeper sub-threshold swing (< 200 mV/Dec.), and long-range uniformity, an amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) has received considerable attention in the field of active matrix flat panel display applications (AM-FPD).

Achieving higher pixel density (> 300 DPI) is one of future technology trends in the area of AM-FPD. It is important to notice that the TFT miniaturization (channel width (W) and length (L) scaling) is a critical limitation for high resolution displays. Also the performance of TFTs is directly influenced by geometrical factors, such as L and W.
We evaluated the L and W scaling behaviors (see above figure on the right) for coplanar homojunction a-IGZO TFTs. It was previously reported that coplanar homojunction structure has good ohmic source/drain contact, a small parasitic capacitance, and capability of achieving small L. The cross-section of the fabricated TFT is shown in below.

cross section

 

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