GEORGE I. HADDAD: Papers Presented
"Paramagnetic Materials for Millimeter- and Submillimeter-Wave
Detection" (with C. F. Krumm). Presented at the Boulder Millimeter and
Far Infrared Conf., Estes Park, CO, September 1965.
"Quantum Detector" (with C. F. Krumm). Presented at the Sixth Int.
Conf. on
Microwave and Optical Generation and Amplification, Cambridge, England,
September 1966.
"Frequency Conversion in Read Diodes" (with W. J.
Evans).
Presented at the Conf. on Active Microwave Semiconductor Effects, New
York, February 1967.
"Sideband Generation in Avalanche Transit-Time
Diodes"
(with W. J. Evans). Presented at the High Frequency Generation
and
Amplification Conf., Ithaca, NY, August 1967.
"Nonlinear
Operating Characteristics of IMPATT Devices" (with W. J. Evans).
Presented at the Int. Electron
Devices Meeting, Washington, DC, October 1967.
"Power and Efficiency of IMPATT Oscillators" (with W. J.
Evans). Presented at the Int. Microwave Symp., Detroit, MI, May 1968.
"Large-Signal Analysis of Avalanche-Diode
Oscillators"
(with P. T. Greiling). Presented at the 7th Int. Conf. on
Microwave and
Optical Generation and
Amplification, Hamburg, Germany, September 1968.
"Varactor-Loaded Ladder Lines" (with V. K.
Tripathi).
Presented at the 7th Int. Conf. on Microwave and Optical
Generation
and Amplification, Hamburg, Germany, September 1968.
"Effect of Nonsaturated Drift Velocity on
Avalanche-Diode
Performance" (with P. T. Greiling). Presented at the Int.
Electron
Devices Meeting, Washington, DC, October 1968.
"Millimeter- and Submillimeter-Wave Detection by Paramagnetic
Materials" (with C. F.
Krumm). Presented at the Int.
Microwave Symp., Dallas, TX, May 1969.
"Large-Signal Analysis of Avalanche-Diode Oscillators with Various
Doping Profiles and
Materials" (with P. T. Greiling and R. J.
Lomax). Presented at the IEEE Device Research Conf., Rochester, NY, June
1969.
"Multifrequency Operation of IMPATT Diodes" (with W.
E.
Schroeder and P. T. Greiling). Presented at the Int. Electron Devices
Meeting, Washington, DC,
October 1969.
"Effect of Doping Profile on the Large-Signal Characteristics of
Avalanche
Diodes" (with P. T Greiling). Presented at the Avalanche-Diode Workshop,
New York City,
December 1969.
"Bulk Indium Antimonide as a Microwave-Biased Millimeter- and
Submillimeter-Wave
Detector" (with I. I. Eldumiati).
Presented at the Int. Electron Devices Meeting, Washington, DC, October
1970.
"Avalanche Region Width in Various Structures of IMPATT Diodes"
(with W. E.
Schroeder, C. M. Lee and R. J. Lomax). Presented at the Device Research
Conf., Ann Arbor, MI,
June 28-July 1, 1971.
"The Effects of Tunneling on an IMPATT
Oscillator" (with S. P. Kwok). Presented at the Device Research
Conf.,
Ann Arbor, MI, June 28-July 1, 1971.
"The Effects of
Doping Profile on Reflection-Type IMPATT Diode Amplifiers" (with R. W.
Laton). Presented at the
1971 European Microwave Conf., Stockholm, Sweden, August 1971.
"Intermodulation Characteristics of X-Band IMPATT Amplifiers"
(with
R. J. Trew and
N. A. Masnari). Presented at the 1972 IEEE G-MTT Int. Microwave Symp.,
Chicago, IL, May
1972.
"Diffusion Effects in GaAs Schottky Barrier IMPATTS" (with P.
T.
Greiling, R.
A. Murphy, W. T. Lindley and R. W. Sudbury).
Presented at the 1972 IEEE Int. Electron Devices Meeting, Washington, DC,
December 1972.
"Characteristics of IMPATT Diode Reflection Amplifiers" (with
R. W.
Laton). Presented
at the 1973 IEEE G-MTT Int.
Microwave
Symp., Boulder, CO, June 1973.
"Computer Simulation of TRAPATT Oscillations in Si n+pp+ and
p+nn+
Diodes" (with C. M. Lee and R. J. Lomax).
Presented at the Cornell Conf. on Microwave Semiconductor Devices,
Circuits, and Applications,
Ithaca, NY, August 1973.
"Comparison of S-Band Silicon n+pp+ and p+nn+ TRAPATT
Oscillators" (with R. J. Trew and N. A. Masnari). Presented at the
Cornell Conf. on Microwave
Semiconductor Devices, Circuits, and Applications, Ithaca, NY, August
1973.
"The Effects of Doping Profile, Material Parameters
and
Operating Conditions on the Noise Properties of IMPATT Devices"
(with C. Chao). Presented at the 1973 Int. Electron Devices
Meeting,
Washington, DC, December 1973.
"Noise Properties of Transferred-Electron
Oscillators"
(with
J. T. Patterson and R. J. Lomax). Presented at the 1973 Int.
Electron
Devices Meeting, Washington, DC, December 1973.
"Optimum Doping Profiles in Si and GaAs
IMPATTs". Presented at the 1974 Workshop on Compound
Semiconductors for Microwave Devices, Philadelphia, PA, February 1974.
"Properties and Potential of BARITT Devices" (with S. P.
Kwok and H. Nguyen-Ba). Presented at the 1974 Int. Solid-State Circuits
Conf., Philadelphia, PA,
February 1974.
"Circuit Optimization of S-Band TRAPATT Oscillators" (with R.
J.
Trew and N. A.
Masnari). Presented at the 1974 IEEE/GMTT Int. Microwave Symp., Atlanta,
GA, June 1974.
"Properties and Potential of IMPATT Diodes," (Invited Paper).
Presented
at
the DDRE/NRL Classified Workshop on Solid-State Modules for Electronically
Steerable Array
Antennas, Washington, DC, December 1974 .
"Harmonic Tuning Effects of TRAPATT
Oscillators" (with R. J. Trew and N. A. Masnari). Presented at the 1975
MTT-S Int. Microwave
Symp., Palo Alto, CA, May 1975.
"Experimental Investigation of TRAPATT Diode
Trigger Conditions" (with J. R. East and N. A. Masnari). Presented at the
Cornell Conf. on Active
Semiconductor Devices for Microwaves and Integrated Optics, Ithaca, NY,
August 1975.
"Properties of BARITT Devices" (with H. Nguyen-Ba and J.
R. East). Presented at the Workshop on Compound Semiconductor Microwave
Materials and
Devices, San Diego, CA, March 1976.
"Further Insight into High-Efficiency GaAs
IMPATT Diodes" (with P. E. Bauhahn). Presented at the Workshop on
Compound Semiconductor
Microwave Materials and Devices, San Diego, CA, March 1976.
"BARITT Devices for Self-Mixed Doppler Radar Applications"
(with J.
R. East and H.
Nguyen-Ba). Presented at the 1976 Int. Microwave Symp., Cherry Hill, NJ,
June 1976.
"Microwave Solid-State Devices for Self-Mixing Doppler Radars."
Presented at the Int.
Symp. on Automotive Electronics and Electric Vehicles, Dearborn, MI,
September 1976.
"Transient Analysis of the TRAPATT Mode" (with M.
Khochnevis-Rad).
Presented at
the Int. Electron Devices Meeting, Washington, DC, December 1976.
"Mixed Tunneling and Avalanche Mechanisms in p-n Junctions and
their
Effects on
Microwave Transit-Time Devices" (with M. E. Elta). Presented at the
Workshop on Compound
Semiconductor Microwave Materials and Devices, New Orleans, LA, February
1977.
"K-Band BARITT Doppler Detector" (with J. R. East and P.
J.
McCleer). Presented at the 1977 IEEE MTT-S Int. Microwave Symp., San
Diego, CA, June 1977.
"Operation of Transistors in the Punch-Through Mode"
(with P. J. McCleer). Presented at the Sixth Biennial Conf. on
Active
Microwave Semiconductor Devices and
Circuits, Ithaca, NY, August 1977.
"Large-Signal Performance of Microwave Transit-Time p-n
Junctions in
Mixed Tunneling
and Avalanche Breakdown" (with M. E. Elta). Presented at the Workshop on
Compound
Semiconductor Microwave Materials and Devices, San Francisco, CA, February
1978.
"Device-Circuit Interaction Simulation of a TRAPATT Amplifier"
(with
R. K. Mains and
N. A. Masnari). Presented at the 1978 IEEE MTT-S Int. Microwave Symp.,
Ottawa, Canada, June
1978.
"BARITT Diode Video Detectors" (with P. J. McCleer). Presented
at
the 1978
IEEE MTT-S Int. Microwave Symp., Ottawa, Canada, June 1978.
"High-Frequency Limitations in Solid-State Devices" (Invited
Talk)
(with M. E. Elta).
Presented at the Workshop on Low-Noise Millimeter-Wave Receivers, Ottawa,
Canada, June 1978.
"Computerized C(V) Profiling Techniques" (with P. A.
Blakey, J. R. East, J. Heaton and D. Kinzel).
Presented at the Seventh Biennial Conf. on Active Microwave Semiconductor
Devices and Circuits,
Ithaca, NY, August 1979.
"Millimeter-Wave IMPATT Diode Modeling" (with P. A.
Blakey, R. K. Froelich, R. O. Grondin and R. K. Mains). Presented
at the
Eight Biennial Cornell Elec. Eng. Conf. on Microwave
Semiconductor
Devices and Circuits, Ithaca, NY, August 1981.
"Millimeter-Wave BARITT Diode Mixers and Detectors" (with J.
Chen,
J. R. East, R. O.
Grondin, Y. Anand, D. Densenouci, S.
Ellis, and L. Mang). Presented at the 1982 IEEE MTT-S Int. Microwave
Symp., Dallas, TX, June
1982.
"Simulation of GaAs IMPATT
Diodes Including Energy and Velocity Transport Equations" (with R.
K. Mains). Presented at the 1983 WOCSEMMAD Conf., San Antonio, TX,
February 1983.
"Millimeter-Wave Semiconductor Devices" (with P. A. Blakey, J.
R.
East and R. K.
Mains). Presented at Ohmcon/83, Detroit, MI, June 1983.
"Assessment of SiC IMPATT Diode Development for Future Space
Communication
Applications" (with K. B. Bhasin, D. J.
Connolly and
A. J. Powell). Presented at the National Review Meeting on Growth and
Characterization of SiC and
its Employment in Semiconductor Applications, Raleigh, NC, November 27,
1984.
"Solid-State Electronics Research at The University of
Michigan."
Presented at the NSF
Workshop on Future Research Opportunities, Arlington, TX, January 28-31,
1986.
"Magnetostatic-Wave Propagation in a Finite YIG Loaded
Rectangular
Waveguide" (with
M. Radmanesh and C. M. Chu). Presented at the MTT Symposium, Baltimore,
MD, June 1986.
"Two Terminal Millimeter-Wave Solid Devices." Presented at the
1985
Cornell
Conference, Ithaca, NY, July 28-31, 1986.
"Millimeter Wave
Heterojunction MITATT
Diodes" (with N.
Dogan, J. East and M. Elta). Presented at MITT Symposium, Las Vegas, NV,
June 1987.
"A Proposed Narrow-Band-Gap Base Transistor Structure" (with R.
Mains). Presented at
the 4th International Conference on Superlattices, Microdevices and
Microstructures, Trieste, Italy,
August 1988.
"Novel Use of Resonant Tunneling Structures for Optical and IR
Modulators" (with I.
Mehdi and R. Mains). Presented at 4th International Conference on
Superlattices, Microdevices and
Microstructures, Trieste, Italy, August 1988.
"Resonant Tunneling Devices for Millimeter-Wave Generation"
(with R.
K. Mains and I.
Mehdi). Presented at the 13th International Conference on Infrared and
Millimeter Waves, Honolulu,
Hawaii, December 1988.
"InP Based Resonant Tunneling Diodes for Microwave and
Millimeter-Wave Application"
(with I Mehdi). Presented at the International Nanostructure Physics and
Fabrication Conference,
College Station, TX, March 1989. Published in the proceedings
Nanostructure Physics and
Fabrication, ed. M. A. Reed and W. P. Kirk, Academic Press, 1989.
"Fabrication and Room Temperature Operation of a Resonant
Tunneling
Transistor with a
Pseudomorphic InGaAs Base" (with U. K. Reddy, I. Mehdi and R. K. Mains).
Presented at the
International Nanostructure Physics and Fabrication Conference, College
Station, TX, March 1989;
published in the proceedings Nanostructure Physics and
Fabrication, ed. M. A. Reed and W. P.
Kirk, Academic Press, 1989, pp. 189-193.
"InGaAs Based Resonant Tunneling Diodes for Microwave and
Millimeter-Wave
Applications" (with I. Mehdi). Presented at the Applied Physics Society
Meeting, St. Louis, MO,
March 1989.
"Modeling and Simulation of GaAs Devices" (Invited Talk).
Presented at
the
Institute of Electronic
Structure and Laser Workshop, Foundation for Research and Technology -
Hellas, Heraklion, Crete,
Greece, May 22-23, 1989 (invited).
"Design, Fabrication and Operation of a Hot Electron Resonant
Tunneling Transistor"
(with U. K. Reddy, I. Mehdi and R. K. Mains). Presented at the 6th
International Conference on Hot
Carriers in Semiconductors, Phoenix, AZ, July 1989. "Properties and
Device
Applications of Deep Quantum Well Resonant Tunneling Structures" (with I.
Mehdi, R. K. Mains
and U. K.
Reddy). Presented at the 4th International
Conference on Modulated Structures, Ann Arbor, MI, July 1989.
"Nanoelectronic
Devices." Presented at Electro/89, New York, NY, April 1989.
"Microwave/Millimeter-Wave Solid-State Devices." Presented at
Electro/89, New York,
NY, April 1989.
"Potential and Capability of Resonant Tunneling Diodes" (with C.
Kidner, I. Mehdi, and
J. East). Presented at 1st International Symposium on Space Terahertz
Technology, Ann Arbor,
March 5-6, 1990.
"Tunnel Transit Time (TUNNETT) Devices for Terahertz Sources"
(with
J. East, C. C.
Chen and K. Hashim). Presented at the 1st International Symposium on
Space Terahertz
Technology, Ann Arbor, March 5-6, 1990.
"Resonant Tunneling Diodes
Stability and its Consequences for High Frequency Operation" (with C.
Kidner, I. Mehdi and J. East). Presented at SPIE's 1990 Symposium on
Advances in
Semiconductors and Superconductors: Physics Towards Device Applications,
San Diego, March
1990.
"Self-Consistent Modeling of Resonant Tunneling Diodes and
Transistors," (with R.
Mains and J. P. Sun). Proceedings of the Seventh International conference
on the Numerical
Analysis of Semiconductor Devices and Integrated Circuits (NASECODE VII),
April 1991, Copper
Mountain, Co.
"A Numerical Large Signal Model for the Heterojunction Bipolar
Transistor" (with D.
Teeter, J. R. East and R. K. Mains).
Presented at the Workshop on Computational Electronics, University of
Illinois, May 1990.
"The Bound State Resonant Tunnel Transistor (BSRTT):
Fabrication, D.C. I-V Characteristics and High-Frequency Properties" (with
U. K. Reddy, J. P.
Sun and R. K. Mains). Presented at the 5th International Conference on the
Physics of Electro-optic
Microstructures and Microdevices, Heraklion, Crete, Greece, July 1990.
"Resonant Tunneling Devices for Very High Speed Optoelectronics
Applications." Plenary
Session Presentation, SPIE International Conference on Physical Concepts
of Materials for Novel
Optoelectronic Device Applications, Aachen, Germany, October
28-November 2, 1990.
"Resonant Tunneling Diode Video Detectors for 10-100 GHz
Applications," (with I.
Mehdi and J. East). Presented at the Infrared and Millimeter-wave
Conference, Orlando, FL,
December 1990.
"The Design of an ECR Plasma System and its
Application
to
InP Grown by CBE," (with M. E. Sherwin, G. O. Munns, E. G.
Woelk, T. J.
Drummond, M. E. Elta and F. L. Terry, Jr.). Presented at the 1990 MBE VI
Conference.
"The Optimization of InGaAs and InP Growth Conditions by CBE,"
(with
M. E. Sherwin,
G. O. Munns, M. E. Elta, E. G. Woelk, S. Crary and F. K. Terry, Jr.).
Presented at the 1990 MBE
VI Conference.
"Quantum Devices for Arithmetic and Logic Operations,"
(with T. Singh and R. Lomax). Presented at the 1991 IEEE
International Solid-State Circuits Conference, San
Francisco, CA, February 13-15, 1991.
"Fundamental Mode Operation of Gunn
Devices above 100 GHz," (with R. Kamoua and J. East). Presented
at
the Second International Conference on Space Terahertz
Technology,
Pasadena, CA, February 1991.
"GaAs IMPATT Diodes for
Frequencies above 100 GHz: Technology and Performance," (with H.
Eisele,
R. K. Mains
and C. C. Chen). Presented at the Second International
Conference on Space
Terahertz
Technology, Pasadena, CA, February 1991.
"Design and Evaluation of W and D Band TUNNETT
Devices,"
(with C. Kidner, J. R. East and H. Eisele). Presented at the
Second
International Space Terahertz Technology,
Pasadena, CA, February 1991.
"A Comparison Between the Heterojunction Bipolar Transistor
Power
Performance
Computer using Signal Y Parameters and a Full Time Domain Simulation,"
(with D. Teeter, J. East
and R.
Mains). Presented at the NASCODE Conference, Copper Mountain, CO, April
8-12, 1991.
"Integration of a Coherent Optical
Receiver with Adaptive Image Rejection Capability," (with G.
Lachs, P. K. Bhattacharya, R. E. Henning, P. J. McCleer, J. Pamulapati, S.
Zaidi, A. Singh and S. Peng). Presented at the SPIE Conference on
Superconductivity Applications for Infrared and Microwave Devices II,
Orlando, FL, April 1991.
"Performance Characteristics of
Y-Ba-Cu-O Microwave Superconducting Detectors," (with J. Shewchun and P.
J. McCleer).
Presented at the SPIE Conference on Superconductivity Applications for
Infrared and Microwave
Devices II, Orlando, FL, April 1991.
"Investigation of Interface
Transition Widths for InGaAs/InP and InP/InGaAs Grown by Chemical Beam
Epitaxy using
Spectroscopic Ellipsometry," (with M.
Sherwin, G. Munns, E. Woelk, D. Nichols, F. Terry, Jr. and P.
Bhattacharya). Presented at the
TMS Workshop on OMVPE, Panama Beach, FL, April 1991.
"The Growth of High Quality InP/InGaAs/InGaAsP Interfaces by CBE
for
SCH Quantum
Well Lasers, (with M.
Sherwin,
G. Munns, E. Woelk, D. Nichols, F. Terry and P. Bhattacharya). Presented
at the IEEE InP and
Related Materials Conference, Cardiff, UK, April 1991.
"Large Signal Characterization and Numerical Modeling of the
AlGaAs/GaAs HBT,"
(with D. Teeter and J. East). Presented at the 1991 MTT Symposium, June
1991.
"Error Correction and Power Calibration of Active Load Pull
Measurement Systems,"
(with D. Teeter and J. East). Presented at the 37th ARFTG Conference,
Boston, MA, June 1991.
"High Frequency Large Signal Characterization of Heterojunction
Bipolar Transistors,"
(with D. Teeter and J. East).
Presented at the 1991 IEEE/Cornell Conference on Advanced
Concepts in High Speed Semiconductor Devices and Circuits,
Ithaca,
NY, August 1991.
"The Design of an ECR Plasma System and its
Applications
to InGaAs and InP Growth by CBE," (with M. Sherwin, G. Munns, M. Elta, F.
Terry and E.
Woelk). Presented in a poster session, 6th International MBE Conference,
Austin, TX, August 1991.
"Optimization of InxGa1-xAs, InP and Related Heterostructures
Grown
via
MOMBE and CBE," (with M. Sherwin, F. Terry and G. Munns), Presented as a
poster session at
the 6th International MBE Conference, Austin, TX, August 1991.
"InAlAs/InGaAs/InP Submicron HEMT's Grown by CBE," (with G.
Munns, M.
Sherwin, T. Brock, Y. Kwon, G. Ng and D. Pavlidis).
Presented at the 3rd International Conference on Chemical Beam Epitaxy and
Related Growth
Techniques, Oxford, UK, September 1991.
"Chemical Beam Epitaxy for the Growth of InP Based Electronic
and
Opto-Electronic
Devices," (with M. E. Sherwin, G. O. Munns, D. T.
Nichols, F. L. Terry, Jr. and P. K. Bhattacharya). Presented at the
Second Workshop on Electronic
and Opto-Electronic Materials for Tactical and Strategic Applications,
Huntsville, AL, October 1991.
"C-V Characteristics of Quantum Well Varactors," (with J. P.
Sun, W.
L. Chen, R. K.
Mains and J. East). Presented at and in the proceedings of the 1991
International Semiconductor
Device Research Symposium, Charlottesville, VA, December 1991.
"CBE Grown
InGaAs/InP Hot Electron Transistor (HET) with Pd/Ge Shallow Ohmic Base
Contact." Presented at
and in the proceedings of the 1991 Semiconductor Device Research
Symposium, Charlottesville, VA,
December 1991.
"Breakdown Voltage Improvement in Strained
InGaAs/GaAs MESFET's."
Presented, and in the proceedings of the 1991 Semiconductor Device
Research Symposium,
Charlottesville, VA, December 1991.
"Planar Doped Barrier Mixers and Detectors," (with
T.
H. Lee, Y.
Anand and
J. East), Space Terahertz Symposium, Ann Arbor, MI,
March 1992.
"Transit-Time Devices as Local Oscillators for
Frequencies
Above
100 GHz," (with H. Eisele and C. Kidner). Presented at the 3rd
Conference on Space Terahertz
Technology, Ann Arbor, MI March 1992.
"Modelling, Design, Fabrication and Testing of InP Gunn Devices
in
the D-band (110 GHz - 170 GHz)," (with R. Kamoua, H. Eisele, J. East, G.
Munns and M. Sherwin). Presented at the 3rd Conference on Space Terahertz
Technology, Ann
Arbor, MI, March 1992.
"Fmax-Enhancement in CBE-Grown InAlAs/InGaAs
HEMT's Using Novel Self-Aligned Offset-Gate Technology," (with Y. Kwon, T.
Brock, G. I. Ng, D. Pavlidis, G. O. Munns and M. E. Sherwin). Presented at
the 4th Annual InP and Related Materials Conference, Newport, RI, April
1992.
"Superlattice Barrier Varactors," (with C. Raman, J.
P. Sun, W.
L. Chen, G. O. Munns and J. East). Presented at the Third International
Symposium on Space
Terahertz Technology, Ann Arbor, MI, May 1992.
"Analysis of Intermodulation Distortion in AlGaAs/GaAs HBT's"
(with
D. Teeter, M. Karakucuck and J. East). Presented at the International
Microwave Symposium, June 1992.
"Optimized 0.1 Micron GaAs MESFET's" (with K. Moore, J. East and
T.
Brock). Presented at the 1992
International Microwave Symposium, June 1992.
"High Breakdown Voltage Submicron Strained
InGaAlAs/GaAs
FET's" (with K. Eisenbeiser, J. East and T. Brock). Presented
at the 1992
International Microwave Symposium, June
1992.
"The Growth of InAlP Using Trimethyl Amine Alane by Chemical
Beam
Epitaxy," (with
G. O. Munns, W. L. Chen, and M. E. Sherwin). Presented at the Seventh
International Conference
on Molecular Beam Epitaxy, Stuttgart, Germany, August 1992.
"Parametric Investigation of InGaAs/InAlAs HEMT's Grown by CBE,"
(with G. O.
Munns, M. E. Sherwin, Y. Kwon, T. Brock, W. L. Chen and D.
Pavlidis). Presented at the 7th International MBE Conference, Stuttgart,
Germany, August 1992.
"A Fully Integrated Monolithic D-band Oscillator-Doubler Chain
Using
InP-Based
HEMTs," (with Y. Kwon, D. Pavlidis, P. Marsh, G. I. Ng, T.
Brock and G. O. Munns). Technical Digest of the 14th Annual IEEE GaAs IC
Symposium, Miami,
FL, pp. 51-54, October 1992.
"InP-Based Quantum Effect Devices: Device Fabrication and
Application
in Digital Circuits," (with W. L. Chen, G. O.
Munns, S. Mohan and P. Mazumder). Proceedings of the 1992 International
Electron Device and Materials Symposium.
November 1-4, 1992, Taipei, Taiwan.
"CBE Grown in InGaAs/InP Hot Electron
Transistors and Heterojunction Bipolar Transistors with InGaAs Contact
Layers," (with W. L. Chen, J. P. Sun, M. E. Sherwin, G. O. Munns, J. R.
East and R. K. Mains). Presented at the 1992 International Electron Device
and Materials Symposium, November 1-4, 1992, Taipei, Taiwan.
"Numerical simulation of TUNNET and MITATT Devices in the
Millimeter
and Submillimeter Range," (with C. C. Chen, R. K. Mains and H. Eisele).
Presented at the Fourth International Symposium on Space Terahertz
Technology, UCLA, March 30,-April 1, 1993.
"InAlAs/InGaAs Heterojunction Bipolar Transistors Grown by
Chemical
Beam Epitaxy
(CBE)," (with J. Cowles, W. L. Chen and G. O. Munns).
Presented at the 5th Annual InP Related Materials Conference, April 18-22,
1993, Paris, France.
"Electro-Optic Properties of Pseudomorphic Low-Dimensional (2-D
and
0-D) Quantum Confined Structures," (with L. Davis, P. K. Bhattacharya, K.
K. Ko, W-Q. Li, H. C. Sun, S. W. Pang and T. Brock). Presented at the
European Conference on Integrated Optics, April 1993.
"THz Sources Based on Intersubband Transitions in Quantum Wells
and
Strained Layers,"
(with A. Afzali-Kushaa and T. B. Norris).
Presented at the Fourth International Symposim on Space Terahertz
Technology, Los Angeles,
California, March 1993.
"Experimental Realization of the Bound State Resonant Tunneling
Transistor," (with W.
L. Chan, G. O. Munns and J. R. East).
Presented at
1993 IEEE DRC, June 1993.
"Influence of Hydride Purity on InP and InAlAs Grown by CBE,"
(with
G. O. Munns, W. L. Chen, M. E. Sherwin, D. Knightly, L. Davis and P. K.
Bhattacharya). Presented at the 4th International Conference on Chemical
Beam Epitaxy and Related Growth Technology, Nora, Japan, July 21-23, 1993.
"The Growth of Resonant Tunneling Hot Electron Transistors using
Chemical Beam
Epitaxy," (with W. L. Chen, G. O. Munns, L. Davis and P.
K. Bhattacharya). Presented at ICCBE-4, Nora, Japan, July 21, 1993.
"Development of an Appropriate Model for the Design of D-Band an
InP
Gunn Devices,"
(with R. Kamoua, H. Eisele, G. Munns and M. Sherwin).
Presented at the 14th IEEE Cornell Conference, Ithaca, NY, August 2-4,
1993.
"InGaAs/AlAs/InGaAsP Resonant Tunneling Bipolar Transistors
Grown by
Chemical
Beam Epitaxy," (with W. L. Chen, G. O. Munns, D. Knightly and J. R. East).
Presented at the
IEEE 1993 Cornell Conference, August 1993.
"InAlAs/InGaAs(P) Double Heterojunction Bipolar Transistors with
High
Breakdown Voltage Grown by Chemical Beam Epitaxy," (with J. C. Cowles, W.
L. Chen and G. O. Munns). Presented at the IEEE 1993 Cornell Conference,
August 1993.
"On the Feasibility of Intersubband Transition Lasers," (with A.
Afzali-Kushaa and T. B. Norris). Presented at the IEEE 1993 Cornell
Conference, August 1993.
"Structure and Computer Modeling of GaAs TUNNETT and MITATT
Devices
for
Frequencies Above 100 GHz," (with C. C. Chen and R. K. Mains).
Presented at the IEEE 1993 Cornell Conference, August
1993.
"Direct Optical Injection Locking of InP-based MODFETT and
GaAs-based
HBT
Oscillators," (with W. Li, D. Yang, P. Freeman, J. East and P.
Bhattacharya). Presented at the IEEE
1993 Cornell Conference, August 1993.
"Effects of Gate Recess Depth on Very High Performance 0.1um
GaAs
MESFET's,"
(with K. E. Moore, J. R. East and T. Brock).
Presented at the 1993 European Microwave Conference, Spain, September
1993.
"Structure Design and Numerical Simulation of High Frequency
GaAs/InP Schottky
Contact TUNNETT/MITATT Devices," (with C.-C. Chen, R.
K. Mains and H. Eisele). Presented at the Millimeter-Wave Conference,
Huntsville, Alabama,
September 1993.
"Power Capabilities of CW-Oscillators with GaAs- and InP-Based
Two-Terminal Devices
in the Millimeter and Submillimeter Wave Frequency Range," (with H.
Eisele, R. Kamoua and C.
Kidner).
Presented at the Millimeter-Wave Conference, Huntsville, Alabama,
September 1993.
"Interband Absorption in p-Type InGaAs at FIR Frequencies,"
(with X.
Zhang, P. Liao
and A. Afzali-Kushaa). Presented at the 1993 Material Research Society
Conference on Diagnostic
Techniques for Materials Processing, Boston, Massachusetts, November 1993.
"Device
Applications of Resonant Tunneling Structure," (with J.
East). Presented at the 1993 International Semiconductor Device Research
Symposium,
Charlottesville, Virginia, December 1993.
"The Validity of Reciprocity and the Ebers-Moll
Model in Abrupt Heterojunction Bipolar Transistors," (with J. Cowles, K.
Yang, A. Guiterrez-
Aitken, G. O. Munns, W. L. Chen and P. K. Bhattacharya). Presented at the
1993 International
Semiconductor Device Research Symposium, Charlottesville, Virginia,
December 1993.
"Optically Pumped Intersubband Lasers," (with A. Afzali-Kushaa
and T.
B. Norris).
Presented at the 1993 International Semiconductor Device Research
Symposium, Charlottesville,
Virginia, December 1993.
"Numerical Study of the DC Characteristics of InGaAs Abrupt
Emitter
HBTs Using a Self-
Consistent Boundary Condition Approach," (with K. Yang and J. East).
Presented at the 1993
International Semiconductor Device Research Symposium, Charlottesville,
Virginia, December 1993.
"Structure and Simulation of GaAs TUNNETT and MITATT Devices
for
Frequencies
Above 100 GHz," (with C. C. Chen, R. K.
Mains and
H.
Eisele). Presented at the Conference on Advanced Concepts in High Speed
Semiconductor Devices
and Circuits, Cornell University, Ithaca, August 2-4, 1993.
"Recent Experimental Results from GaAs TUNNETT Diodes above 100
GHz,"