a) Discrete devices (two and three-terminal devices as oscillators, amplifiers, multipliers, etc.)

b) Monolithic millimeter-wave integrated circuits (HEMT and HBT InP-based devices, monolithic amplifiers, oscillators, mixers, multipliers, T/R modules)

2. Optoelectronic Integrated Circuits

a) Monolithically integrated injection locked oscillators for phased array applications (HEMT's, HBT's)

b) Integrated optoelectronic photoreceivers (PIN/MSM-HEMT, PIN/MSM-HBT, HBT-HBT, p+np+-HBT or JFET for InGaAs devices)

3. Digital Circuits

a) High speed digital integrated circuits (GaAs microcomputer, MIPS instruction set architecture; presently with MESFET technology; design methodology for high-performance digital systems; extension to other devices such as HEMTs, HBTs, etc.)

b) HBT-based digital circuits (A-D and D-A conversion circuits, high-speed logic, etc.)

c) Very high speed/functionality, area compact circuits based on novel negative resistance tunneling devices (RHETS, BSRTTS, very high speed, fewer transistors, complete logic family based on NDR characteristics)

4. Facilities

Excellent facilities are available for design and testing.

a) Mentor graphics software (400 Apollo work stations)

b) Excellent simulation/design capabilities for all of the above

c) Microwave CAD tools for MMIC design and layout (Compact, EESOF, Libra, etc.)

d) Instrumentation for high frequency (160 GHz) and high-speed IC testing

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