EECS 320 (Fall 2002): Introduction to Semiconductor Device Theory
Prerequisite: EECS 215, PHYS 240 or 260. I, II (4 credits)
Introduction to semiconductors in terms of atomic bonding and electron energy bands. Equilibrium statistics of electrons and holes. Carrier dynamics; continuity, drift, and diffusion currents; generation and recombination processes, including important optical processes. Introduction to: PN junctions, metal-semiconductor junctions, light detectors and emitters; bipolar junction transistors, junction and MOSFETs.
EECS 421 (Fall 1999, 2000, 2001, 2003): Properties of Transistors
Prerequisite: EECS 320 or Graduate Standing. I (4 credits)
In depth understanding of the device physics and working principle of some basic IC components: metal-semiconductor junctions, P-N junctions, metal-oxide-semiconductor junctions, MOSFETs and BJTs
EECS 423 (Fall 2007): Solid-State Device Laboratory
Prerequisite: EECS 320 or Graduate Standing. I (4 credits)
Semiconductor material and device fabrication and evaluation: diodes, bipolar and field-effect transistors, passive components. Semiconductor processing techniques: oxidation, diffusion, deposition, etching, photolithography. Lecture and laboratory. Projects to design and simulate device fabrication sequence.
EECS 528 (Winter 2003, 2004, 2005, 2006, 2007, 2008):
Principles of Microelectronics Process Technology
Prerequisite: EECS 421, EECS 423. II (3 credits)
Theoretical analysis of the chemistry and physics of process technologies used in micro-electronics fabrication. Topics include: semiconductor growth, material characterization, lithography tools, photo-resist models, thin film deposition, chemical etching, plasma etching, electrical contact formation, micro-structure processing, and process modeling.
EECS 598 (Winter 2000, 2001, 2002):
Nanoelectronics and Nanofabrication Technology
EECS 598: Nanoelectronics and Nanofabrication Technology
Winter 2000: MW 11:00-12:30, Instructor: L. J. Guo
This course will expose the students with different aspects of active researches in exploring the next-generation of nanometer-scale electronic devices. Topics will range from current issues in nanoscale CMOS, to new device concepts that take the advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electron charges. Another focus in nanoelectronics research is the advancement of nanofabrication technology that enables the creation of nanostructures with ever decreasing feature dimensions. We will be exploring some of these technologies, with emphasis on various nanolithography techniques, as well as other topics such as growth of self-assembled quantum dots and carbon nanotubes and their electronic applications.
Along with the regular lectures, a colloquium/seminar series on nanoelectronics and nanomaterials is also planned. Speakers will be invited to address contemporary issues that span a broader range in the area of nanotechnologies.
