Nanoelectronics, especially Silicon single-electron and quantum-effect devices, constitutes much of Dr. Guo¡¯s Ph.D. research work. He has analyzed the first Si single-hole quantum dot transistor (Appl. Phys. Lett. 67, 2338, 1995) and demonstrated the first room temperature single-electron memory in crystalline Si (Science, 275, 649, 1997). He also applied the newly invented nanoimprint lithography technique to the fabrication of Si nanoelectronic devices (Appl. Phys. Lett. 71, 1881, 1997). He further investigated Si transistors with stacked quantum dot structures for tuning the electronic properties (Electron. Lett. 34, 1030; and Appl. Phys. Lett. 73, 3429, 1998). During his postdoc and his initial couple of years at the University of Michigan, he and his collaborators have further studied carrier transport in coupled Si-dots (Appl. Phys. Lett, 76, 1591, 2000) and coherent transport in a quantum-dot dimmer (Phys. Rev. Lett. 88, 186801, 2002); spin transitions (Phys. Rev. B. 63, 5321, 2001) and magnetic field induced reconstruction of the ground state in the few-electron regime (Phys. Rev. Lett. 87, 166802, 2001).
