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Wei Lu > Dept. of Electrical Engineering & Computer Science (EECS) |
Biography Professor Wei Lu received B.S. degree in physics from Tsinghua University, Beijing, China, in 1996, and M.A. and Ph.D. in physics from Rice University, Houston, TX in 1999 and 2003, respectively. From 2003 to 2005, he was a postdoctoral research fellow at Harvard University, Cambridge, MA. He joined the faculty of the Univeristy of Michigan in 2005 and is currently an Associate Professor. He is currently a co-Editor-in-Chief of Nanoscale, a member of the ITRS Emerging Research Device working group, a member of the IEEE, MRS, APS, and an active member of several IEEE technical committees and program committees. He was a recipient of the NSF CAREER Award in 2010. As of August 2011, he has published 40 journal papers that have been cited over 3500 times to date, with an h-factor of 23. More information about me. Nanoelectronics, memory (RRAM) and logic circuits based on two-terminal resistive switches (memristors), nanowires and novel transistor devices, electrical transport in low-dimensional systems, nanoelectromechanical systems. Selected Publications (for a complete list, please visit here)Ting Chang, Sung-Hyun Jo, and Wei Lu, "Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor" ACS Nano, 9, 7669-7676 (2011). PDF P. Sheridan, K.H. Kim, S. Gaba, T. Chang, L. Chen, and W. Lu, "Device and SPICE modeling of RRAM devices" Nanoscale, 3, (9), 3833-3840 (2011). Wayne Y. Fung, Lin Chen, and Wei Lu, "Esaki Tunnel Diodes Based on Vertical Si-Ge Nanowire Heterojunctions" Appl. Phys. Lett., 99, 092108 (2011). PDF Sung Hyun Jo, Ting Chang, Idongesit Ebong, Bhavi Bhavitavya, Pinaki Mazumder and Wei Lu, "Nanoscale Memristor Device as Synapse in Neuromorphic Systems," Nano Lett., 10, 1297-1301 (2010). PDF Featured in Nature, EE Times, New Scientist, PhysicsOrg, Chemistry World and other news outlets.
Sung Hyun Jo, Kuk-Hwan Kim and Wei Lu,
"High-Density Crossbar Arrays Based on a Si
Memristive System", Nano Lett.,
9, 870-874 (2009).
PDF Highlighted in Nature Materials.
Sung Hyun Jo and Wei Lu, "CMOS Compatible Nanoscale
Nonvolatile Resistance Switching Memory",
Nano Lett., 8, 392-397 (2008).
PDF Eric N. Dattoli,
Qing Wan, Wei Guo, Yanbin Chen, Xiaoqing Pan, and Wei Lu, "Fully
Transparent Thin-Film Transistor Devices Based on SnO2
Nanowires" Nano Lett., 7, 2463-2469
(2007).
PDF Wei
Lu, and C. M. Lieber, "Nanoelectronics from the
Bottom-up",
Nature Mater., 6, 841-850 (2007).
PDF Jie
Xiang, Wei Lu, Yongjie Hu, Yue Wu, Hao Yan and Charles
M. Lieber, "High performance field effect transistors
based on Ge/Si nanowire heterostructures", Nature,
441, 489-493 (2006).
PDF Wei
Lu, Jie Xiang, Brian P. Timko, Yue Wu and Charles M.
Lieber, "One-dimensional hole gas in germanium/silicon
nanowire heterostructures", Proc. Natl. Acad. Sci.
USA,
102, 10046-10051 (2005).
PDF
Yue Wu,
Jie Xiang, Chen Yang, Wei Lu and Charles M. Lieber,
"Single-crystal metallic nanowires and metal/semiconductor
nanowire heterostructures", Nature. 430,
61-65 (2004).
PDF
Wei Lu,
Zhongqing Ji, Loren Pfeiffer, K. W. West and A. J. Rimberg,
"Real-time Detection of Electron Tunneling in a Quantum
Dot", Nature.
423, 422-425 (2003).
PDF
W. Lu, A.
J. Rimberg, K. D. Maranowski and A. C. Gossard,
"Single-electron transistor strongly coupled to an
electrostatically defined quantum dot", Appl. Phys. Lett.
77, 2746-2478 (2000).
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