Charles M. Vest Distinguished University Professor
James R. Mellor Professor of Engineering
PH: (734) 763-6678
Molecular beam epitaxy of III-V and III-nitride semiconductors, cavity quantum electrodynamics and strong coupling phenomena, low-dimensional quantum confined systems, quantum dot lasers and detectors, optoelectronic integrated circuits, spintronic devices, visible LEDs and lasers.
Pallab Bhattacharya is the Charles M. Vest Distinguished University Professor of Electrical Engineering and Computer Science and the James R. Mellor Professor of Engineering in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. He received the M. Eng. and Ph.D. degrees from the University of Sheffield, UK, in 1976 and 1978, respectively. Professor Bhattacharya was an Editor of the IEEE Transactions on Electron Devices and Editor-in-Chief of Journal of Physics D. He has edited Properties of Lattice-Matched and Strained InGaAs (UK: INSPEC, 1993) and Properties of III-V Quantum Wells and Superlattices (UK: INSPEC, 1996). He has also authored the textbook Semiconductor Optoelectronic Devices (Prentice Hall, 2nd edition). His teaching and research interests are in the areas of compound semiconductors, low-dimensional quantum confined systems, nanophotonics, spintronics, and optoelectronic integrated circuits. He is currently working on high-speed quantum dot lasers, nitride-based visible quantum dot lasers and LEDs, nanowire heterostructures, cavity quantum electrodynamics and polariton lasers.
Professor Bhattacharya is a member of the National Academy of Engineering. He has received the John Simon Guggenheim Fellowship, the Heinrich Welker Medal, the IEEE (EDS) Paul Rappaport Award, the IEEE (LEOS) Engineering Achievement Award, the IEEE (Nanotechnology Council) Nanotechnology Pioneer Award, the Optical Society of America (OSA) Nick Holonyak Award, the TMS John Bardeen Award, the SPIE Technical Achievement Award, and the Quantum Devices Award of the International Symposium on Compound Semiconductors. He has also received the S.S. Attwood Award, the Kennedy Family Research Excellence Award, and the Distinguished Faculty Achievement Award from the University of Michigan. He is a Fellow of the IEEE, the American Physical Society, the Institute of Physics (UK), and the Optical Society of America.
Quantum Dot and Quantum Dash Lasers: The work involves both narrow- and broad-band 1.55µm QD lasers grown by MBE on InP substrates. The growth conditions for quantum dots and dashes and their relation with optical properties are investigated. The focus of the project is on the dynamic properties of the lasers, including small-signal modulation bandwidth, chirp, and α-factor.
InAs Quantum Dot Rolled-Up Microtube Optoelectronic Devices: Strained bi-layers can be released from their parent substrate to form a microcavity. With the insertion of active gain media, such as quantum dots, it is possible to realize microcavity lasers. In addition, we have demonstrated the use of rolled-up microtubes for the realization of directional couplers, phototransceivers and sensors.
Epitaxy of InGaN/GaN Quantum Dot Heterostructures and their Application to Visible Lasers and LEDs: We were the first group to demonstrate visible LEDs and lasers with InGaN/GaN self-organized quantum dots. The QD and device heterostructures are grown by MBE. The objectives of the projects on this subject are to understand QD growth, optimization of their optical properties and to demonstrate visible (green and red-emitting) LEDs with high efficiency and lasers with high output power and low threshold.
GaN-Based Nanowires on Silicon: The nanowires are grown on silicon with or without Ga self-catalyst. They grow with a radial relaxation of strain and are relatively defect free. InGaN/GaN nanowire heterostructures and QDs are used for fundamental studies and for the realization of LEDs, single photon sources and polariton lasers.
Strong Coupling Phenomena and Polariton Lasers: We investigate the properties of exciton-polaritons in a variety of GaAs - and GaN-based microcavities with quantum wells and nanowires. We have demonstrated Bose-Einstein Condensation (BEC) of polaritons at room temperature. We have also demonstrated the first electrically injected polariton laser.
EECS 320. Introduction to Semiconductor Devices
Prerequisite: EECS 215 and PHYSICS 240 or 260. I, II (4 credits)
Introduction to semiconductors in terms of atomic bonding and electron energy bands. Equilibrium statistics of electrons and holes. Carrier dynamics; continuity, drift, and diffusion currents; generation and recombination processes, including important optical processes. Introduction to: PN junctions, metal-semiconductor junctions, light detectors and emitters; bipolar junction transistors, junction and MOSFETs.
EECS 429. Semiconductor Optoelectronic Devices
Prerequisite: EECS 320 or graduate standing. II (4 credits)
Materials for optoelectronics, optical processes in semiconductors, absorption and radiation, transition rates and carrier lifetime. Principles of LEDs, lasers, photodetectors, modulators and solar cells. Optoelectronic integrated circuits. Designs, demonstrations and projects related to optoelectronic device phenomena.
EECS 529. Semiconductor Lasers and LEDs
Prerequisite: EECS 429. I (3 credits)
Optical processes in semiconductors, spontaneous emission, absorption gain, stimulated emission. Principles of light-emitting diodes, including transient effects, spectral and spatial radiation fields. Principles of semiconducting lasers; gain-current relationships, radiation fields, optical confinement and transient effects.
Debashish Basu, "High Temperature Spintronic Devices"
Animesh Banerjee, "InGaN/GaN Quantum Dot Visible Light Emitting Diodes and Lasers Grown by Molecular beam Epitaxy."
Sishir Bhowmick, "Quantum Dot Rolled-Up Microtube and Edge-Emitting Lasers."
Ayan Das, "Strong Coupling and Magnetic Field Effects in Microcavity Light Sources."
Junseok Heo, "Nanoscale Lasers with Optical Microcavities."
Hyun Kum, "Spin Injection, Transport and Modulation in III-V Semiconductors."
Chi-Sen Lee, "High Performance Quantum Dot Laser WDM Arrays for Optical Interconnects."
Meng Zhang, "Properties of InGaN/GaN Quantum Well and Quantum Dot Light Emitting Diodes and Lasers."